Fabian Rotermund

Efficient Mode-Locking of Sub-70-fs Ti:Sapphire Laser by Graphene Saturable Absorber

The efficient passive mode-locking of a Ti:sapphire laser with a monolayer graphene saturable absorber is demonstrated for the first time. High-quality and large-area (1 in.) monolayer graphene, synthesized by chemical vapor deposition, exhibits ultrafast recovery times and excellent nonlinear absorption behavior for bulk solid-state laser mode-locking near 800 nm. The continuous-wave mode-locked Ti:sapphire laser generates 63-fs pulses with output powers up to 480 mW under stable operation at 99.4 MHz.

Graphene mode-locked femtosecond Cr:ZnSe laser at 2500 nm

We report, for the first time to our knowledge, femtosecond pulse generation from a graphene mode-locked Cr:ZnSe laser at 2500 nm. To minimize the insertion losses at the lasing wavelength, high-quality monolayer graphene transferred on a CaF(2) substrate was used in the experiments. Once mode-locking was initiated, the laser generated a stable train of 226 fs pulses with a time-bandwidth product of 0.39. The mode-locked laser operated at a pulse repetition rate of 77 MHz and produced 80 mW output power with an incident pump power of 1.6 W. To our knowledge, this is the longest laser wavelength at which graphene-based passive mode-locking has been demonstrated to date.

Passive mode-locking of a Tm-doped bulk laser near 2 µm using a carbon nanotube saturable absorber

Stable and self-starting mode-locking of a Tm:KLu(WO(4))(2) crystal laser is demonstrated using a transmission-type single-walled carbon nanotube (SWCNT) based saturable absorber (SA). These experiments in the 2 microm regime utilize the E11 transition of the SWCNTs for nonlinear saturable absorption. The recovery time of the SWCNT-SA is measured by pump-probe measurements as approximately 1.2 ps. The mode-locked laser delivers approximately 10 ps pulses near 1.95 microm with a maximum output power of up to 240 mW at 126 MHz repetition rate.

High-quality, large-area monolayer graphene for efficient bulk laser mode-locking near 1.25 μm

High-quality monolayer graphene as large as 1.2×1.2 cm2 was synthesized by chemical vapor deposition and used as a transmitting saturable absorber for efficient passive mode-locking of a femtosecond bulk solid-state laser. The monolayer graphene mode-locked Cr:forsterite laser was tunable around 1.25 μm and delivered sub-100 fs pulses with output powers up to 230 mW. The nonlinear optical characteristics of the monolayer graphene saturable absorber and the mode-locked operation were then compared with the case of the bilayer graphene saturable absorber.

Fabrication and characterization of ultrafast carbon nanotube saturable absorbers for solid-state laser mode locking near 1μm

Transmitting and reflecting ultrafast saturable absorbers based on single-walled carbon nanotubes are developed that are applicable for stable mode locking of bulk solid-state lasers operating near 1μm. For fabrication of these saturable absorbers, relatively simple spin coating and spray methods are employed. Parameters important for stable mode locking, such as transient nonlinear absorption, saturation fluence, and recovery time, are investigated by nonlinear transmission and time-resolved pump-probe measurements near 1μm. Typical modulation depths and recovery times amount to ∼0.21%–0.25% and <1ps, respectively.

LiInSe2: A biaxial ternary chalcogenide crystal for nonlinear optical applications in the midinfrared

Single crystals of lithium selenoindate (LiInSe2) are grown by the Bridgman–Stockbarger technique up to sizes of 10 mm in diameter and 20 mm in length. The different phases have color from yellow (as grown) to dark red (after annealing) but all have the same wurtzite type structure mm2 with slightly differing cell parameters. The band gap for the yellow phase at 300 K is at 2.86–2.87 eV. The red color is attributed to point defects and can be removed by proper illumination. Sellmeier equations are constructed for the 0.5–11 μm range and their validity is checked with second harmonic generation which provides first estimations of the nonlinear coefficients of LiInSe2. The potential of LiInSe2 is compared to that of the widely spread and technologically mature AgGaS2.

Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film

We demonstrate ultrafast all-optical control of terahertz (THz) radiation through nanoresonators, slot antennas with a hundred micron length but submicron width in thin gold layers, fabricated on vanadium dioxide (VO2) thin films. Our THz nanoresonators show almost perfect transmission at resonance. By virtue of phase transition of VO2 from insulating to metallic state, induced in subpicosecond time scale by moderate optical pump, ultrafast control of THz transmission is enabled. This is compared to bare VO2 films where no switching dynamics are observed under similar conditions.

Active control of all-fibre graphene devices with electrical gating

Active manipulation of light in optical fibres has been extensively studied with great interest because of its compatibility with diverse fibre-optic systems. While graphene exhibits a strong electro-optic effect originating from its gapless Dirac-fermionic band structure, electric control of all-fibre graphene devices remains still highly challenging. Here we report electrically manipulable in-line graphene devices by integrating graphene-based field effect transistors on a side-polished fibre. Ion liquid used in the present work critically acts both as an efficient gating medium with wide electrochemical windows and transparent over-cladding facilitating light–matter interaction. Combined study of unique features in gate-variable electrical transport and optical transition at monolayer and randomly stacked multilayer graphene reveals that the device exhibits significant optical transmission change (>90%) with high efficiency-loss figure of merit. This subsequently modifies nonlinear saturable absorption characteristics of the device, enabling electrically tunable fibre laser at various operational regimes. The proposed device will open promising way for actively controlled optoelectronic and nonlinear photonic devices in all-fibre platform with greatly enhanced graphene–light interaction.

High-power Broadband Organic THz Generator

The high-power broadband terahertz (THz) generator is an essential tool for a wide range of THz applications. Here, we present a novel highly efficient electro-optic quinolinium single crystal for THz wave generation. For obtaining intense and broadband THz waves by optical-to-THz frequency conversion, a quinolinium crystal was developed to fulfill all the requirements, which are in general extremely difficult to maintain simultaneously in a single medium, such as a large macroscopic electro-optic response and excellent crystal characteristics including a large crystal size with desired facets, good environmental stability, high optical quality, wide transparency range, and controllable crystal thickness. Compared to the benchmark inorganic and organic crystals, the new quinolinium crystal possesses excellent crystal properties and THz generation characteristics with broader THz spectral coverage and higher THz conversion efficiency at the technologically important pump wavelength of 800 nm. Therefore, the quinolinium crystal offers great potential for efficient and gap-free broadband THz wave generation.

Sub-100 fs single-walled carbon nanotube saturable absorber mode-locked Yb-laser operation near 1 µm

Transmission- and reflection-type single-walled carbon nanotube saturable absorbers (SWCNT-SAs) were designed and fabricated for passive mode-locking of bulk lasers in the 1 microm spectral range. Mode-locked laser operation based on a diffusion-bonded Yb:KYW/KYW crystal was demonstrated, and pulses as short as 83 fs and 140 fs were achieved applying reflection-type and transmission-type SWCNT-SA, respectively. The nonlinear parameters of the absorbers were measured to be in close vicinity to those of a semiconductor saturable absorber mirror for the same wavelength range. Mode-locking performance with SWCNT-SAs and the SESAM was compared utilizing the same cavity, with the SESAM resulting in only slightly shorter pulses of 66 fs duration. The nearly identical performance indicates that well-optimized SWCNT-SAs can substitute SESAMs even in the 1 microm region.