F. Nguyen Van Dau

Magnetic and transport properties of Fe/Cr superlattices (invited)

We describe the magnetic and transport properties of Fe(001)/Cr(001) superlattices grown on GaAs (001) by molecular‐beam epitaxy and characterized by reflection high‐energy electron diffraction (RHEED), Auger spectroscopy, x‐ray diffraction, and electron microscopy. For Cr layers thinner than about 30 A the magnetic behavior reveals strong antiferromagnetic couplings between the Fe layers across the Cr layers. Polarized neutron diffraction experiments confirm the existence of an antiferromagnetic superstructure. We discuss the origin of the antiferromagnetic (AF) coupling. The Fe/Cr superlattices with AF interlayer coupling exhibit a giant magnetoresistance: when an applied field aligns the magnetizations of the Fe layers, the resistivity drops by a factor of 2 for some samples. This giant magnetoresistance can be ascribed to the spin dependence of the electron scattering by interfaces. We compare our results with the predictions of two recent theoretical models.

Electrical Detection of Spin Accumulation in a p -Type GaAs Quantum Well

We report on experiments in which a spin-polarized current is injected from a GaMnAs ferromagnetic electrode into a GaAs layer through an AlAs barrier. The resulting spin polarization in GaAs is detected by measuring how the tunneling current, to a second GaMnAs ferromagnetic electrode, depends on the orientation of its magnetization. Our results can be accounted for by sequential tunneling with the nonrelaxed spin splitting of the chemical potential, that is, spin accumulation, in GaAs. We discuss the conditions on the hole spin relaxation time in GaAs that are required to obtain the large effects we observe.

Enhanced tunnel magnetoresistance at high bias voltage in double-barrier planar junctions

Single Co/Al2O3/NiFe and double Co/Al2O3/Co/Al2O3/NiFe planar tunnel junctions were grown by sputtering and subsequently patterned in a four-step process using optical lithography. The Al2O3 barriers are formed by radio frequency plasma oxidation of 1.5 nm aluminum layers. The double junctions exhibit three clear resistance levels depending on the relative configuration of the magnetizations. Both single and double junctions exhibit maximum magnetoresistance (MR) ratios above 10% at room temperature and 20% at 30 K and a decrease of MR with increasing bias voltage. With regard to its low bias value, the MR is reduced by a factor of 2 at 0.26 V for the single junctions and at values above 0.8 V for the double junctions. The decay of the MR of double junctions with bias voltage is significantly slower than expected from two independent junctions in series.

Low‐field magnetic sensors based on the planar Hall effect

Sensitive magnetic field detection devices have been fabricated based on the planar Hall effect. The active material consists of permalloy ultrathin films (6 nm thick) epitaxially grown by molecular beam epitaxy. Uniaxial magnetic anisotropy is induced in the film through ferromagnetic coupling with a Fe/Pd bilayer epitaxially grown on MgO(001). The active layer shows a magnetoresistive ratio ΔR/R=2%. The device gives a sensitivity of 100 V/TA and a minimum detectable field below 10 nT. The detector response is linear over at least four decades. The transverse resistivity is sensitive only to the anisotropic resistivity, and not to the isotropic resistivity term which is highly temperature sensitive. Consequently, the thermal noise at 1 Hz is reduced by four orders of magnitude compared to a similar longitudinal magnetoresistive detector.

Linear and quadratic magneto-optical measurements of the spin reorientation in epitaxial Fe films on MgO

Abstract We have undertaken a detailed study by magneto-optical techniques of in-plane magnetization reversal behaviour in epitaxial Fe films grown by MBE on (10 0) oriented MgO substrate. We measure MH loops for both orthogonal in-plane magnetization components Mt (component parallel to the magnetic field) and Mt (component perpendicular to the field) and for various orientations of the magnetic field with respect to the crystalline axis. These measurements show the classical four-fold cubic anisotropy for large Fe film thickness and confirm the appearance of weak uniaxial in-plane anisotropy superimposed for thinner films ( t = 20 A ). We have demonstrated the appearance of strong asymmetrical hysteresis loop for p-polarized incident light. We explain this behaviour as the mixing of transverse magnetization contribution to the longitudinal magnetization measurements on the basis of quadratic magneto-optical effects. The calculation of these effects based on eigenmode propagation in anisotropic layered media are developed by including the second-order magneto-optical terms in the permittivity tensor characteristic of a cubic crystal. The second-order reflection coefficients are discussed in the case of the normal incidence of the laser beam and for the magnetic field along the hard axis of the Fe film.

