Etsuji Ohmura

Analysis of laser ablation process in semiconductor due to ultrashort-pulsed laser with molecular dynamics simulation

Rapid fusion and evaporation phenomena of silicon with ultrafast laser irradiation were simulated using the 3D molecular dynamics. Surface structure dependence of laser shock phenomena, fusion and evaporation process was examined for the Si(100) and Si(111) surface structures. It was shown that the crystal orientation influences the propagation velocity of shock wave and that heat conduction but laser absorption in the materials, that is, absorption coefficient affects the fusion depth when the pulse width is subpicosecond.