F.A. Kish

High-brightness AlGaInN light-emitting diodes

Currently, commercial LEDs based on AlGaInN emit light efficiently from the ultraviolet-blue to the green portion of the visible wavelength spectrum. Data are presented on AlGaInN LEDs grown by organometallic vapor phase epitaxy (OMVPE). Designs for high-power AlGaInN LEDs are presented along with their performance in terms of output power and efficiency. Finally, present and potential applications for high-power AlGaInN LEDs, including traffic signals and contour lighting, are discussed.

InP-based photonic integrated circuits: Technology and manufacturing

Large-scale InP-based photonic integrated circuits were first introduced in 2004, representing over an order-of-magnitude increase in integration complexity for commercial InP devices. In this talk we will review recent developments and manufacturing of these novel components.

High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P light-emitting diodes

High power light emitting diodes (LEDs) are of interest for many lighting applications. Flux improvements can be achieved by scaling conventional chips to larger dimensions. However this scaling results in a decrease in extraction efficiency. These penalties can be offset by modifying the chip geometry such that the number of internal reflections is reduced, thereby increasing the probability of photon escape. LEDs with a truncated-inverted-pyramid (TIP) geometry have been fabricated and packaged. Peak efficiencies exceeding 100 lm/W have been measured (100 mA dc, 300 K) for orange ((lambda) p approximately 610 m) devices. In the red wavelength regime ((lambda) p approximately 650 nm), peak external quantum efficiencies of 55% (100 mA dc, 300 K) have been achieved. Flux exceeding 65 lumens from a single 594 nm device has also been demonstrated. These characteristics match and/or exceed the performance of many conventional lighting sources.

Ultra High Capacity WDM Photonic Integrated Circuits

Design and performance of large scale, dense wavelength division multiplexed InP transmitter and receiver photonic integrated circuits (PICs) are reviewed. The PICs are capable of transmitting and receiving up to 40 wavelengths at data rates up to 40 Gbit/s per channel.

Large Scale InP Photonic Integrated Circuits for High Speed Optical Transport

Radhakrishnan Nagarajan, Masaki Kato, Vince Dominic, Jacco Pleumeekers, Andrew Dentai, Peter Evans, Sheila Hurtt, Johan Bäck, Damien Lambert, Mark Missey, Atul Mathur, Sanjeev Murthy, Randal Salvatore, Charles Joyner, Richard Schneider, Mehrdad Ziari, Jeffrey Bostak, Mike Kauffman, Huan-Shang Tsai, Michael Van Leeuwen, Alan Nilsson, Robert Taylor, Stephen Grubb, David Mehuys, Fred Kish and David Welch Infinera, 1322 Bordeaux Drive, Sunnyvale, CA 94089 rnagarajan@infinera.com

400 Gb/s (10-channel /spl times/ 40 Gb/s) DWDM photonic integrated circuits

A 10-channel transmitter and receiver DWDM photonic integrated circuit pair is demonstrated that is capable of transmitting and receiving data at 40 Gb/s per channel for an aggregate data communication rate of 400 Gb/s.