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Dive into the research topics where Fortunato Dualibe is active.

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Featured researches published by Fortunato Dualibe.


latin american symposium on circuits and systems | 2013

Fully integrated single-inductor multiple-output (SIMO) DC-DC converter in CMOS 65 nm technology

Angel J. Soto; Esteban O. Lindstrom; Alejandro R. Oliva; Pablo Sergio Mandolesi; Fortunato Dualibe

In the nanoscale technologies, the on-chip Power Management design strategy as a part of a System on Chip (SoC) is becoming extremely important. This work presents a fully integrated SIMO converter in a CMOS 65 nm technology. Since passive components are also integrated and their values should result relatively small the converter operates at a switching frequency of 200 MHz. This version counts with a step-up and a step-down outputs, but it can be easily extended to more otuputs. A suitable control strategy for high speed and nano-scale process together with system simulation results are discused.


international microwave symposium | 2014

A very high frequency step-down DC/DC converter for spaceborne envelope-tracking SSPA

Fabien Leroy; Nicolas Le Gallou; Christophe Delepaut; Olivier Deblecker; Fortunato Dualibe

An experimental VHF DC/DC converter aimed at envelope-tracking amplifiers for space applications is presented. Based on Gallium Nitride components, it is capable of operating in the range of tens of watts, as required by on-board transmitters. When driven by a 50-MHz PWM signal, it reaches a peak efficiency of 91.6%. A detailed breakdown of the associated losses is reported in order to identify the contributions. Additional measurements at 67 MHz show a peak efficiency of 89.8%.


IEEE Microwave Magazine | 2017

Europe and the Future for WPT: European Contributions to Wireless Power Transfer Technology

Nuno Borges Carvalho; Ning Pan; Dominique Schreurs; Nobby Stevens; Wout Joseph; Ben Minnaert; L. M. Pessoa; Luca Roselli; Apostolos Georgiadis; Fortunato Dualibe; Alessandra Costanzo; Jan Kracek; Senol Mutlu; Hendrik Rogier; Huib Visser; Alexandru Takacs; Paolo Rocca; Antonis G. Dimitriou; Jerzy Michalski; Zbynek Raida; Smail Tedjini; Yvan Duroc; John N. Sahalos; Aggelos Bletsas; Theodoros Samaras; Sotiris Nikoletseas; Theofanis P. Raptis; Alrio Boaventura; Ana Collado; Riccardo Trevisan

This article presents European-based contributions for wireless power transmission (WPT), related to applications ranging from future Internet of Things (IoT) and fifth-generation (5G) systems to high-power electric vehicle charging. The contributors are all members of a European consortium on WPT, COST Action IC1301. WPT is the driving technology that will enable the next stage in the current consumer electronics revolution, including batteryless sensors, passive RF identification (RFID), passive wireless sensors, the IoT, and machine-to-machine solutions. The article discusses the latest developments in research by some of the members of this group.This article presents recent European-based contributions for wireless power transmission (WPT), related to applications ranging from future Internet of Things (IoT) and fifth-generation (5G) systems to highpower electric vehicle charging. The contributors are all members of a European consortium on WPT, COST Action IC1301 (Table 1). WPT is the driving technology that will enable the next stage in the current consumer electronics revolution, including batteryless sensors, passive RF identification (RFID), passive wireless sensors, the IoT, and machine-to-machine solutions.


latin american symposium on circuits and systems | 2013

A low voltage CMOS voltage reference based on partial compensation of MOSFET threshold voltage and mobility using current subtraction

Luis Eduardo Toledo; Pablo A. Petrashin; Walter J. Lancioni; Fortunato Dualibe; Luis Rafael Canali

A novel scheme for a CMOS low-voltage reference is proposed. It uses current subtraction between the currents generated by two instances of the same current generator circuit, each one configured with different magnitude and temperature coefficients. Temperature stability is achieved owing to the partial compensation of the MOSFET threshold voltage and mobility temperature effects. For a nominal reference voltage of 436.5 mV, SPICE simulation reveals a ±38.2 ppm/°C temperature coefficient within the range of -20 °C to 100°C.


IEEE Microwave Magazine | 2017

Europe and the future for WPT

Nuno Borges Carvalho; Apostolos Georgiadis; Alessandra Costanzo; Nobby Stevens; Jan Kracek; L. M. Pessoa; Luca Roselli; Fortunato Dualibe; Dominique Schreurs; Senol Mutlu; Hendrik Rogier; Huib Visser; Alexandru Takacs; Paolo Rocca; Antonis G. Dimitriou; Jerzy Michalski; Zbynek Raida; Smail Tedjini; Wout Joseph; Yvan Duroc; John N. Sahalos; Aggelos Bletsas; Theodoros Samaras; Sotiris Nikoletseas; Theofanis P. Raptis; Alrio Boaventura; Ana Collado; Riccardo Trevisan; Ben Minnaert; Milan Svanda

