Eugenia Buzaneva

Ultrathin nanoparticle ZnS and ZnS: Mn films: surface sol-gel synthesis, morphology, photophysical properties

Abstract Ultrathin films of ZnS and Mn-doped ZnS were grown on silicon substrates using surface sol–gel reactions, and the film growth process was characterized by ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy, UV-visible absorbance and photoluminescence (PL) spectroscopy. The Si substrates were pre-treated by chemical oxidation. On the oxidized Si/SiO x surface, nanoparticulate films of ZnS and Mn-doped ZnS were grown by sequential immersion in aqueous metal acetate and sodium sulfide solutions. During the first four adsorption cycles, there was little film growth, but thereafter the amount of material deposited was linear with the number of adsorption cycles. This behavior is consistent with the formation of ZnS nuclei at low coverage, followed by particle growth in subsequent cycles. PL spectra are consistent with incorporation of Mn 2+ into the ZnS nanoparticles.

DNA nanotechnology of carbon nanotube cells: physico-chemical models of self-organization and properties

Abstract We report UV and IR spectroscopic studies of partially unwrapped double helix DNA molecules with carbon nanotubes of “bundles”-type mixtures, which are spontaneously self-assembled into a coupled blocks of DNA molecule that has the chaotic ball structure with carbon nanotube. The shift of the absorption peak from 279.3 to 285.4 nm for the DNA/nanotube layer in comparison with that for DNA layer may be caused by the hydrogen bonds changing under DNA and nanotube interaction. This fact is confirmed by decrease of the wave number of N–H…N, N–H…O groups on 12 cm−1, the absence of C–CH3 group vibration mode at 1440 cm−1 in IR transmittance spectra from DNA/nanotubes layer, indicative of their self-assembled formation. The results of cell investigations: the maximal photoresponse in the ranges of 515–600 and 950–1070 nm is observed at the light excitation of 500–1100 nm, and change of the applied voltage. The models of electronic and photoelectronic processes in heterostructures are developed and experimentally confirmed.

Self-organizing DNA/carbon nanotube molecular films

Abstract We have studied the effects of the electronic structure self-formation and charge transfer for the planar system of layers from DNA unwrapped double helix, DNA double helix, DNA unwrapped double helix with carbon nanotubes (CNT) in the separated sections with common bounds on the silicon substrate—DNA chip on Si. The electronic structure of (DNA/CNT) layer are formed as a result of changes of electron levels in adenine, cytozine, guanine and thymine which were directly revealed by UV, IR spectroscopy. The transport properties of such systems are determined by the charge transfer through the barriers in the DNA double helix/unwrapped double helix and in the DNA unwrapped double helix/CNT heterostructures that were proved by tunneling spectroscopy investigations.

