Eugene S. Kadantsev

Quantum interference in exciton-Mn spin interactions in a CdTe semiconductor quantum dot.

We show theoretically and experimentally the existence of a new quantum-interference effect between the electron-hole interactions and the scattering by a single Mn impurity. The theoretical model, including electron-valence-hole correlations, the short- and long-range exchange interaction of a Mn ion with the heavy hole and with electron and anisotropy of the quantum dot, is compared with photoluminescence spectroscopy of CdTe dots with single magnetic ions. We show how the design of the electronic levels of a quantum dot enables the design of an exciton, control of the quantum interference, and hence engineering of light-Mn interaction.

Absolute deformation potentials and robust ab initio model for band shifts induced by (001) biaxial strain in group IIIA-VA semiconductors

A model for the evolution of conduction and valence bands of IIIA-VA (InAs, GaAs, and InP) semiconductors under (001) biaxial strain is developed. The model is based on the ab initio calculations which take into account finite strain dependent relaxation of the reference levels. The results of ab initio full potential calculations of absolute deformation potentials (ADPs) and (001) biaxial strain-modified band edges are reported. It is shown that in type I heterostructures subjected to (001) compressive biaxial strain, the corrections due to nonzero ADP of the core reference levels reduce the strained band offset for holes.

Ab initio calculation of band edges modified by (001) biaxial strain in group IIIA–VA and group IIB–VIA semiconductors: Application to quasiparticle energy levels of strained InAs/InP quantum dot

Results of first-principles full potential calculations of absolute position of valence and conduction energy bands as a function of (001) biaxial strain are reported for group IIIA–VA (InAs, GaAs, InP) and group IIB–VIA (CdTe, ZnTe) semiconductors. Our computational procedure is based on the Kohn–Sham form of density functional theory (KS DFT), local spin density approximation (LSDA), variational treatment of spin-orbital coupling, and augmented plane wave plus local orbitals method (APW+lo). The band energies are evaluated at lattice constants obtained from KS DFT total energy as well as from elastic free energy. The conduction band energies are corrected with a rigid shift to account for the LSDA band gap error. The dependence of band energies on strain is fitted to polynomial of third degree and results are available for parameterization of biaxial strain coupling in empirical tight-binding models of IIIA–VA and IIB–VIA self-assembled quantum dots (SAQDs). The strain effects on the quasiparticle energ...

Scalable routes to single and entangled photon pair sources: tailored InAs/InP quantum dots in photonic crystal microcavities

Optoelectronic devices based on single, self-assembled semiconductor quantum dots are attractive for applications in secure optical communications, quantum computation and sensing. In this paper we show how it is possible to dictate the nucleation site of individual InAs/InP quantum dots using a directed self-assembly process, to control the electronic structure of the nucleated dots and also how to control their coupling to the optical field by locating them within the high field region of a photonic crystal nanocavity. For application within fiber networks, these quantum dots are targeted to emit in the spectral region around 1550 nm.