Fengmei Wang

Visible light driven type II heterostructures and their enhanced photocatalysis properties: a review

Considerable efforts have been devoted to enhancing the photocatalytic activity and solar energy utilization of photocatalysts. The fabrication of type II heterostructures plays an important role in photocatalysts modification and has been extensively studied. In this review, we briefly trace the application of type II heterostructured semiconductors in the area of environmental remediation and water splitting, summarize major fabrication methods, describe some of the progress and resulting achievements, and discuss the future prospects. The scope of this review covers a variety of type II heterostructures, focusing particularly on TiO2 and ZnO based visible light driven type II 0D and 1D heterostructured photocatalysts. Some other low dimensional nanomaterials which have shown high-performance photocatalysis are also presented. We expect this review to provide a guideline for readers to gain a clear picture of fabrication and application of type II heterostructures.

Tunable GaTe-MoS2 van der Waals p–n Junctions with Novel Optoelectronic Performance

P-n junctions based on vertically stacked van der Waals (vdW) materials have attracted a great deal of attention and may open up unforeseen opportunities in electronics and optoelectronics. However, due to the lack of intrinsic p-type vdW materials, most previous studies generally adopted electrical gating, special electrode contacts, or chemical doping methods to realize p-n vdW junctions. GaTe is an intrinsic p-type vdW material with a relatively high charge density, and it has a direct band gap that is independent of thickness. Here, we report the construction of ultrathin and tunable p-GaTe/n-MoS2 vdW heterostructure with high photovoltaic and photodetecting performance. The rectification ratio, external quantum efficiency, and photoresponsivity are as high as 4 × 10(5), 61.68%, and 21.83 AW(-1), respectively. In particular, the detectivity is up to 8.4 × 10(13) Jones, which is even higher than commercial Si, InGaAs photodetectors. This study demonstrates the promising potential of p-GaTe/n-MoS2 heterostructures for next-generation electronic and optoelectronic devices.

Selenium-Enriched Nickel Selenide Nanosheets as a Robust Electrocatalyst for Hydrogen Generation

To address the urgent need for clean and sustainable energy, the rapid development of hydrogen-based technologies has started to revolutionize the use of earth-abundant noble-metal-free catalysts for the hydrogen evolution reaction (HER). Like the active sites of hydrogenases, the cation sites of pyrite-type transition-metal dichalcogenides have been suggested to be active in the HER. Herein, we synthesized electrodes based on a Se-enriched NiSe2 nanosheet array and explored the relationship between the anion sites and the improved hydrogen evolution activity through theoretical and experimental studies. The free energy for atomic hydrogen adsorption is much lower on the Se sites (0.13 eV) than on the Ni sites (0.87 eV). Notably, this electrode benefits from remarkable kinetic properties, with a small overpotential of 117 mV at 10 mA cm(-2) , a low Tafel slope of 32 mV per decade, and excellent stability. Control experiments showed that the efficient conversion of H(+) into H2 is due to the presence of an excess of selenium in the NiSe2 nanosheet surface.

Tungsten Oxide@Polypyrrole Core–Shell Nanowire Arrays as Novel Negative Electrodes for Asymmetric Supercapacitors

Among active pseudocapacitive materials, polypyrrole (PPy) is a promising electrode material in electrochemical capacitors. PPy-based materials research has thus far focused on its electrochemical performance as a positive electrode rather than as a negative electrode for asymmetric supercapacitors (ASCs). Here high-performance electrochemical supercapacitors are designed with tungsten oxide@PPy (WO3 @PPy) core-shell nanowire arrays and Co(OH)2 nanowires grown on carbon fibers. The WO3 @PPy core-shell nanowire electrode exhibits a high capacitance (253 mF/cm2) in negative potentials (-1.0-0.0 V). The ASCs packaged with CF-Co(OH)2 as a positive electrode and CF-WO3 @PPy as a negative electrode display a high volumetric capacitance up to 2.865 F/cm3 based on volume of the device, an energy density of 1.02 mWh/cm3 , and very good stability performance. These findings promote the application of PPy-based nanostructures as advanced negative electrodes for ASCs.

Ultrasensitive Phototransistors Based on Few-Layered HfS2.

An ultrathin HfS2 -based ultrasensitive phototransistor is systematically studied. Au-contacted HfS2 phototransistors with ideal thickness ranging from 7 to 12 nm exhibit a high on/off ratio of ca. 10(7) , ultrahigh photoresponsivity over 890 A W(-1) , and photogain over 2300. Moreover, the response time is strongly dependent on the back-gate voltage and shows a reverse trend for Au and Cr metals.

Role of Ga Vacancy on a Multilayer GaTe Phototransistor

We report a high-performance field-effect transistor (FET) and phototransistor based on back-gated multilayer GaTe nanosheets. Through both electrical transport measurements at variable temperatures and first-principles calculations, we find Ga ion vacancy is the critical factor that causes high off-state current, low on/off ratio, and large hysteresis of GaTe FET at room temperature. By suppressing thermally activated Ga vacancy defects at liquid nitrogen temperature, a GaTe nanosheet FET with on/off ratio of ∼10(5), off-state current of ∼10(-12) A, and negligible gate hysteresis is successfully demonstrated. Furthermore, a GaTe phototransistor with high photogain above 2000 and high responsivity over 800 AW(-1) is achieved, as well. Our findings are of scientific importance to understand the physical nature of intrinsic GaTe transistor performance degradation and also technical significance to unlock the hurdle for practical applications of GaTe transistors in the future.

van der Waals epitaxial ultrathin two-dimensional nonlayered semiconductor for highly efficient flexible optoelectronic devices.

