F. Demangeot

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified through the properties of GaN/ AlInN multiple quantum wells ( QWs) suitable for near- infrared intersubband applications. A built- in electric field of 3.64MVcm(-1) solely due to spontaneous polarization is deduced from photoluminescence measurements carried out on strain- free single QW heterostructures, a value in good agreement with that deduced from theoretical calculation. Other potentialities regarding optoelectronics are demonstrated through the successful realization of crack- free highly reflective AlInN/ GaN distributed Bragg reflectors ( R > 99%) and high quality factor microcavities ( Q > 2800) likely to be of high interest for short wavelength vertical light emitting devices and fundamental studies on the strong coupling regime between excitons and cavity photons. In this respect, room temperature ( RT) lasing of a LM AlInN/ GaN vertical cavity surface emitting laser under optical pumping is reported. A description of the selective lateral oxidation of AlInN layers for current confinement in nitride- based light emitting devices and the selective chemical etching of oxidized AlInN layers is also given. Finally, the characterization of LM AlInN/ GaN heterojunctions will reveal the potential of such a system for the fabrication of high electron mobility transistors through the report of a high two- dimensional electron gas sheet carrier density ( n(s) similar to 2.6 x 10(13) cm(-2)) combined with a RT mobility mu(e) similar to 1170 cm(2) V-1 s(-1) and a low sheet resistance, R similar to 210 Omega square.

Raman determination of phonon deformation potentials in α-GaN

Abstract The effect of the built-in biaxial stress on the E2 and A1 (LO) q = 0 phonon modes of wurtzite GaN layers deposited by Metal Organic Vapor Phase Epitaxy on (0 0 0 1) direction on sapphire substrates is studied by Raman spectroscopy. Shifts in phonon frequencies are measured, which we correlate to the residual strain fields in the epilayers. Using stress calibration measurements taken from reflectance data, the biaxial pressure coefficients of mode frequencies are determined and used to calculate the corresponding deformation potentials.

Interplay of electrons and phonons in heavily doped GaN epilayers

Raman spectroscopy is used to analyze the effect of electrons on the lattice dynamics of unintentionally heavily doped GaN. The deposition temperature of GaN buffer layers on sapphire substrates is found to have an important influence on the presence of free carriers in GaN layers, evidenced by plasmon coupling to the A1(LO) phonon. Data from infrared measurements are used to calculate the Raman line shape of q=0 coupled A1(LO)-plasmon modes in a dielectric approach and give a good fit of the L−(q=0) component observed in Raman spectra. In particular, the fitting procedure applied to spatially resolved micro-Raman measurements reveals an inhomogeneous concentration of electrons on the scale of hexagonal microcrystallites. Partial screening of phonons with wave vectors differing from the q=0 transfer of incident and scattered photons is invoked to explain LO-like scattering over the whole spectral range of optical phonons, attributed to charge density fluctuations on account of its polarization properties.

Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia

Ammonia is used for growing undoped GaN layers by gas source molecular-beam epitaxy on c-plane sapphire substrates. The growth mode is layer by layer as shown by the observation of reflection high-energy electron diffraction intensity oscillations. The structural quality is studied by x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Low-temperature photoluminescence (PL) and reflectivity demonstrate intrinsic excitonic emission. Room-temperature PL exhibits a strong band-edge intensity and a weak deep-level emission, the so-called yellow band. Finally, secondary ion mass spectroscopy is carried out to check the residual impurity levels of Si, C, and O.

GaN nanoindentation: A micro-Raman spectroscopy study of local strain fields

We have investigated strain fields around GaN nanoindentations. Stress relaxation around the edges of the nanoindentation was evident in atomic force microscopy images. More detailed information on the strain fields was obtained from Raman scattering, which has been used to analyze the shape of the strain field around the indentation. We find that the Berkovich tip giving a triangular imprint on the sample generates a strain field, which represents a hexagonal pattern. Negative values of the strain indicate that the residual stress is compressive. Strain is larger in the center of the indentation than outside. Analysis of the ratio of the frequency shift of the E2 and A1(LO) modes suggests that the residual strains are close to biaxial state outside the indentation contact zone, and mostly hydrostatic within the indentation center.

Experimental study of LO phonons and excitons in ZnO nanoparticles produced by room-temperature organometallic synthesis

We report here the study by optical microspectroscopy of crystalline ZnO nanoparticles produced by room-temperature organometallic synthesis. We present resonant Raman scattering spectrum obtained from different sized nanostructures from which the longitudinal-optical (LO) phonon frequency has been found to be very weakly dependent on their size. Low-temperature photoluminescence measurements reveal that (i) the band-edge PL of ZnO nanoparticles is dominated by weakly bound localized exciton, and that (ii) its energy does not exhibit any spatial confinement effect. These results enlighten the need for surface passivation of the nanoparticles to improve their UV emission potential.

Phonons in a strained hexagonal GaN–AlN superlattice

A GaN (6.3 nm)-AlN (5.1 nm) superlattice, grown by molecular beam epitaxy on a sapphire substrate and an AlN buffer layer, has been studied by means of micro-Raman spectroscopy. Most of the observed features have been identified and assigned to optical phonons of the superlattice layers. The average biaxial strain in GaN layers has been deduced from the detailed analysis of the frequency shift observed on the phonon lines. Additional measurements on the bevelled sample clearly suggest the significant increase of this strain for decreasing distances from the interface with the buffer layer.

Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1−xAlxN solid solutions

Long-wavelength optical phonons of Ga1−xAlxN solid solutions have been identified in a wide compositional range by Raman spectroscopy. The A1 and E1 polar phonon frequencies evolve continuously with x from one-member crystal to the other. The same behavior seems to hold true for the silent B1 mode, which manifests itself by an interference with an unidentified continuum. Coupling of the longitudinal-optic (LO) modes associated with the two types of bonds, via the macroscopic electric field, is treated by a generalization of the dielectric model [D. T. Hon and W. L. Faust, J. Appl. Phys. 1, 241 (1973)]. This approach accounts for the observed frequencies and supports the apparent one-mode behavior of the polar LO phonons.

Raman study of E2 and surface phonon in zinc oxide nanoparticles surrounded by organic molecules

Using Raman spectrometry, we obtained results showing the influence of organic ligands on the vibrational properties of small zinc oxide nanocrystals (2.1–6.8nm). It is shown that it is possible to distinguish both mechanical and dielectric effects from the E2 nonpolar phonon mode and from a surface mode, theoretically predicted but rarely observed. It has been found that E2 phonon is not dependent on the nanocrystal size, but its frequency decreases with increasing ligand length, characteristic of a tensile stress on the nanocrystal. We report also the observation of a surface optical mode, the experimental frequency of which is in reasonable agreement with available calculations.

Angular dispersion of polar phonons in a hexagonal GaN-AlN superlattice

Abstract Raman spectra of a wurtzite GaN (6.3 nm)–AlN (5.1 nm) superlattice have been recorded under visible excitation. When the orientation of the phonon wavevector is varied, the angular dispersion of polar phonons from the superlattice is clearly evidenced. These experimental data are found to be in good agreement with the results of a previous calculation based on a dielectric continuum model, taking into account the strain of the two types of layers, which predicts dispersive interface and quasi-confined modes.