Fengyuan Zhang

Magnetoelectric Coupling in Well-Ordered Epitaxial BiFeO3/CoFe2O4/SrRuO3 Heterostructured Nanodot Array

Multiferroic magnetoelectric (ME) composites exhibit sizable ME coupling at room temperature, promising applications in a wide range of novel devices. For high density integrated devices, it is indispensable to achieve a well-ordered nanostructured array with reasonable ME coupling. For this purpose, we explored the well-ordered array of isolated epitaxial BiFeO3/CoFe2O4/SrRuO3 heterostructured nanodots fabricated by nanoporous anodic alumina (AAO) template method. The arrayed heterostructured nanodots demonstrate well-established epitaxial structures and coexistence of piezoelectric and ferromagnetic properties, as revealed by transmission electron microscopy (TEM) and peizoeresponse/magnetic force microscopy (PFM/MFM). It was found that the heterostructured nanodots yield apparent ME coupling, likely due to the effective transfer of interface couplings along with the substantial release of substrate clamping. A noticeable change in piezoelectric response of the nanodots can be triggered by magnetic field, indicating a substantial enhancement of ME coupling. Moreover, an electric field induced magnetization switching in these nanodots can be observed, showing a large reverse ME effect. These results offer good opportunities of the nanodots for applications in high-density ME devices, e.g., high density recording (>100 Gbit/in.(2)) or logic devices.

Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates.

Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ~60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch2) nonvolatile memories and other oxide nanoelectronic devices.

Significant enhancements of dielectric and magnetic properties in Bi(Fe1−xMgx)O3−x/2 induced by oxygen vacancies

Bi(Fe1?xMgx)O3?x/2 (x?=?0?10%) ceramics were synthesized by high-energy ball milling and solid-state reaction. It was found that a small amount of Mg doping leads to a dramatic enhancement in dielectric permittivity (?two orders of magnitude), along with an apparent improvement in ferromagnetism. The observed significant enhanced dielectric properties may be interpreted by the Maxwell?Wagner relaxation in association with internal barrier layer capacitance. The ferromagnetism can be ascribed to the creation of unbalanced Fe3+ spins and relative long-range coupling mediated by the oxygen vacancies trapped localized electrons.

Ferroelectric Resistive Switching in High-Density Nanocapacitor Arrays Based on BiFeO3 Ultrathin Films and Ordered Pt Nanoelectrodes

Ferroelectric resistive switching (RS), manifested as a switchable ferroelectric diode effect, was observed in well-ordered and high-density nanocapacitor arrays based on continuous BiFeO3 (BFO) ultrathin films and isolated Pt nanonelectrodes. The thickness of BFO films and the lateral dimension of Pt electrodes were aggressively scaled down to <10 nm and ∼60 nm, respectively, representing an ultrahigh ferroelectric memory density of ∼100 Gbit/inch(2). Moreover, the RS behavior in those nanocapacitors showed a large ON/OFF ratio (above 10(3)) and a long retention time of over 6,000 s. Our results not only demonstrate for the first time that the switchable ferroelectric diode effect could be realized in BFO films down to <10 nm in thickness, but also suggest the great potentials of those nanocapacitors for applications in high-density data storage.

High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states

Robust and reversible polar topological center domains were found in BiFeO3 nanodots, which are individually controllable. The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for these applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high-density arrays of epitaxial BiFeO3 (BFO) ferroelectric nanodots with a lateral size as small as ~60 nm. We demonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time but can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These results demonstrated that these reversibly switchable topological domain arrays are promising for applications in high-density nanoferroelectric devices such as nonvolatile memories.

Large electroresistance and tunable photovoltaic properties of ferroelectric nanoscale capacitors based on ultrathin super-tetragonal BiFeO3 films

Ferroelectric nanocapacitors with simultaneously tunable resistance and photovoltaic effect have great potential for realizing high-density non-volatile memories and multifunctional opto-electronic nanodevices. Here, using a polystyrene sphere template method, we developed well-ordered Au nanoelectrode arrays on super-tetragonal BiFeO3 (T-BFO)/La0.7Sr0.3MnO3 (LSMO) epitaxial thin films, forming Au/T-BFO/LSMO nanocapacitors. The nanocapacitors exhibited switchable resistance states and photovoltaic responses, controllable by the ferroelectric polarization of T-BFO. Owing to the giant polarization of T-BFO, both giant electroresistance (ON/OFF current ratio >20 000) and noticeable photovoltage (∼0.4 V) were achieved in the Au/T-BFO/LSMO nanocapacitors. These results demonstrate that the T-BFO-based nanocapacitors are promising for applications in high-density memories with multiple routes for non-destructive readout, as well as other multifunctional nanodevices.

Unique nano-domain structures in self-assembled BiFeO3 and Pb(Zr,Ti)O3 ferroelectric nanocapacitors

In this work, self-assembled ferroelectric BiFeO3 (BFO) and Pb(Zr,Ti)O3 (PZT) nanocapacitors were fabricated by a one-step pulsed-laser deposition process. Each individual nanocapacitor consists of a SrRuO3 or LaSrMnO3 bottom electrode layer, an epitaxial ferroelectric middle layer and a self-assembled nanoisland of conductive Bi2O3 or PbO2 as the top nanoelectrode. The nanoelectrodes have a lateral size of 10-100 nm depending on various deposition equivalent thickness. The as-fabricated nanocapacitors exhibit unique so-called anti-domain structures, with opposite polarization orientation to that of the naked ferroelectric films, which can be understood by the different interface built-in-voltages between their neighboring layers. They also show apparent reduced coercive fields and enhanced piezoelectricity compared to the naked films, as revealed by the switching spectroscopy piezoresponse force microscopy (SSPFM) and band-excitation mapping. Besides that, individual addressable polarization writing and erasing properties were also observed in these nanocapacitors and the written domain can maintain stability up to 12 h, which is promising for data storage devices.

One-Step Mask Etching Strategy Toward Ordered Ferroelectric Pb(Zr0.52Ti0.48)O3 Nanodot Arrays

In this report, ordered lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanodot arrays were fabricated by an original one-step mask etching route. The one-step mask etching strategy is based on the patterned nanostructure of barrier layer (BL) at the bottom of anodic aluminum oxide (AAO), by a direct transfer of the nanopattern from BL to the pre-deposited PZT film, without introduction of any sacrifice layer and lithography. Therefore, the presented strategy is relatively simple and economical. X-ray diffraction and Raman analysis revealed that the as-prepared PZT was in a perovskite phase. Atomic and piezoresponse force microscopy indicated that the PZT nanodot arrays were with both good ordering and well-defined ferroelectric properties. Considering its universality on diverse substrates, the present method is a general approach to the high-quality ordered ferroelectric nanodot arrays, which is promising for applications in ultra-high density nonvolatile ferroelectric random access memories (NV-FRAM).