Frontiers of Multifunctional Nanosystems

Preface. Photograph of Participants. Part I. Modeling and Simulation of Nanoparticle and Molecular Nanosystems. Multiscale computer simulations in physics, chemistry and biology: the example of silica J. Horbach, et al. Application of the IMOMM (Integrated Molecular Orbital Molecular Mechanics) method for biopolymers I. Komaromi, L. Muszbek. Molecular orbital simulation of semiconductor and metal clusters V. Gurin. Modeling and interpretation of STM images of carbon nanosystems G.I. Mark, et al. Carbon Nanotubes under internal pressure B.A. Galanov, et al. Part II. Nanotechnology of Nanoparticle and Molecular Nanosystems. Recognition templates for biomaterials with engineered bioreactivity B. Ratner, et al. Layer-by-layer method for immobilization of protein molecules on biochip surface G. Zhavnerko, et al. Enzyme electrodes with enzyme immobilised by sol-gel technique M. Przybyt, M. Bialkowska. Template-directed lattices of nanostructures preparation and physical properties S. Romanov. Templates for metal nanowire self-assembly M. Brust, et al. Layer-by-layer assembly of nanotubes and nanofilms from nanoparticle and polymer blocks for electronic applications N. Kovtyukhova, et al. Non-thermal plasma synthesis of nanocarbons A. Huczko, et al. A novel network structure of organometallic clusters in gas phase A. Nakajima, K. Kaya. Nanotechnology of DNA/nano-Si and DNA/Carbon nanotubes/nano-Si chips E. Buzaneva, et al. Part III. Fundamental Properties of Nanosystems. Fundamental properties and applications of fullerene and carbon nanotube systems P. Scharff. Fundamental properties of DNA: some lessons from studies on the molecular basis of drug binding M. Waring. DNA modifications by novel antitumorplatinum drugs V. Brabec. Studies on protein electron carrier complexes: adrenodoxin reductase-adrenodoxin complex in steroid biosynthesis S. Mardanyan, Y. Sargisova. Interaction of nucleic acids and lipids from tumour cells with anticancer drugs: an SEIRA spectroscopy data G. Dovbeshko, et al. Aggregation of fullerenes in pyridine/water solutions V.L. Aksenov, et al. Infrared spectrum of fullerene C60 aggregates in water solution A.A. Golub, et al. Electrical and magnetic properties of undoped fullerene polymers T. Makarova, B. Sundqvist. Direct transition in the porous nanosilicon measured by electroflectance R.Y. Holiney, et al. Part IV. Single and Assembled Molecules Experiments. Scanning probe microscopy of biomacromolecules: nucleic acids, proteins and their complexes O.I. Kisolyova, et al. Application of atomic force microscopy in protein and DNA biochips development O. Stukalov. Peculiarities of Th. Terrestris spores surface ultrastructure investigated by AFM E.H. Gromozova, et al. Part V. Multifunctional Nanosystems. Relaxation of nanostructured molecular materials under the infuence of solvent vapors Y. Shirshov, et al. Biospecific interactions on the optical transducer surface -- the base of infection diagnostics N. Starodub, et al. Thin film biotermosensors A. Shmyryeva, N. Starodub. Porous silicon as transducer for immune sensors: from theory to practice V. Starodub. A porous silicon microcavity as an optical and electrical multiparametric chemical sensor Z. Gaburro, et al. Composite silicon-based photonic crystals and light emission and sensor elements L. Karachevtseva. Optical transmission of macroporous silicon A. Remenyuk, et al. Magnetoresistive sensors and memory

Frontiers in Nanoscale Science of Micron/Submicron Devices

I. Nanotechnologies.- Submicron Technology.- Ultra Fine Particles and Coatings.- 3-D Patterned III-V Semicondutor Devices Using High Energy In-Situ Focused Ion Beam Lithography and MBE.- Real Time 3-D Patterned Crystal Growth of GaAs Using a Low Energy Focused Ion Beam and Molecular Beam Epitaxy.- Mesoscopic Structure-Formation and Quantum Properties of Heteroepitaxy of InAs/GaAs.- Van der Waals Epitaxy of Transition Metal Dichalcogenides Using Metal Organic Precursors (MOVDWE).- Thin Film Epitaxial Growth by Laser Ablation.- Nanostructuring of Silicon by Laser Direct Writing.- Si(001) Surface Passivation caused by Bi Adsorption.- II. Characterization.- Applications of Scanning Force Microscopy.- An Elliptically Polarized Synchrotron Radiation Beam Line and Its Applications.- The Potential of Electron Spectroscopy and Scanning Tunnelling Microscopy for the Study of Semiconducting Nanostructures.- Optical Characterization of Surfaces at IR and VIS Energies.- Optical Techniques for Probing Semiconductor Surfaces and Interfaces.- Nanoscale Characterization of Interfaces in Micron/Submicron Structures.- III. Fundamental Properties of Micro/Nanostructures.- Electron Interference at III-V Heterointerfaces: Physics and Devices.- Non-Equilibrium Mesoscopic Physics: Microwave-Induced Coherent Transport in Two-Dimensional Semiconductor Microstructures.- Influence of Fluctuations of Widths of Single Quantum Wells on Photoluminescence Properties in Metallo-Organic Compounds of Hydride Epitaxial GaAs / ALxGa1-xAs Heterostructures.- Accurate Modeling of Double Barrier Resonant Tunneling Diodes.- Mechanisms of the Tunnel Current Formation in Double Barrier Resonant Tunneling Structures.- Quantum Well Structures Based on the Layered Compounds InSe and GaSe Grown by Van der Waals Epitaxy.- Frequency Properties of Planer Microwave Detector.- Noise in Silicon Structures with Bicrystallites.- Fundamental Properties and Nanoscale Aspects of Schottky Barriers.- Size Effects in Properties of Metal-Semiconductor Structures with Schottky Barriers.- New Terminations for Planar Schottky Structure (PSS).- Metal (Cr, Mo, W)-GaAs Contacts.- Dislocation Displacement in Silicon Structures.- Effect of Substrate Defects in the Luminescent Properties of Porous Silicon Layers.- On the Kinematics of Amorphization under Ion Implantation.- IV. Basic Physics of Novel Nanostructures.- Lateral Superlattices: Classical, Semi-Classical, and Quantum Mechanical Transport Phenomena.- Transport Studies in Semiconductor Heterostructures.- Equilibrium and Nonequilibrium Optical Effects in Semiconductor Heterostructures.- Observation of Scaling Behavior in a Coulomb Blockade System.- Dynamic Quantum Wells and Quantum Dots in MIS-Microstructure with Periodic Field Electrodes.- Disordered Superlattices.- Si/Ge Superlattices: A Step Towards Si-Based Optoelectronics.- Low Frequency Admittance of Quantized Hall Conductors.- Screening in Two-Dimensional Electron Liquid.- Dielectric Function of Matrix Disperse Systems with Nanoscale Conducting Inclusions Exhibiting Quantum Size Properties.- Photograph.- List of Participants.

