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Dive into the research topics where Fang Jingyue is active.

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Featured researches published by Fang Jingyue.


Chinese Physics B | 2015

Tunable terahertz plasmon in grating-gate coupled graphene with a resonant cavity

Yan Bo; Yang Xinxin; Fang Jingyue; Huang Yongdan; Qin Hua; Qin Shiqiao

Plasmon modes in graphene can be tuned into resonance with an incident terahertz electromagnetic wave in the range of 1–4 THz by setting a proper gate voltage. By using the finite-difference-time-domain (FDTD) method, we simulate a graphene plasmon device comprising a single-layer graphene, a metallic grating, and a terahertz cavity. The simulations suggest that the terahertz electric field can be enhanced by several times due to the grating–cavity configuration. Due to this near-field enhancement, the maximal absorption of the incident terahertz wave reaches up to about 45%.


Chinese Physics B | 2014

Annealing effect of platinum-incorporated nanowires created by focused ion/electron-beam-induced deposition

Fang Jingyue; Qin Shiqiao; Zhang Xueao; Liu Dongqing; Chang Shengli

Focused ion-beam-induced deposition (FIBID) and focused electron-beam-induced deposition (FEBID) are convenient and useful in nanodevice fabrication. Since the deposition is from the organometallic platinum precursor, the conductive lines directly written by focused ion-beam (FIB) and focused electron-beam (FEB) are carbon-rich materials. We discuss an alternative approach to enhancing the platinum content and improving the conductivity of the conductive leads produced by FIBID and FEBID, namely an annealing treatment. Annealing in pure oxygen at 500 °C for 30 min enhances the platinum content values from ~18% to 30% and ~ 50% to 90% of FIBID and FEBID, respectively. Moreover, we find that thin films will be formed in the FIBID and FEBID processes. The annealing treatment is helpful to avoid the current leakage caused by these thin films. A single electron transistor is fabricated by FEBID and the current—voltage curve shows the Coulomb blockade effect.


Archive | 2015

Method for preparing PMMA-based carbon electrode

Chen Wei; Qin Shiqiao; Zhang Xueao; Wang Fei; Wang Guang; Fang Jingyue


Archive | 2014

Method for assembling ordered quantum dot matrix based on electrostatic potential well

Zhang Xueao; Wang Fei; Luo Wei; Fang Jingyue; Wang Guang; Chen Wei; Chang Shengli; Qin Shiqiao


Physical Experiment of College | 2013

Analysis for Reflectivity of High Reflective Film and Transmittance of Interference Filter with Different Incident Angles

Fang Jingyue


Archive | 2017

Single electron spin filter based on quantum dot

Fang Jingyue; Li Yongqiang; Li Xinxing; Qin Hua; Chang Shengli; Qin Shiqiao


Archive | 2017

Ionization formula gas sensor based on single electron transistor

Fang Jingyue; Wang Fei; Li Xinxing; Qiao Shuai; Zhang Xueao; Qin Hua; Chang Shengli; Qin Shiqiao


Archive | 2017

Method for preparing single-electron transistor by assembling gold particles on PS microsphere template

Fang Jingyue; Wang Fei; Sun Jiayu; Jiang Panpan; Liu Zhe; Fang Tao; Zhang Xueao; Qin Shiqiao


Archive | 2017

Multispectral detection method based on Fresnel zone plate and apparatus thereof

Fang Jingyue; Wang Xiaofeng; Jia Honghui; Chang Shengli


Archive | 2017

Electric charge probe based on single electron transistor

Fang Jingyue; Li Xinxing; Wang Fei; Zhang Xueao; Qin Hua; Chang Shengli; Qin Shiqiao

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Qin Shiqiao

National University of Defense Technology

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Chang Shengli

National University of Defense Technology

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Zhang Xueao

National University of Defense Technology

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Qin Hua

Chinese Academy of Sciences

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Jia Honghui

National University of Defense Technology

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Huang Yongdan

Chinese Academy of Sciences

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Liu Dongqing

National University of Defense Technology

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Yan Bo

Chinese Academy of Sciences

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Yang Xinxin

Chinese Academy of Sciences

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