Ewa Mlynczak

Realization of a vertical topological p-n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures.

Three-dimensional (3D) topological insulators are a new state of quantum matter, which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p–n junction made of a heterostructure of two different binary 3D TI materials Bi2Te3 and Sb2Te3 epitaxially grown on Si(111). We demonstrate that the chemical potential is tunable by about 200 meV when decreasing the upper Sb2Te3 layer thickness from 25 to 6 quintuple layers without applying any external bias. These results make it realistic to observe the topological exciton condensate and pave the way for exploring other exotic quantum phenomena in the near future.

Epitaxial MgO/Fe(001) and Fe/MgO(001): Structures of the interfaces

The chemical, electronic and magnetic structures of the interfaces between Fe(001) and MgO(001) thin films were studied using conversion electron Mossbauer spectroscopy (CEMS). A 1 ML thick 57Fe probe located at either of the interfaces in the MgO/56Fe/MgO epitaxial structure enabled precise measurements of the interfacial hyperfine interactions. Analysis of the CEMS spectra showed that both the “MgO/Fe” and “Fe/MgO” interfaces are partially oxidized (63% and 86%, respectively), although, despite good crystallinity, no well-defined iron oxide phases were detected. At the “MgO/Fe” interface, 14% of the oxidized Fe sites were found to be defective (located at steps, corners or kinks). The “Fe/MgO” interface, from which the formation of 57Fe islands of at least 3 ML in height was inferred, was found to be almost defect-free. No modification of the hyperfine parameters of Fe atoms located away from the interface was detected for “Fe/MgO,” in contrast with the “MgO/Fe” interface. Approximately 6% of the probe ...

Direct Observation of the Band Gap Transition in Atomically Thin ReS2

ReS2 is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of this van der Waals compound leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic structure of monolayer, bilayer, and bulk ReS2 using k-space photoemission microscopy in combination with first-principles calculations. We demonstrate that the valence electrons in bulk ReS2 are-contrary to assumptions in recent literature-significantly delocalized across the van der Waals gap. Furthermore, we directly observe the evolution of the valence band dispersion as a function of the number of layers, revealing the transition from an indirect band gap in bulk ReS2 to a direct gap in the bilayer and the monolayer. We also find a significantly increased effective hole mass in single-layer crystals. Our results establish bilayer ReS2 as an advantageous building block for two-dimensional devices and van der Waals heterostructures.

NiO/Fe(001): Magnetic anisotropy, exchange bias, and interface structure

The magnetic and structural properties of NiO/Fe epitaxial bilayers grown on MgO(001) were studied using magnetooptic Kerr effect (MOKE) and conversion electron Mossbauer spectroscopy (CEMS). The bilayers were prepared under ultra high vacuum conditions using molecular beam epitaxy with oblique deposition. Two systems were compared: one showing the exchange bias (100ML-NiO/24ML-Fe), ML stands for a monolayer, and another where the exchange bias was not observed (50ML-NiO/50ML-Fe). For both, the magnetic anisotropy was found to be complex, yet dominated by the growth-induced uniaxial anisotropy. The training effect was observed for the 100ML-NiO/24ML-Fe system and quantitatively described using the spin glass model. The composition and magnetic state of the interfacial Fe layers were studied using 57Fe-CEMS. An iron oxide phase (Fe3+4Fe2+1O7), as thick as 31 A, was identified at the NiO/Fe interface in the as-deposited samples. The ferrimagnetic nature of the interfacial iron oxide film explains the comple...

