Farha Y. Siddiqui

Mn doped nanostucture ZnO thin film for photo sensor and gas sensor application

Mn doped nanostructure ZnO thin film prepared by soft chemically route method. ZnO thin films were deposited on glass substrate by successive ionic layer adsorption and reaction technique (SILAR). After deposit ZnO thin film dipped in MnSO4 solution for 1 min. The optical properties as absorbance were determined using UV-Spectrophotometer and band gap was also calculated. The Structural properties were studied by XRD. The improvement in gas sensing properties was found to enhance after doping of Mn on ZnO thin film. The Photo Sensor nature was calculated by I-V characteristics.

Investigation on the effect of copper doping on CdS1-xSex thin films

ABSTRACT Here we report the generation of Cu2S nanoparticles within CdS0.8Se0.2 using cost effective chemical bath deposition technique on a glass substrate. The As-deposited CdS0.8Se0.2 films were doped with copper for different time intervals i.e. 20 sec, 60 sec and 100 sec, which shows an increase in band gap with an increase in doping time interval. XRD confirms the presence of hexagonal Cu2S phase with CdS0.8Se0.2 thin film after doping. Photovoltaic studies of prepared samples were investigated by I-V measurement system in dark and under illumination (100 W/cm2). I-V plot reveals the formation of a heterojunction between Cu2S and CdS0.8Se0.2.

Synthesis and characterization of CdS-polyelectrolyte-Bi2S3 thin film by SILAR

CdS-Polyelectrolyte-Bi2S3 was grown by cost effective successive ionic layer adsorption and reaction method (SILAR) on glass substrate. The polyelectrolyte used as a protecting layer for excessive ionic loss during the exchange reaction between the cation and anions of the reactants. Thin films was characterized for structural, morphological and an I-V characteristic. The X-ray diffraction pattern (XRD) pattern shows that, CdS-Polyelectrolyte-Bi2S3 thin films have mixed phase of hexagonal and orthorhombic crystal structures corresponding to CdS and Bi2S3 respectively. Scanning electron microscopy (SEM) corresponds deposition of the material along with the presence of bundle like shape is observed in thin film. The I-V measurement under dark and illumination to 100 mW/cm2 shows increase in photoconductivity.