Feng-Feng Zhang

Observation of Fermi arc and its connection with bulk states in the candidate type-II Weyl semimetal WTe2

Chenlu Wang, Yan Zhang, Jianwei Huang, Simin Nie, Guodong Liu1,∗, Aiji Liang, Yuxiao Zhang, Bing Shen, Jing Liu, Cheng Hu, Ying Ding, Defa Liu, Yong Hu, Shaolong He, Lin Zhao, Li Yu, Jin Hu, Jiang Wei, Zhiqiang Mao, Youguo Shi, Xiaowen Jia, Fengfeng Zhang, Shenjin Zhang, Feng Yang, Zhimin Wang, Qinjun Peng, Hongming Weng, Xi Dai, Zhong Fang, Zuyan Xu, Chuangtian Chen and X. J. Zhou1,5,∗ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA Military Transportation University, Tianjin 300161, China. Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China. These people contributed equally to the present work. ∗Corresponding author: gdliu arpes@iphy.ac.cn, XJZhou@iphy.ac.cn.

Orbital-selective spin texture and its manipulation in a topological insulator

Topological insulators represent a new quantum state of matter that are insulating in the bulk but metallic on the edge or surface. In the Dirac surface state, it is well-established that the electron spin is locked with the crystal momentum. Here we report a new phenomenon of the spin texture locking with the orbital texture in a topological insulator Bi₂Se₃. We observe light-polarization-dependent spin texture of both the upper and lower Dirac cones that constitutes strong evidence of the orbital-dependent spin texture in Bi₂Se₃. The different spin texture detected in variable polarization geometry is the manifestation of the spin-orbital texture in the initial state combined with the photoemission matrix element effects. Our observations provide a new orbital degree of freedom and a new way of light manipulation in controlling the spin structure of the topological insulators that are important for their future applications in spin-related technologies.

Electronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe 5

The topological materials have attracted much attention for their unique electronic structure and peculiar physical properties. ZrTe5 has host a long-standing puzzle on its anomalous transport properties manifested by its unusual resistivity peak and the reversal of the charge carrier type. It is also predicted that single-layer ZrTe5 is a two-dimensional topological insulator and there is possibly a topological phase transition in bulk ZrTe5. Here we report high-resolution laser-based angle-resolved photoemission measurements on the electronic structure and its detailed temperature evolution of ZrTe5. Our results provide direct electronic evidence on the temperature-induced Lifshitz transition, which gives a natural understanding on underlying origin of the resistivity anomaly in ZrTe5. In addition, we observe one-dimensional-like electronic features from the edges of the cracked ZrTe5 samples. Our observations indicate that ZrTe5 is a weak topological insulator and it exhibits a tendency to become a strong topological insulator when the layer distance is reduced.

167.75-nm vacuum-ultraviolet ps laser by eighth-harmonic generation of a 1342-nm Nd:YVO4 amplifier in KBBF.

We demonstrate a ps 167.75-nm vacuum-ultraviolet (VUV) laser by cascaded second-harmonic generation (SHG). The VUV laser is produced by eighth-harmonic generation (EHG) of a mode-locked ps 1342-nm Nd:YVO4 amplifier through three stages cascaded SHG with two LiB3O5 crystals and one KBe2BO3F2 crystal, successively. The 167.75-nm laser provides up to 65-μW output power, and the corresponding photon flux and photon flux density are 5.5×10(13)  s(-1) and 1.6×10(18)  s(-1)·cm(-2), respectively.

Directional couplers realized on silicon-on-insulator

An asymmetrical rib configuration of directional couplers was demonstrated numerically and experimentally. With this geometry structure, the effective coupling lengths were shortened to half of the conventional ones. These new 3-dB and cross couplers were fabricated on silicon-on-insulator wafers, with the measured insertion loss 2.3 dB, nonuniformity 0.2 dB. The full vector H~ field finite edge element method was applied to the design and analysis.

