Fangyuan Lu

High-Performance Few-layer Mo-doped ReSe2 Nanosheet Photodetectors

Transition metal dichalcogenides (TMDCs) have recently been the focus of extensive research activity owing to their fascinating physical properties. As a new member of TMDCs, Mo doped ReSe2 (Mo:ReSe2) is an octahedral structure semiconductor being optically biaxial and highly anisotropic, different from most of hexagonal layered TMDCs with optically uniaxial and relatively high crystal symmetry. We investigated the effects of physisorption of gas molecule on the few-layer Mo:ReSe2 nanosheet based photodetectors. We compared the photoresponse of the as-exfoliated device with annealed device both in air or ammonia (NH3) environment. After annealing at sub-decomposition temperatures, the Mo:ReSe2 photodetectors show a better photoresponsivity (~55.5 A/W) and higher EQE (10893%) in NH3 than in air. By theoretical investigation, we conclude that the physisorption of NH3 molecule on Mo:ReSe2 monolayer can cause the charge transfer between NH3 molecule and Mo:ReSe2 monolayer, increasing the n-type carrier density of Mo:ReSe2 monolayer. The prompt photoswitching, high photoresponsivity and different sensitivity to surrounding environment from the few-layer anisotropic Mo:ReSe2 can be used to design multifunctional optoelectronic and sensing devices.

Gas-dependent photoresponse of SnS nanoparticles-based photodetectors

SnS nanoparticles were synthesized with a facile hydrothermal method and characterized by X-ray diffraction (XRD), Raman, transmission electron microscope (TEM) and scanning electron microscope (SEM). The red light photoresponse of the SnS-based devices in different gas environments were also systematically investigated, and revealed that the adsorbed gas molecules play important roles in the photosensitive properties. Compared with that in vacuum, the photosensitivity was enhanced in O2 (or air) and reduced in NH3. The dynamic response time was much longer in a gas environment. These influences were ascribed to the charge transfer between the adsorbed gas molecules and SnS.

Wavelength dependent UV-Vis photodetectors from SnS2 flakes

2D layered materials have attracted increasing interest, owing to their unique properties and large potential for versatile applications. As one of the 2D layered semiconductors, tin disulfide (SnS2) is rarely reported compared with other 2D materials like molybdenum disulfide (MoS2). Herein, high quality SnS2 flakes were grown by a facile and low-cost path, and photodetectors based on thin SnS2 flakes were fabricated and characterized. These flakes are of high quality according to the results of XRD, Raman and TEM measurements, and present hexagonal and half-hexagonal forms with an average diameter of 100 μm. The devices based on these SnS2 flakes showed wavelength dependent photo-responsive characteristics as the illuminating wavelength varied in the UV-Vis range (from 100 to 800 nm). They also showed excellent photo-responsive characteristics under monochromic illumination using three different wavelengths (533, 405 and 255 nm) with high photo-responsivity and high external quantum efficiency (EQE). The experimental results agree well with the first-principles calculated band structure and optical absorption coefficient curve.

Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets

α-MoO3 nanosheets were synthesized by a water bath method using ammonium heptamolybdenum tetrahydrate and concentrated nitric acid as precursors. Hydrogen was doped by a chemical reduction in aqueous acidic media, with hydrazine hydrate used as the reducing agent. Temperature dependent resistance showed that the low temperature Peierls transition of H-doped MoO3 nanosheets breaks below 50 K, and its resistance is satisfied at temperatures lower than 37 K (37–10 K). This phenomenon was induced by thermal disturbance and the dominance of defects in low temperature transport, which was confirmed by photoresponse measurements taken before and after the break of the new phase.

Improving the field-effect performance of Bi2S3 single nanowires by an asymmetric device fabrication.

High-quality Bi2 S3 nanowires are synthesized by chemical vapor deposition and their intrinsic photoresponsive and field-effect characteristics are explored in detail. Among the studied Au-Au, Ag-Ag, and Au-Ag electrode pairs, the device with stepwise band alignment of asymmetric Au-Ag electrodes has the highest mobility. Furthermore, it is shown that light can cause a sevenfold decrease of the on/off ratio. This can be explained by the photoexcited charge carriers that are more beneficial to the increase of Ioff than Ion . The photoresponsive properties of the asymmetric Au-Ag electrode devices were also explored, and the results show a photoconductive gain of seven with a rise time of 2.9 s and a decay time of 1.6 s.

Effect of Electrical Contact on the Performance of Bi2S3 Single Nanowire Photodetectors

Bi2S3 single-crystalline nanowires are synthesized through a hydrothermal method and then fabricated into single nanowire photodetectors. Due to the different contact barrier between the gold electrode and Bi2S3 nanowires, two kinds of devices with different electrical contacts are obtained and their photoresponsive properties are investigated. The non-ohmic contact devices show larger photocurrent gains and shorter response times than those of ohmic contact devices. Furthermore, the influence of a focused laser on the barrier height between gold and Bi2S3 is explored in both kinds of devices and shows that laser illumination on the Au-Bi2S3 interface can greatly affect the barrier height in non-ohmic contact devices, while keeping it intact in ohmic contact devices. A model based on the surface photovoltage effect is used to explain this phenomenon.

Synthesis of Bi2S3–Bi2O3 composites and their enhanced photosensitive properties

Bi2S3–Bi2O3 composites were synthesized by a facile hydrothermal method with surfactant as template. The structure and morphology of the as-synthesized products were characterized in detail. The photosensitive behavior of the Bi2S3–Bi2O3 composites was investigated carefully. Under the illumination of a 650 nm laser in air or vacuum, the device displayed enhanced photosensitive performance compared to the pure Bi2S3, pure Bi2O3 and mechanical mixture of Bi2S3 and Bi2O3 based devices. The photoswitch ratio (Iphoto/Idark) was as high as 30 in a vacuum with fast photoresponse speed, which indicated their potential applications in manufacturing photodetectors and optoelectronic devices. The possible mechanism of enhanced photosensitivity was also proposed.

Oxygen-induced abnormal photoelectric behavior of a MoO3/graphene heterocomposite

A MoO3 nanoflakes/graphene heterocomposite synthesized by a water bath method showed unusual photoelectric behavior. Its resistance increased under visible light irradiation in air. The behavior arises from the physical contact between the two materials, which leads to hole doping in graphene. Thus, the increase of electrons in the MoO3 nanoflakes induced by desorption of oxygen molecules from its surface under visible light was probably the main reason for the change in resistance. This was confirmed by the resistance of the heterocomposite in a vacuum being 102 times larger than that in air, and by the photoelectric measurements under Ar. The MoO3 nanoflakes/graphene heterocomposite exhibits great potential for use in oxygen gas sensing.