F. Cadiz

Exciton radiative lifetime in transition metal dichalcogenide monolayers

We have investigated the exciton dynamics in transition metal dichalcogenide monolayers using time-resolved photoluminescence experiments performed with optimized time resolution. For

Excitonic Linewidth Approaching the Homogeneous Limit in MoS2 -Based van der Waals Heterostructures

\mathrm{MoS}{\mathrm{e}}_{2}

Enabling valley selective exciton scattering in monolayer WSe2 through upconversion.

monolayer, we measure

Charged excitons in monolayer WSe2: Experiment and theory

{\ensuremath{\tau}}_{\mathrm{rad}}^{0}=1.8\ifmmode\pm\else\textpm\fi{}0.2\phantom{\rule{0.16em}{0ex}}\mathrm{ps}

In-Plane Propagation of Light in Transition Metal Dichalcogenide Monolayers: Optical Selection Rules

at

Ultra-low power threshold for laser induced changes in optical properties of 2D molybdenum dichalcogenides

T=7\phantom{\rule{0.16em}{0ex}}\mathrm{K}

Well separated trion and neutral excitons on superacid treated MoS2 monolayers

that we interpret as the intrinsic radiative recombination time. Similar values are found for

Excitonic properties of semiconducting monolayer and bilayer MoTe2

\mathrm{WS}{\mathrm{e}}_{2}

Surface recombination in doped semiconductors: Effect of light excitation power and of surface passivation

monolayers. Our detailed analysis suggests the following scenario: at low temperature

Imaging ambipolar diffusion of photocarriers in GaAs thin films

(T\ensuremath{\lesssim}50\phantom{\rule{0.16em}{0ex}}\mathrm{K})