2.14 mW deep-ultraviolet laser at 165 nm by eighth-harmonic generation of a 1319 nm Nd:YAG laser in KBBF

We report a nanosecond (ns) 165 nm deep-ultraviolet (DUV) laser with a maximum average power of 2.14 mW by eighth-harmonic generation (EHG) of a homemade ns 1319 nm Nd:YAG laser. The EHG was performed by cascaded second-harmonic generation (SHG) through successive stages of two LiB3O5 crystals and one KBe2BO3F2 crystal. The generated radiation at 165 nm is the shortest DUV wavelength ever generated through SHG method and the highest average power of all solid state lasers below 170 nm to our knowledge. Such a ns DUV laser at 165 nm is of great interest for photoemission spectroscopy and Raman spectroscopy.

Sub-pm linewidth nanosecond Nd:GYSGG laser at 1336.6 nm.

We demonstrate a sub-pm linewidth acousto-optic (AO) Q-switched nanosecond Nd:GYSGG ring laser at 1336.6 nm side-pumped by 808-nm quasi-continuous wave (QCW) diode lasers for the first time. With incident pulse energy of 4.23 J at 10 Hz, a maximum output macropulse energy of 36.7 mJ at 1336.6 nm with linewidth of less than 0.85 pm and a micropulse width of 300 ns was obtained at a repetition rate of 80 Hz, corresponding to an average micropulse peak power of 15.3 kW. The M² factors were measured to be 1.42 and 1.10 in x and y directions, respectively. It can be tuned from 1336.576 to 1336.652 nm with a tuning resolution of 1 pm. The 1336.632 nm can be converted to deep ultraviolet (DUV) laser at 167.079 nm through its eighth harmonics, which is very useful for the ²⁷Al⁺ optical frequency standard.

Compact integrated star coupler on silicon-on-insulator

Asymmetrical rib waveguide bends on silicon-on-insulator were applied to the design of a compact integrated 39 /spl times/ 39 star coupler. With bend radius of 500 /spl mu/m, the effective chip size of the coupler is nearly 1 cm/sup 2/. The average excess loss as low as 1.3 dB was achieved at wavelength 1.55 /spl mu/m. This bend configuration is not single-mode, but by appropriate design, the fundamental mode propagation can be achieved. It can be used in arrayed waveguide grating devices based on SOI.

Narrow Linewidth 177.3-nm Nanosecond Laser With High Efficiency and High Power

We demonstrate a high-efficiency high average power vacuum ultraviolet (VUV) 177.3-nm laser with a narrow linewidth generated by second harmonic (SH) generation from a nanosecond (ns) 355-nm laser in the KBe2BO3F2 crystal. The 355-nm pumping source was a frequency-tripled Q-switched 1064-nm Nd:YAG oscillator-amplifier laser system, in which a quartz etalon was used to compress the linewidth of 1064-nm laser. Under a pump power of 5.2 W at 355 nm with a linewidth of 2 pm, a high average power of 146.5 mW at 177.3 nm with a linewidth of ~0.71 pm was obtained, corresponding to an SH conversion efficiency as high as 2.8%. This is, to the best of our knowledge, the highest output power and highest SH conversion efficiency for the ns 177.3-nm lasers. This VUV coherent light can be used as light source for fine precision spectroscopy and semiconductor photolithography owing to its narrow linewidth, high energy resolution, and high average power.

7.6 W 1342 nm passively mode-locked picosecond composite Nd:YVO 4 /YVO 4 laser with a semiconductor saturable absorber mirror

A high average power 1342 nm passively CW mode-locked picoseconds (ps) composite Nd:YVO4 laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The oscillator cavity was carefully designed to optimize the laser beam radii in the crystal and on the SESAM. The combination of composite bonded laser crystal, direct pumping, and dual end-pumped configuration was adopted to reduce the thermal effect and produce high output power with high beam quality. A maximum average output power of 7.63 W was obtained with a repetition rate of 77 MHz and a pulse duration of 24.2 ps under an absorbed pump power of 38.6 W, corresponding to an optical-optical efficiency of 19.7% and a slope efficiency of 25.9%, respectively. The beam quality factor M(2) was measured to be 1.49.