Fabrice Severac

Distribution and segregation of arsenic at the SiO2/Si interface

The segregation and pile-up of arsenic atoms at the Si/SiO2 interface in steady state was investigated in detail by a combination of gracing incidence x-ray fluorescence spectroscopy (GI-XRF) measurements, electrical measurements, etching on the nanometer scale, and measurements of the step heights by interferometry. Using GI-XRF measurements and removal of the highly doped segregation layer by a sensitive etching process it was possible to distinguish clearly between the piled-up atoms and the arsenic atoms in the bulk over a large range of implantation doses, from 3×1012 to 1×1016 cm−2. The samples were annealed at different temperatures from 900 °C to 1200 °C for time periods long enough to make sure that the segregation reflects an equilibrium state. With additional step height measurements at line-space structures, the thickness of the layer with the piled-up arsenic and the shape of the segregation profile was determined. Electrical measurements indicated that the segregated arsenic atoms are deep d...

Detailed arsenic concentration profiles at Si/SiO2 interfaces

The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence x-ray fluorescence spectroscopy (GI-XRF), secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI-XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be ∼1×1015 cm−2 for an implanted dose of 1×1016 cm−2 with a maximum concentration of ∼10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve in...

Directed assembly of nanoparticles along predictable large-scale patterns using micromolded hydrogels.

We present a new technology to organize microparticles and nanoparticles along micropatterns of variable complexity over centimeter-squared surfaces. This technology relies on the fabrication of textured hydrogels, which serve as templates for directed assembly after the deposition of a droplet of colloids on their surfaces. We show that directed assembly occurs spontaneously during water evaporation, and we demonstrate the efficiency of this mechanism for a variety of organic and inorganic nano-objects. The dynamics of this process is also uncovered by light microscopy, showing that the patterns imprinted on the gel determine fluid flow during water evaporation and allow for directed movements toward predictable positions. We finally propose different methods to transfer assembled particles from hydrogels to glass, silicon, or metallic surfaces, and we show that the assembled and transferred particles retain their surface properties for bioassays. Beyond the originality of this spontaneous assembly mechanism, it constitutes an attractive technology for nano-object large-scale integration, which does not require costly environmental control equipment.

Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions

Hole mobility degradation has been studied in high-dose boron-implanted ultrashallow junctions containing high concentrations of boron-interstitial clusters (BICs), combining an empirical method based on the self-consistent interpretation of secondary-ion-mass spectrometry (SIMS) and Hall measurements and liquid-nitrogen (LN2) to room temperature (RT) hole mobility measurements. It has been found that BICs act as independent scattering centers which have a strong impact on hole mobility in addition to the other scattering mechanisms such as lattice and impurities scattering. A mobility degradation coefficient α has been introduced, which gives information on the mobility degradation level in the analyzed junctions. In the case of very high concentrations of BICs (containing a boron density up to 8×1014 cm−2), measured hole mobilities were found to be ∼40% lower than corresponding theoretical values. BICs dissolution through multiple Flash anneals at high temperature (1300 °C) reduces the observe mobility ...

Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions

The Hall scattering factor rH has been determined for holes in high-dose boron-implanted ultrashallow junctions containing high concentrations of boron-interstitial clusters (BICs), combining scanning capacitance microscopy, nanospreading resistance, Hall effect, and secondary ion mass spectroscopy measurements. A value of rH=0.74±0.1 has been found in reference defect-free fully activated junctions, in good agreement with the existing literature. In the case of junctions containing high concentrations of immobile and electrically inactive BICs, and independently of the implant or the annealing process, the rH value has been found to be equal to 0.95±0.1. The increase in the rH value is explained in terms of the additional scattering centers associated to the presence of high concentrations of BICs.