Field sensing using the magnetoresistance of IrMn exchange-biased tunnel junctions

An original concept of high sensitivity magnetic field sensor using the spin-dependent tunneling effect has been investigated. The required crossed-biased configuration is obtained by combining both shape energy originating from vicinal step bunched Si substrates and unidirectional exchange anisotropy supplied by an Ir20Mn80 film in the “top-biased” geometry. We demonstrate a linear and reversible signal at room temperature and above. The smooth loss of sensitivity at higher temperature is shown to be correlated to the thermal dependence of the exchange bias property when IrMn is deposited above the insulating Al2O3 barrier.An original concept of high sensitivity magnetic field sensor using the spin-dependent tunneling effect has been investigated. The required crossed-biased configuration is obtained by combining both shape energy originating from vicinal step bunched Si substrates and unidirectional exchange anisotropy supplied by an Ir20Mn80 film in the “top-biased” geometry. We demonstrate a linear and reversible signal at room temperature and above. The smooth loss of sensitivity at higher temperature is shown to be correlated to the thermal dependence of the exchange bias property when IrMn is deposited above the insulating Al2O3 barrier.

Magnetic sensors for nanotesla detection using planar Hall effect

Abstract We have fabricated sensitive magnetic sensors based on the planar Hall effect with a field resolution below 10 nT. The sensor response is linear over at least four decades. Due to the transverse measurement configuration, the noise associated with thermal drift at 1 Hz is reduced by four orders of magnitude compared to a similar longitudinal magnetoresistive sensor. The active material consists of permalloy ultrathin films (60 A thick) on top of a Fe/Pd bilayer epitaxially grown on MgO (001) by molecular beam epitaxy. A process-induced uniaxial magnetic anisotropy is built into the Fe/Pd bilayer, which then ensures that the magnetization at zero field is aligned with the current regardless of the magnetic history of the device. Optimized devices exhibit a sensitivity of 100 V T −1 A −1 . In order to shift the range of operation towards lower fields, it is shown that a process-induced uniaxial anisotropy can be built into FeNi layers grown on Si(100) substrates. Planar Hall-effect sensors fabricated with such material exhibit sensitivities up to 300 V T −1 A −1 .

Domain structures during magnetization reversal in exchange-biased layers

The magnetization reversal of an exchange-biased Co/NiO layer is studied with the help of magneto-optical microscopy, as a function of the angle between the applied magnetic field and the biasing direction. Based on domain patterns, a model of the magnetization reversal in these layers is presented. The drastic changes in the domain patterns indicate different domain nucleation conditions for different directions of the effective field.

Magnetic domain wall motion by spin transfer

Abstract The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied external field. Spin transfer can be used to induce magnetization reversals and oscillations, or to control the position of a magnetic domain wall. In this review, we focus on this last mechanism, which is today the subject of an extensive research, both because the microscopic details for its origin are still debated, but also because promising applications are at stake for non-volatile magnetic memories.

Contribution of current perpendicular to the plane to the giant magnetoresistance of laterally modulated spin values

Giant magnetoresistance (GMR) effects up to 10% have been observed in Co/Cu/FeNi spin valve structures grown onto step bunched vicinal Si(111) substrates misoriented towards [11-2]. The step bunching is activated using a simple thermal treatment which leads to surfaces where terraces alternate with facets at the nanometer scale. GMR of the spin valve structures is investigated with the current applied parallel or perpendicular to the steps. An in-plane uniaxial magnetic anisotropy is induced in each magnetic layer with the easy axis parallel to the steps. This results in square GMR behavior when the field is applied along the easy axis. Specific features observed when the field is applied along the hard axis are also shown to be the consequence of this anisotropy. When the initial misorientation angle of the substrate becomes higher than 4°, we observe an enhancement of the room-temperature GMR when the current is applied perpendicular to the steps. The origin of this enhancement is discussed based on the...