Ettore Zaffaroni

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the

Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

4^{mathrm{th}}

Characterisation of the radiation tolerance of HV-CMOS sensors using the Transient Current Technique

generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

1cdot 10^{14}

Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate : arXiv

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