Flemming Bjerg Grumsen

On the crystal structure of Z-phase Cr(V,Nb)N

TheZ-phase Cr(V,Nb)N particles in various 9 to 12 pct Cr creep-resistant steels were investigated with electron diffraction, energy dispersive spectroscopy (EDS), and electron energy loss spectroscopy (EELS). In addition to the well-known tetragonal crystal structure forZ phase, a cubic crystal structure was identified for Cr(V,Nb)N and CrVN particles, but not for CrNbN. The tetragonal and cubic crystal structures were observed to coexist within the same particles, and the orientation relationship between the two lattices was determined. Understanding and controlling the nucleation of Cr(V,Nb)N particles could be of crucial importance to enable improvement of the long-term creep stability of 9 to 12 pct Cr martensitic steels.

New amorphous interface for precipitate nitrides in steel

According to classical theories precipitate interfaces are described by their degree of coherency with the matrix, which affects their strengthening contribution. Investigations of nitride precipitate interfaces in 12% Cr steels with transmission electron microscopy have shown the nitrides to be enveloped in an amorphous shell a few nm thick, thus leaving them without any coherency with the matrix. The amorphous nature of the shells could be ascertained with high resolution microscopy and dark field techniques. When extracted from the ferrite matrix the amorphous shells were observed to crystallize during electron beam exposure. The amorphous shells were observed around Ta- and Nb-based nitrides, which are considered to have a high interfacial energy with the ferrite matrix. They were not observed around V-based nitrides which have a Baker–Nutting relationship with low-misfit to the matrix.

Characterization of pack cemented Ni2Al3 coating exposed to KCl(s) induced corrosion at 600 °C

Abstract Oxidation of Ni2Al3 produced by pack aluminizing of pure nickel was studied with and without 0.10 mg cm−2 KCl(s) deposit in an environment containing 5% O2, 40% H2O and 55% N2 at 600 °C for up to 168 h. Oxide microstructure and composition was investigated by SEM/EDX, BIB, TEM and GDOES. Oxidised Ni2Al3 shows minimal weight gain, while adding KCl results in a small weight loss consistent with evaporation of KCl. On the surface of samples exposed to the gas environment only, a 30 nm oxide of Al oxide was present, but where KCl was present as deposit, 50–250 nm thick nodules form that are enriched in K, O and Al.

Parametric Study of Solder Flux Hygroscopicity: Impact of Weak Organic Acids on Water Layer Formation and Corrosion of Electronics

The presence of solder flux residues on the printed circuit board assembly surface is an important factor contributing to humidity-related reliability issues that affect device lifetime. This investigation focuses on understanding the hygroscopic nature of typical wave solder flux activators—weak organic acids—under varied temperature conditions. In situ x-ray diffraction measurements assessed the effect of high temperature on the crystal structure of organic activators. The hygroscopicity studies were carried out under relative humidity (RH) levels varying from 30% to ∼ 99% and at temperatures 25°C, 40°C, and 60°C. Water absorption levels were determined using the gravimetric method, and the influence on reliability was assessed using electrochemical impedance and leak current measurements performed on the surface insulation resistance comb patterns. The corrosion studies were correlated with the hygroscopicity results and solubility data. Corrosion morphology was analysed using the optical microscopy and scanning electron microscopy. The results show that the hygroscopic nature of typical solder flux residue depends on its chemical structure and temperature. An increase of temperature shifts the critical RH level for water vapour absorption towards lower RH range, accelerating the formation of a conductive electrolyte and the occurrence of ion transport-induced electrochemical migration. The overall ranking of flux activators with the increasing order of aggressivity is: palmitic < suberic  < adipic < succinic < glutaric < dl-malic acid.

Discontinuous precipitation in a nickel-free high nitrogen austenitic stainless steel on solution nitriding

Abstract Chromium-rich nitride precipitates in production of nickel-free austenitic stainless steel plates via pressurised solution nitriding of Fe–22.7Cr–2.4Mo ferritic stainless steel at 1473 K (1200 °C) under a nitrogen gas atmosphere was investigated. The microstructure, chemical and phase composition, morphology and crystallographic orientation between the resulted austenite and precipitates were investigated using optical microscopy, X-ray Diffraction (XRD), Scanning and Transmission Electron Microscopy (TEM) and Electron Back Scatter Diffraction (EBSD). On prolonged nitriding, Chromium-rich nitride precipitates were formed firstly close to the surface and later throughout the sample with austenitic structure. Chromium-rich nitride precipitates with a rod or strip-like morphology was developed by a discontinuous cellular precipitation mechanism. STEM-EDS analysis demonstrated partitioning of metallic elements between austenite and nitrides, with chromium contents of about 80 wt.% in the precipitates. XRD analysis indicated that the Chromium-rich nitride precipitates are hexagonal (Cr, Mo)2N. Based on the TEM studies, (Cr, Mo)2N precipitates presented a (1 1 1)γ//(0 0 2)(Cr, Mo)2N, γ//(Cr, Mo)2N orientation relationship with respect to the austenite matrix. EBSD studies revealed that the austenite in the regions that have transformed into austenite and (Cr, Mo)2N have no orientation relation to the untransformed austenite.

Ge-nanostructures doped silica-on-silicon waveguides

Ge nanostructures embedded in silica matrix are emerging as a promising material for new generation devices due to the unique electric and photonic properties. In this paper, Ge nanoclusters and nanocylinders with Ge shell were successfully formed by the high energy electron irradiation in the PECVD deposited glass. In addition, large area Ge nanoclusters were also created by heat-treatment of PECVD deposited glass film. These nanostructures were characterized in terms of size, composition, distribution and crystalline state by using TEM, HRTEM, EDS, SEM, Raman spectroscopy, and SIMS. Waveguides doped with Ge nanoclusters were fabricated and their absorption has been characterized in a wavelength range from 500nm to 1700nm.