Farizah Saharil

Dry adhesive bonding of nanoporous inorganic membranes to microfluidic devices using the OSTE(+) dual-cure polymer

We present two transfer bonding schemes for incorporating fragile nanoporous inorganic membranes into microdevices. Such membranes are finding increasing use in microfluidics, due to their precisel ...

Dry transfer bonding of porous silicon membranes to OSTE(+) polymer microfluidic devices

We present low temperature transfer bonding of porous silicon membranes to polymeric microfluidic devices, using neither adhesives nor bond surface treatment. The transfer is enabled by a novel dual cure ternary monomer system containing thiolene and epoxy. The ability of the epoxy to react with almost any dry substrate provides a very versatile fabrication method. We characterize the two stage curing mechanism, describe the device fabrication, and evaluate the bond strength.

Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on rf substrates

This paper presents a low temperature (200°C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on thin film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafer to an AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigated to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding.

A comparative study of the bonding energy in adhesive wafer bonding

Adhesion energies are determined for three different polymers currently used in adhesive wafer bonding of silicon wafers. The adhesion energies of the polymer off-stoichiometry thiol-ene-epoxy OSTE ...

Thin film crystal growth template removal : Application to stress reduction in lead zirconate titanate microstructures

A key issue for the design and reliability of microdevices is process related; residual stresses in the thin films from which they are composed, especially for sol-gel deposited Pb(Zrx,Ti1−x)O3 ceramics, where use of Pt as a template layer, though essential for the nucleation of the perovskite phase, results in structures with high levels of stress largely fixed by the thermal expansion coefficient mismatch between Pt and Si. Here a technique for the elimination of this stress is presented, involving the use of adhesive wafer bonding and bulk micromachining procedures to remove the Pt layer following the Pb(Zrx,Ti1−x)O3 deposition.

Low temperature adhesive wafer bonding using OSTE(+) for heterogeneous 3D MEMS integration

We demonstrate, for the first time, the use of off stoichiometry thiolene-epoxy, OSTE(+) for adhesive wafer bonding. The dual cure system, with an initial UV-curing step followed by a second thermal cure, allows for high bond strength and potentially high quality material interfaces. We show that cured OSTE(+) is easily removed in oxygen plasma and that the characteristics of OSTE(+) make it a potential candidate for use in heterogeneous 3D MEMS integration. Furthermore, we show how the bond energies of wafers bonded with OSTE(+) adhesive compares with the bond energies of wafers bonded with Cyclotene 3022-46 (BCB) and mr-I 9150XP nanoimprint resist.