Despite great progress in synthesis and application of graphene-like materials, it remains a considerable challenge to prepare two-dimensional (2D) nanostructures of nonlayered materials that may bring us surprising physical and chemical properties. Here, we propose a general strategy for the growth of 2D nonlayered materials by van der Waals epitaxy (vdWE) growth with two conditions: (1) the nonlayered materials satisfy 2D anisotropic growth and (2) the growth is implemented on the van der Waals substrates. Large-scale ultrathin 2D Pb(1-x)Sn(x)Se nanoplates (∼15-45 nm) have been produced on mica sheets by applying this strategy. Benefiting from the 2D geometry of Pb(1-x)Sn(x)Se nanoplates and the flexibility of mica sheet, flexible photodetectors that exhibit fast, reversible, and stable photoresponse and broad spectra detection ranging from UV to infrared light (375, 473, 632, 800, and 980 nm) are in situ fabricated based on Pb(1-x)Sn(x)Se nanoplates. We anticipate that more nonlayered materials will be developed into 2D nanostructures through vdWE, enabling the exploitation of novel electronic and optoelectronic devices.

Synthesis, properties and applications of 2D non-graphene materials

As an emerging class of new materials, two-dimensional (2D) non-graphene materials, including layered and non-layered, and their heterostructures are currently attracting increasing interest due to their promising applications in electronics, optoelectronics and clean energy. In contrast to traditional semiconductors, such as Si, Ge and III-V group materials, 2D materials show significant merits of ultrathin thickness, very high surface-to-volume ratio, and high compatibility with flexible devices. Owing to these unique properties, while scaling down to ultrathin thickness, devices based on these materials as well as artificially synthetic heterostructures exhibit novel and surprising functions and performances. In this review, we aim to provide a summary on the state-of-the-art research activities on 2D non-graphene materials. The scope of the review will cover the preparation of layered and non-layered 2D materials, construction of 2D vertical van der Waals and lateral ultrathin heterostructures, and especially focus on the applications in electronics, optoelectronics and clean energy. Moreover, the review is concluded with some perspectives on the future developments in this field.

Composition-Tuned ZnO/ZnxCd1–xTe Core/Shell Nanowires Array with Broad Spectral Absorption from UV to NIR for Hydrogen Generation

For highly efficient photoelectrodes, the materials used must have both a broad absorption range and large separation efficiency of photogenerated electron-hole pairs. Type II heterostructures with a ternary shell meet these two requirements and thus are recognized as being an ideal materials system for application in photocatalytic hydrogen production. Here, a ZnO/ZnxCd1-xTe core/shell nanowires array with a broad absorption edge from UV (380 nm) to NIR (855 nm) was fabricated via a chemical vapor-deposition method. More importantly, the ZnO/ZnxCd1-xTe core/shell nanowires array are highly single crystalline, and the composition can be continuously tuned by optimizing the deposition temperature, making the design of the desired photocatalyst possible. As expected, the single-crystalline ternary ZnxCd1-xTe shell greatly enhances the charge separation efficiency and prolongs the lifetime of photogenerated charge carriers, which contribute to the high photocatalytic and photoelectrocatalytic activity under light irradiation. In addition, ZnO/ZnxCd1-xTe core/shell structure show remarkable photocatalytic H2-production activity and high H2-production capability because of the synergistic light absorption of the ternary ZnxCd1-xTe shell and the formation of a type II heterostructure at the interface between the ZnO core and ZnxCd1-xTe shell. This work provides a new material platform for the design of highly efficient solar-fuel devices that demonstrate a broad and controllable absorption from the UV to NIR wavelengths.

Pt nanoparticle and CdS quantum dot assisted WO3 nanowires grown on flexible carbon fibers for efficient oxygen production

One-dimensional semiconductor nanomaterials are considered to be promising photocatalysts due to their large surface-to-volume ratio and high charge separation efficiency. Here, a Pt nanoparticle and CdS quantum dot (QD) co-decorated one-dimensional WO3 heterostructure was fabricated on flexible carbon fibers for water oxidation via a facile method. WO3 nanowires (NWs), with their advantage of resilience to photo-corrosion effects in aqueous solution, serve as the main photocatalyst; Pt nanoparticles and CdS QDs act as the co-photocatalyst. It was found that the photocurrent density of this novel nanostructure is about 5 times higher than that of pure WO3 under visible light irradiation. Significantly, the yield of O2 after the 5.5 h reaction time with the assistance of AgNO3 reaches 1 μmol. This work not only provides a conceptual blueprint for the design of a one dimensional heterostructure photocatalyst on flexible substrate to ameliorate its recyclability but also offers an excellent alternative material for application in renewable energy.