Frontiers of multifunctional integrated nanosystems

Preface. Photograph of participants. I: Modeling and computer simulation of characteristics nanosystems. Optical properties of small-radius SWNTs within a tight-binding model V. Popov. The electronic structure of nanotubes and the topological arrangements of carbon atoms I. Lazslo. Irradiation effect on the electron transport properties of single-walled carbon nanotube Yu.I. Prylutskyy, et al. Calculation of the density profile of liquid located in the multi-walled carbon nanotube D.A. Gavryushenko, et al. Small metal clusters: ab initio calculated bare clusters and models within fullerene cages V. Gurin. II: Nanotechnology of building blocks and integrated nanosystems. Nanoparticle reactions on chip M. Kohler, et al. Electrochemical charging of nanocarbons: fullerenes, nanotubes, peapods L. Kavan, L. Dunsch. Nano-encapsulation of fullerene in dendrimers Y. Rio, et al. Irradiation-controlled adsorption and organisation of biomolecules on surfaces: from the nanometric to the mesoscopic level G. Marletta, C. Satriano. Immobilization of protein molecules on solid surface for biosensor applications G. Zhavnerko, et al. Mesoporous aluminosilicates as a host and reactor for preparation of ordered metal nanowires A. Eliseev, et al. III: Single and assembled molecules, nanoparticles on surface and interface investigations. Scanning probe microscopy of biomacromolecules: instrumentation and experiments I. Yaminsky, G. Kiselev. Surface science tools and their application on nanosystems like C60 to indium phosphide J.A. Schaefer, et al. Polarized Raman spectroscopy of single layer and multilayer Ge/Si(001) quantum dot heterostructures A.V. Baranov, et al. IV: Fundamental properties of carbon integrated nanosystems. Nanosystems of polymerized fullerenes and carbon-nanotubes P. Scharff, S. Cui. Synthesis and characterization of C60- and C70 polymer phases L. Carta-Abelmann, et al. The nanospace inside single wall carbon nanotubes H. Kuzmany, et al. Mechanical properties of carbon thin films S. Tamulevicius, et al. V: Fundamental properties of silicon integrated nanosystems. Thin carbon layers on nanostructured silicon: properties and applications Angelescu, et al. ID periodic structures obtained by deep anisotropic etching of silicon E. Astrova, et al. Diode Shottky systems on Al - nanosilicon interface layer - Si G. Vorobets. VI: Multifunctional applications of nanosystems. VI.I. Moletronics. Nano-bio electronic devices based on DNA bases and proteins R. Rinaldi, et al. DNA, DNA/nanocarbon and macrocyclic metal complex/C60 molecular building blocks for nanosystems: charge transport and sensing E. Buzeneva, et al. VI.II. Electronics and photonics. Silicon nanocrystal memory devices A. Nassiopoulou, et al. On the route towards a monolithically integrated silicon photonics N. Daldosso, L. Pavesi. Photoluminescent nanosilicon systems V. Makara. Optical characterization of opal photonic hetero-crystals S. Romanov. VI.III. Spintronics and magneto-optoelectronics. Magnetism in polymerized fullerenes T. Makarova. Application of the electronic properties of carbon nanotubes: computation of the magnetic properties and the 13C NMR shifts

