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Feng Si

University of Electronic Science and Technology of China

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Publication

Featured researches published by Feng Si.

Ceramics International | 2017

Temperature stable and high-Q microwave dielectric ceramics in the Li2Mg3−xCaxTiO6 system (x=0.00–0.18)

Zixuan Fang; Bin Tang; Feng Si; Shuren Zhang

Journal of Alloys and Compounds | 2017

Low temperature sintering of high permittivity Ca-Li-Nd-Ti microwave dielectric ceramics with BaCu(B2O5) additives

Zixuan Fang; Bin Tang; Feng Si; Shuren Zhang

Journal of Materials Science: Materials in Electronics | 2016

Influence of CeO2 on microstructure and microwave dielectric properties of Na1/2Sm1/2TiO3 ceramics

Zixuan Fang; Bin Tang; Feng Si; Shuren Zhang

Ceramics International | 2017

Phase evolution, structure and microwave dielectric properties of Li2+xMg3SnO6 (x = 0.00–0.12) ceramics

Zixuan Fang; Bin Tang; Feng Si; Enzhu Li; Hongyu Yang; Shuren Zhang

Journal of Electronic Materials | 2015

Microstructures and Microwave Dielectric Properties of Na0.5Nd0.2Sm0.3Ti1−xSnxO3 Ceramics (x = 0.00 to 0.50)

Zixuan Fang; Bin Tang; Yingxiang Li; Feng Si; Shuren Zhang

Journal of Materials Science: Materials in Electronics | 2015

Preparation and characterization of Ba0.2Sr0.8La4Ti4+xO15 microwave dielectric ceramics

Bin Tang; Feng Si; Yingxiang Li; Lin Liu; Shuren Zhang

Journal of Electronic Materials | 2017

A Temperature-Insensitive Ba3.75Nd9.5Ti17.5(Cr0.5Nb0.5)0.5O54 Microwave Dielectric Ceramic by Bi3+ Substitution

Hetuo Chen; Bin Tang; Xia Guo; Meng Wei; Feng Si; Ying Yuan; Shuren Zhang

Journal of Electronic Materials | 2016

Microwave Dielectric Properties of Ba0.2Sr0.8La4Ti4O15 Ceramic with La2O3-B2O3-TiO2 Doping

Yingxiang Li; Feng Si; Bin Tang; Ya Wang; Shuren Zhang

Journal of Electronic Materials | 2016

Effects of Zr-Substitution on Microwave Dielectric Properties of Na0.5Nd0.2Sm0.3Ti1−x Zr x O3 Ceramics (x = 0.00 ∼ 0.30)

Zixuan Fang; Bin Tang; Feng Si; Yuting Gong; Shuren Zhang

Crystals | 2017

Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature

Feng Si; Bin Tang; Zixuan Fang; Shuren Zhang

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Collaboration

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Bin Tang

University of Electronic Science and Technology of China

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Shuren Zhang

University of Electronic Science and Technology of China

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Zixuan Fang

University of Electronic Science and Technology of China

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Yingxiang Li

University of Electronic Science and Technology of China

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Enzhu Li

University of Electronic Science and Technology of China

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Hetuo Chen

University of Electronic Science and Technology of China

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Han Yang

University of Electronic Science and Technology of China

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Hao Li

Hunan University

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Hongyu Yang

University of Electronic Science and Technology of China

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Lin Liu

University of Electronic Science and Technology of China

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