Fabio Vidimari

Design of Al-free and Al-based InGaAs/GaAs strained quantum well 980-nm pump lasers including thermal behavior effects on E/O characteristics

A 2D thermal simulator and a model to evaluate high power lasers characteristics have been developed. With these models it was possible to optimize cavity length of InGaAs/GaAs (Multiple) Quantum Well 980 nm lasers realized both with Al-based and Al-free confining layers. A comprehensive experimental investigation of the influence of cavity length and temperature on the laser emission wavelength has been performed. This allows a fine trimming of the devices to match the Erbium doped fiber absorption bandwidth.

Disordering of InGaAs/GaAs strained quantum well structures induced by rare gas ion implantation

In this work we have investigated the effect of various implantation schemes on In(0.2)GaAs/GaAs/AlGaAs Single Quantum Well, where the implanted species are Argon and Helium, with doses in the range 1E12 to 1E14 at cm^2, at energy spanning 270 - 400 KeV and 30 to 50 KeV for Ar and He, respectively. Repetitive annealing processes were carried out between 735 and 870 degree(s)C and the interdiffusion was deduced by photoluminescence measurements. A maximum of 20 nm shift from He ion implanted Quantum Well with an high degree of reconstruction has been recorded, thus allowing the application of this disordering scheme for the realization of optoelectronic devices.