Bi1Te1 is a dual topological insulator

Markus Eschbach, ∗ Martin Lanius, ∗ Chengwang Niu, ∗ Ewa M lyńczak, 2 Pika Gospodarič, Jens Kellner, Peter Schüffelgen, Mathias Gehlmann, Sven Döring, Elmar Neumann, Martina Luysberg, Gregor Mussler, Lukasz Plucinski, † Markus Morgenstern, Detlev Grützmacher, Gustav Bihlmayer, Stefan Blügel, and Claus M. Schneider Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland II. Institute of Physics B and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany Peter Grünberg Institute and Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany (Dated: May 2, 2016)New three-dimensional (3D) topological phases can emerge in superlattices containing constituents of known two-dimensional topologies. Here we demonstrate that stoichiometric Bi1Te1, which is a natural superlattice of alternating two Bi2Te3 quintuple layers and one Bi bilayer, is a dual 3D topological insulator where a weak topological insulator phase and topological crystalline insulator phase appear simultaneously. By density functional theory, we find indices (0;001) and a non-zero mirror Chern number. We have synthesized Bi1Te1 by molecular beam epitaxy and found evidence for its topological crystalline and weak topological character by spin- and angle-resolved photoemission spectroscopy. The dual topology opens the possibility to gap the differently protected metallic surface states on different surfaces independently by breaking the respective symmetries, for example, by magnetic field on one surface and by strain on another surface.

Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS2 bulk crystals.

Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization, as long as it is probed locally in real and in reciprocal space. In this article we present the first observation of this type of compensated polarization in MoS2 bulk crystals. Using spin- and angle-resolved photoemission spectroscopy (ARPES), we directly observed a spin-polarization of more than 65% for distinct valleys in the electronic band structure. By additionally evaluating the probing depth of our method, we find that these valence band states at the point in the Brillouin zone are close to fully polarized for the individual atomic trilayers of MoS2, which is confirmed by our density functional theory calculations. Furthermore, we show that this spin-layer locking leads to the observation of highly spin-polarized bands in ARPES since these states are almost completely confined within two dimensions. Our findings prove that these highly desired properties of MoS2 can be accessed without thinning it down to the monolayer limit.

Tuning the Dirac point to the Fermi level in the ternary topological insulator (Bi1−xSbx)2Te3

In order to stabilize Majorana excitations within vortices of proximity induced topological superconductors, it is mandatory that the Dirac point matches the Fermi level rather exactly, such that the conventionally confined states within the vortex are well separated from the Majorana-type excitation. Here, we show by angle resolved photoelectron spectroscopy that (Bi1−xSbx)2Te3 thin films with x = 0.94 prepared by molecular beam epitaxy and transferred in ultrahigh vacuum from the molecular beam epitaxy system to the photoemission setup match this condition. The Dirac point is within 10 meV around the Fermi level, and we do not observe any bulk bands intersecting the Fermi level.

Antiferromagnetic interlayer exchange coupling in epitaxial Fe/MgO/Fe trilayers with MgO barriers as thin as single monolayers

Comparative studies of the magnetic properties of epitaxial Fe/MgO/Fe trilayers, which were directly grown on an MgO(001) crystal and a homoepitaxial MgO buffer layer, were performed to examine the interlayer exchange coupling as a function of the MgO spacer thickness. Measurements of the magneto-optic Kerr effect at room temperature demonstrated that there was a strong antiferromagnetic coupling (AFC) between the Fe layers, which was mediated by the insulating MgO barrier. A measurable AFC was found in a range of MgO thickness (dMgO) from a single monolayer (2 A) to 6 A, which had a maximum strength of −1.15 ergs/cm2 at dMgO = 2.7 A for the Fe/MgO/Fe trilayers that were prepared on the buffered sample and was notably weaker for the trilayers that were prepared directly on the MgO(001).

Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.The knowledge of the electronic structure of composite material is essential for tailoring their properties. The authors introduce a method based on standing wave angle-resolved hard X-ray photoemission to determine the element- and momentum-resolved electronic band structure simultaneously.

Tuning the Dirac point to the Fermi level in the ternary topological insulator (Bi

In order to stabilize Majorana excitations within vortices of proximity induced topological superconductors, it is mandatory that the Dirac point matches the Fermi level rather exactly, such that the conventionally confined states within the vortex are well separated from the Majorana-type excitation. Here, we show by angle resolved photoelectron spectroscopy that (Bi1−xSbx)2Te3 thin films with x = 0.94 prepared by molecular beam epitaxy and transferred in ultrahigh vacuum from the molecular beam epitaxy system to the photoemission setup match this condition. The Dirac point is within 10 meV around the Fermi level, and we do not observe any bulk bands intersecting the Fermi level.