Eun-Pyo Jang

Preparation of a photo-degradation- resistant quantum dot-polymer composite plate for use in the fabrication of a high-stability white-light-emitting diode.

We report on the synthesis of highly fluorescent double-ZnS-shell-capped, yellow-emitting Cu-In-S quantum dots (QDs) with a surprisingly high quantum yield of 92%, the preparation of a free-standing QD-polymethylmethacrylate composite plate, and the application of the QD plate in the fabrication of QD-based white-light-emitting diodes (WLEDs). A free-standing QD plate with QDs embedded uniformly inside a polymeric matrix is used to fabricate a remote-type, resin-free WLED. The QD plate-based WLED displays a high luminous efficiency; however, it suffers from a significantly unstable device performance due to QD degradation upon prolonged photo-excitation. An exceptional operational stability of the QD plate-based WLED is realized by generating hybrid double layers of an organic adhesion layer and a gas barrier layer of sol-gel-derived silica, rendering the QD plate impermeable to oxygen. Our success in achieving a color converter robust against photo-degradation and applying it in the fabrication of a reliable QD-based LED is greatly encouraging as regards the development of next-generation QD-based LED lighting sources.

Unique oxide overcoating of CuInS2/ZnS core/shell quantum dots with ZnGa2O4 for fabrication of white light-emitting diode with improved operational stability

CuInS2 quantum dots (QDs) have been recently highlighted as blue-to-yellow color converters for the demonstration of QD-based white light-emitting diodes (LEDs) owing to their advantageous fluorescent attributes including a broadband yellow emission and exceptional quantum yield. Similar to other types of elaborate core/shell structured QDs, however, core/shell QDs of CuInS2/ZnS are also susceptible to the photo-induced degradation, rendering them inappropriate for the practical application to high operational stability white LED. In this study, CuInS2/ZnS QDs are overcoated with the unprecedented oxide phase of ZnGa2O4 to enhance their photostability, and the resulting CuInS2/ZnS/ZnGa2O4 QDs are characterized with X-ray diffraction and transmission electron microscope. The operational stability test of CuInS2/ZnS/ZnGa2O4 QD-based white LED is performed and compared with that of uncoated CuInS2/ZnS QD-based one, and the efficacy of ZnGa2O4 overlayer is proved in mitigating the photodegradation of QDs and thus improving the device stability.

White Electroluminescent Lighting Device Based on a Single Quantum Dot Emitter

Using a single emitter of Cu-Ga-S/ZnS quantum dots, all-solution-processed white electroluminescent lighting device that not only exhibits the record quantities of 1007 cd m(-2) in luminance and 1.9% in external quantum efficiency but also possesses satisfactorily high color rendering indices of 83-88 is demonstrated.

A near-ideal color rendering white solid-state lighting device copackaged with two color-separated Cu–X–S (X = Ga, In) quantum dot emitters

I–III–VI chalcogenide quantum dots (QDs) are regarded as the most promising downconverters for the fabrication of high-efficiency, high-color rendering solid-state lighting devices, particularly enabled by their exceptional photoluminescence (PL) quantum yields (QYs) along with substantially Stokes-shifted, broad PL characters. In this work, we first synthesize highly efficient green Cu–Ga–S (CGS) and red Cu–In–S (CIS) QDs, having PL QYs of 85 and 83%, respectively, after elaborate ZnS shelling. Then, these two QD emitters that are well color-separated are simply copackaged in a single blue LED chip for the fabrication of tricolored white QD-light-emitting diodes (QD-LEDs). A series of white QD-LEDs with this novel QD combination are prepared by varying the weight ratio of the two QDs loaded. A QD-LED with an optimal weight ratio between CGS and CIS QDs produces a spectrally well-balanced tricolored white electroluminescence, possessing not only near-ideal color rendering index values of 94–97 but high luminous efficacies of 43.1–68.8 lm W−1, depending on the driving current.

Near-complete photoluminescence retention and improved stability of InP quantum dots after silica embedding for their application to on-chip-packaged light-emitting diodes

Silica is the most commonly used oxide encapsulant for passivating fluorescent quantum dots (QDs) against degradable conditions. Such a silica encapsulation has been conventionally implemented via a Stober or reverse microemulsion process, mostly targeting CdSe-based QDs to date. However, both routes encounter a critical issue of considerable loss in photoluminescence (PL) quantum yield (QY) compared to pristine QDs after silica growth. In this work, we explore the embedment of multishelled InP/ZnSeS/ZnS QDs, whose stability is quite inferior to CdSe counterparts, in a silica matrix by means of a tetramethyl orthosilicate-based, waterless, catalyst-free synthesis. It is revealed that the original QY (80%) of QDs is nearly completely retained in the course of the present silica embedding reaction. The resulting QD–silica composites are then placed in degradable conditions such UV irradiation, high temperature/high humidity, and operation of an on-chip-packaged light-emitting diode (LED) to attest to the efficacy of silica passivation on QD stability. Particularly, the promising results with regard to device efficiency and stability of the on-chip-packaged QD-LED firmly suggest the effectiveness of the present silica embedding strategy in not only maximally retaining QY of QDs but effectively passivating QDs, paving the way for the realization of a highly efficient, robust QD-LED platform.