Self formation of Si nanostructured layer at the metal silicide/silicon interface

Abstract The experimental confirmation of the concept of the Si nanocrystallites self-formation in nanostructured Co layer (60 nm)/Si interface at the solid-state reaction between Si and Co with CoSi2 formation is presented. The following evidences have been obtained: (i) the nanostructured CoSi2 layer consists of CoSi2 particles with typical lateral size of 24–100.5 nm, separated by pores in Si, having typical depth of 0.4–6.7 nm and this relief determines the roughness of the interface layer with Si nanocrystallites embedded into CoSi2 matrix; (ii) the transverse optical (TO) phonon modes of Si nanocrystallites lattice are at wave numbers of 464 and 478 cm−1 and the vibration mode of SiSi bond is at 608 cm−1 for Si nanocrystallites of 2.5–4 nm size; (iii) the band gap of Si nanocrystallites equals Eg=1.23, 1.73, 2.74 eV in (Pt–Ir) tip-nanostructured CoSi2 layer/c-Si tunnel structures; (iv) the shape of the interface layer with these Si nanocrystallites stipulates the shape of the conductance (G)–voltage (V) curve with minimum at V=−0.6 V, which is typical for the metal-dielectric-semiconductor (MDS) structure (Si nanocrystallites as a dielectric). These arguments are further supported by our recent sensor characteristics studies on the nanostructured CoSi2 layer/c-Si structures with W probe.

Integration of Si biocomplex building blocks into porous Si for self-organization of multifunctional structures

We developed the nanotechnology of the self-organization of the multifunctional structures from Si biocomplex and nano-Si crystals in por-Si using the integration of Si biocomplex building blocks into por-Si under UV illumination and optical control of self-organization process. Physico-chemical electronic and optical of the nanostructures were detected by AFM, IR spectroscopy. Intense photoluminescence with the maxima at 455 HM (2.73 eV) and 750 HM (1.65 eV), the maximal reflectance at 370 nm, diode properties with/without UV-illumination are characteristic for these structures. Some experimental evidences of bioactivity of these structures have been obtained.

Nanostructured multilayer metal/por-Si structures based on CoSi2 film: optical and electronic properties

Abstract To create nanostructured multilayer Co/por-Si structures based on CoSi2 film with determined size and distribution of the nanocrystals, the interaction between the 6.5-nm Co layer and the por-Si layer surface in vacuum was used. The formation of the self-ordered system based on top layer of CoSi2 nanocrystals, intermediated layer (130–150 nm) contained 3–11 nm Si nanocrystals, and por-Si layer (1.1; 1.2; 1.4 μm) grown on the single crystal Si was experimentally confirmed by TEM, AFM, scanning tunnelling, IR, and UV–VIS spectroscopies. The formed por-CoSi2/por-Si structures have novel optical and electronic properties in comparison with por-Si: the IR bands of maximal absorption (648–1275 cm−1) and maximal reflectance (2000–3200 cm−1); the maximal reflectance (up to 80%) at 800–900 nm, the optical bandgap of Si nanocrystals is Eg=1.2–2.6 eV, and the height of the barrier of CoSi2/nano-Si structures is 0.7–0.95 eV.

The electronic properties for DNA/CNT chip on Si

We have studied the effects of the electronic structure self-formation and charge transfer for the planar system of layers consisting of DNA unwrapped double helix, DNA double helix, DNA unwrapped double helix with carbon nanotubes (CNT) in the separated sections with common boundaries on the silicon substrate—DNA chip on Si. The electronic structure of (DNA/CNT) layer is formed as a result of changes of electron levels in adenine, cytozine, guanine and thymine which were directly revealed by UV, IR spectroscopy. The transport properties of such a system are determined by the charge transfer through the barriers in the DNA double helix/unwrapped double helix and in the DNA unwrapped double helix/CNT heterostructures that was proved by tunneling spectroscopy investigations.