Evgenii E. I. Lipatov

Excess-energy electrons in a nanosecond electron beam from a vacuum diode

The characteristics of an IMA3-150É sealed-off vacuum diode connected to a RADAN-220 nanosecond pulser are investigated. It is found that the electron beam behind the foil contains electrons with an energy exceeding the voltage applied to the diode. It is shown that the elevated-energy electrons appear at the leading edge of a current pulse, the FWHM of the current pulse of these electrons is 200–450 ps, and the pulse amplitude reaches several tens of amperes.

UV and IR laser radiation's interaction with metal film and teflon surfaces

The interaction of Xe (λ ∼ 1.73 μm) and XeCl (0.308 μm) laser radiation with surfaces of metal and TiN-ceramic coatings on glass and steel substrates has been studied. Correlation between parameters of surface erosion versus laser-specific energy was investigated. Monitoring of laser-induced erosion on smooth polished surfaces was performed using optical microscopy. The correlation has been revealed between characteristic zones of thin coatings damaged by irradiation and energy distribution over the laser beam cross section allowing evaluation of defects and adhesion of coatings. The interaction of pulsed periodical CO 2 (λ ∼ 10.6 μm), and Xe (λ ∼ 1.73 μm) laser radiation with surfaces of teflon (polytetrafluoroethylene—PTFE) has been studied. Monitoring of erosion track on surfaces was performed through optical microscopy. It has been shown that at pulsed periodical CO 2 -radiation interaction with teflon the sputtering of polymer with formation of submicron-size particles occurs. Dependencies of particle sizes, form, and sputtering velocity on laser pulse duration and target temperature have been obtained.

Photolysis of water phenol solutions under UV excitation by KrCl laser and KrCl excilamp

Phenol and 4-chlorophenol water solutions photolysis under UV-excitation from KrCl-laser and capacitive discharge KrCl- excilamp are presented. The irradiated solutions have been investigated by spectroscopic methods. The comparison of the KrCl-excilamp and KrCl-laser irradiation effects has been realized for the first time.

Effect of the radiation power density on the sensitivity of a diamond detector

This paper presents the results of an experimental study of the sensitivity of a detector made of natural diamond of the IIa type as a function of the power density of the radiation of a pulsed xenon lamp. It has been shown that the sensitivity of the detector depends on the power density of the xenon lamp radiation and equals about (1–6)·10–4 A/W. A monotonic decrease in sensitivity of the detector during a radiation pulse has been detected. The minimum resistance of the diamond crystal with an irradiated face of area 3 mm2, placed 7 mm away from the axis of the xenon lamp, was ∼300 Ω, which corresponds to a specific conductivity of ∼2.2 Ω–1·m–1.

Modification of thin metal and ceramic films by UV and IR laser radiation

Investigation of the modes of thin metal and ceramic films (0,3-1 μm) removal from the glass and stainless steel substrate by IR and UV laser radiation has been performed. It is presented that the efficient film destruction and removal occurs due to laser induced thermal strength under laser fluxes of ~0.5 J/cm2 not sufficient for phase transformation.

Photoconductive response of type IIa diamond in the 222-353-nm range

Diamond radiation detectors (DRDs) operate on the principle of photoconductive response of the normally insulating, Type IIa diamond when dosed by electromagnetic radiation or high energy particles. As detectors, they offer fast response (~100 ps) and can handle high radiation doses (~1 GGy) without degradation. Diamond also offers significant advantages over semiconducting materials as a compact, bi-polar, high voltage switching medium because of its high dielectric strength and thermal conductivity. However, the wide band-gap of diamond and its normally insulating state impose stringent requirements on the trigger radiation that is used to make the diamond conductive. This paper describes a simple model for conduction in diamond, and compares this model with experimental conductivity as measured in a natural diamond Type IIa radiation detector that was irradiated by laser excitation at various wavelengths from 222-353 nm. The DRD geometry consisted of a 3x1x0.5 mm3 Type IIa diamond with metallization on the 3x0.5mm2 sides. The DRD was exposed to laser light in the orthogonal 3x1 mm2 plane. Agreement with the measured data is achieved by fitting a parameter (defined here as β) at the various irradiation wavelengths. This fitting parameter is itself a function of two physical quantities: α, the absorption coefficient of the diamond and εo, the ionization cost to produce a hole-pair. Using published values of α, we deduce values of εo and compare them with published values for Type IIa diamond in the deep UV to soft x-ray regions. This model also provides a basis for design of high voltage diamond switches that are triggered by near-bandgap (220-250 nm) UV radiation.

Study on the interaction of Xe and XeCl-laser radiation with metals and ceramics

The interaction of Xe- (λ~1.73 µm) and XeCl- (0.308 μm) lasers radiation with surfaces of metal and TiN-ceramic coatings on glass and steel substrates has been studied. Correlation between parameters of surface erosion (area of crater and amount of evaporated material versus laser focus position and number of pulses) was investigated. Monitoring of laser induced erosion on smooth polished surfaces was performed using optical microscopy. The correlation has been revealed between characteristic zones of thin coatings damaged by irradiation and energy distribution over laser beam cross section allowing evaluation of defects and adhesion of coatings.