Fahrettin Sarcan

An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells

In this study, we investigate the effect of annealing and nitrogen amount on electronic transport properties in n- and p-type-doped Ga0.68In0.32NyAs1 − y/GaAs quantum well (QW) structures with y = 0%, 0.9%, 1.2%, 1.7%. The samples are thermal annealed at 700°C for 60 and 600 s, and Hall effect measurements have been performed between 10 and 300 K. Drastic decrease is observed in the electron mobility of n-type N-containing samples due to the possible N-induced scattering mechanisms and increasing effect mass of the alloy. The temperature dependence of electron mobility has an almost temperature insensitive characteristic, whereas for p-type samples hole mobility is decreased drastically at T > 120 K. As N concentration is increased, the hole mobility also increased as a reason of decreasing lattice mismatch. Screening effect of N-related alloy scattering over phonon scattering in n-type samples may be the reason of the temperature-insensitive electron mobility. At low temperature regime, hole mobility is higher than electron mobility by a factor of 3 to 4. However, at high temperatures (T > 120 K), the mobility of p-type samples is restricted by the scattering of the optical phonons. Because the valance band discontinuity is smaller compared to the conduction band, thermionic transport of holes from QW to the barrier material, GaAs, also contributes to the mobility at high temperatures that results in a decrease in mobility. The hole mobility results of as-grown samples do not show a systematic behavior, while annealed samples do, depending on N concentration. Thermal annealing does not show a significant improvement of electron mobility.

Influence of nitrogen on hole effective mass and hole mobility in p-type modulation doped GaInNAs/GaAs quantum well structures

Nitrogen dependence of hole effective mass and hole mobility in p-type modulation doped Ga0.68In0.32NyAs1−y/GaAs quantum well structures with y = 0, 0.009, 0.012, 0.017 are investigated using magnetotransport and Hall effect measurements. Observed N-dependent reduction of the hole effective mass is explained by stronger confinement of holes. Hole effective mass is also found to have hole density dependence due to the strain-induced valance band non-parabolicity. A tendency to decrease in hole effective mass upon annealing can be attributed to the reduction of well width and/or decrease in hole density. A significant improvement in low temperature hole mobility is observed after annealing.

Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures

Temperature and nitrogen dependence of 2D carrier mobility in as-grown and annealed Ga1−xInxNyAs1−y/GaAs quantum well (QW) structures (x = 0.32; y = 0, 0.009, and 0.012) are investigated. An analytical model that accounts for the most prominent scattering mechanisms is used to explain the characteristic of temperature dependence of the carrier mobility. An expression for alloy scattering-limited mobility in N-related alloys is developed to explain the behavior of hole mobility for N-containing p-type samples. Analytical modeling of temperature dependence of the electron mobility indicates that N-related alloy scattering and interface roughness scattering are the dominant mechanism at the entire temperature range of interest. The temperature insensitivity of the electron mobility is explained in terms of the overriding effect of N-related alloy scattering and high 2D electron density. A deviation between theoretical and experimental electron mobility at low temperatures is observed not to have any dependency on N concentration. We, therefore, suggest that CNM interaction parameter of the band anti-crossing (BAC) model must be defined as temperature dependent in order to explain the observed low temperature characteristics of electron mobility. The hole mobility is mainly restricted by interface roughness and alloy scatterings at temperatures lower than 100 K, whilst high temperature hole mobility is drastically affected from optical phonon scattering. Moreover, the hole mobility at high temperatures exhibits an N-independent characteristic and hole density starts to increase at temperatures above 70 K, which is explained using the concept of parallel conduction. Extraction of the hole density in each transport channel (QW and barrier) by using a simple parallel conduction extraction method (SPCEM) shows that, in p-type samples, low temperature hole mobility takes place in quantum well, while as temperature increases barrier channel also contribute to the hole mobility and becomes dominant at high temperatures. The experimental and calculated Hall mobility results reveal that thermal annealing has decreased interface roughness and alloy scatterings.

Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures

The excitation energy-dependent nature of Raman scattering spectrum, vibration, electronic or both, has been studied using different excitation sources on as-grown and annealed n- and p-type modulation-doped Ga1 − xInxNyAs1 − y/GaAs quantum well structures. The samples were grown by molecular beam technique with different N concentrations (y = 0%, 0.9%, 1.2%, 1.7%) at the same In concentration of 32%. Micro-Raman measurements have been carried out using 532 and 758 nm lines of diode lasers, and the 1064 nm line of the Nd-YAG laser has been used for Fourier transform-Raman scattering measurements. Raman scattering measurements with different excitation sources have revealed that the excitation energy is the decisive mechanism on the nature of the Raman scattering spectrum. When the excitation energy is close to the electronic band gap energy of any constituent semiconductor materials in the sample, electronic transition dominates the spectrum, leading to a very broad peak. In the condition that the excitation energy is much higher than the band gap energy, only vibrational modes contribute to the Raman scattering spectrum of the samples. Line shapes of the Raman scattering spectrum with the 785 and 1064 nm lines of lasers have been observed to be very broad peaks, whose absolute peak energy values are in good agreement with the ones obtained from photoluminescence measurements. On the other hand, Raman scattering spectrum with the 532 nm line has exhibited only vibrational modes. As a complementary tool of Raman scattering measurements with the excitation source of 532 nm, which shows weak vibrational transitions, attenuated total reflectance infrared spectroscopy has been also carried out. The results exhibited that the nature of the Raman scattering spectrum is strongly excitation energy-dependent, and with suitable excitation energy, electronic and/or vibrational transitions can be investigated.