This article presents European-based contributions for wireless power transmission (WPT), related to applications ranging from future Internet of Things (IoT) and fifth-generation (5G) systems to high-power electric vehicle charging. The contributors are all members of a European consortium on WPT, COST Action IC1301. WPT is the driving technology that will enable the next stage in the current consumer electronics revolution, including batteryless sensors, passive RF identification (RFID), passive wireless sensors, the IoT, and machine-to-machine solutions. The article discusses the latest developments in research by some of the members of this group.This article presents recent European-based contributions for wireless power transmission (WPT), related to applications ranging from future Internet of Things (IoT) and fifth-generation (5G) systems to highpower electric vehicle charging. The contributors are all members of a European consortium on WPT, COST Action IC1301 (Table 1). WPT is the driving technology that will enable the next stage in the current consumer electronics revolution, including batteryless sensors, passive RF identification (RFID), passive wireless sensors, the IoT, and machine-to-machine solutions.


european conference on power electronics and applications | 2014

Efficient hard-switching DC/DC converters for envelope-tracking applications

Fabien Leroy; Olivier Deblecker; Fortunato Dualibe; Christophe Delepaut; Nicolas Le Gallou

This paper presents two buck converters switching at 50 MHz and based on Gallium Nitride dice. The first converter features a diode designed for power applications and demonstrates 87.9% peak efficiency. The diode mounted on the second one is aimed at higher-frequency operation and brings this value up above 91% in the same operating conditions. Loss contributions are evaluated, showing the influence of the diode alone on the efficiency of such converters.


international midwest symposium on circuits and systems | 2017

A 0.5 V fully differential transimpedance amplifier in 65-nm CMOS technology

Hugo Garcia-Vazquez; Fortunato Dualibe; Grigory Popov

This paper proposes a novel fully differential ultra-low voltage transimpedance amplifier (TIA) based on a CMOS translinear circuit. Following a simple bias strategy, its transimpedance gain can be adjusted to the desired accuracy either by means of an external resistor or using internal voltage and current references. To a first order approach, the transresistance results independent from technological parameters. The amplifier does not need a common mode feedback circuit (CMFB) to set the quiescent output voltages. The circuit was sized and simulated in a 65-nm CMOS process to comply with a 10kΩ transimpedance gain and 1MHz@1pF bandwidth. For a 0.5V supply voltage the total power consumption is 78.5μW.


IEEE Microwave Magazine | 2017

Europe and the future for WPT COST action IC1301 team

Nuno Borges Carvalho; Apostolos Georgiadis; Alessandra Costanzo; Nobby Stevens; Jan Kracek; L. M. Pessoa; Luca Roselli; Fortunato Dualibe; Dominique Schreurs; Senol Mutlu; Hendrik Rogier; Huib Visser; Alexandru Takacs; Paolo Rocca; Antonis G. Dimitriou; Jerzy Michalski; Zbynek Raida; Smail Tedjini; Wout Joseph; Yvan Duroc; John N. Sahalos; Aggelos Bletsas; Theodoros Samaras; Sotiris Nikoletseas; Theofanis P. Raptis; Alrio Boaventura; Ana Collado; Riccardo Trevisan; Ben Minnaert; Milan Svanda

This article presents European-based contributions for wireless power transmission (WPT), related to applications ranging from future Internet of Things (IoT) and fifth-generation (5G) systems to high-power electric vehicle charging. The contributors are all members of a European consortium on WPT, COST Action IC1301. WPT is the driving technology that will enable the next stage in the current consumer electronics revolution, including batteryless sensors, passive RF identification (RFID), passive wireless sensors, the IoT, and machine-to-machine solutions. The article discusses the latest developments in research by some of the members of this group.This article presents recent European-based contributions for wireless power transmission (WPT), related to applications ranging from future Internet of Things (IoT) and fifth-generation (5G) systems to highpower electric vehicle charging. The contributors are all members of a European consortium on WPT, COST Action IC1301 (Table 1). WPT is the driving technology that will enable the next stage in the current consumer electronics revolution, including batteryless sensors, passive RF identification (RFID), passive wireless sensors, the IoT, and machine-to-machine solutions.


international midwest symposium on circuits and systems | 2016

Using scattering parameters and the g m /I D MOST ratio for characterisation and design of RF circuits

Juan Luis Castagnola; Fortunato Dualibe; Hugo Garcia-Vazquez

This work presents a design methodology for RF circuits. It is based on the transistor physics, provided by the MOS advanced compact model (ACM) and the scattering parameters, which have been expressed in function of the transconductance-to-current ratio (gm/ID) of MOS transistors. Since the scattering parameters of the circuits are parameterized by means of the gm/ID ratios of MOST, designers can choose the latter in order to optimise transistor size and bias to comply with the circuit specs, which are normally given in terms of the scattering parameters. As an example, this method has been applied for designing the common source stage of a low noise amplifier (LNA).


ieee wireless power transfer conference | 2016

A 65-nm CMOS battery-less temperature sensor node for RF-powered wireless sensor networks

Grigory Popov; Fortunato Dualibe; Véronique Moeyaert; Papy Ndungidi; Hugo García-Vázquez; Carlos Valderrama

This work presents the design of a temperature sensor in a 65nm CMOS technology, which is powered by harvesting the electromagnetic energy in the ISM frequency band (2.4GHz). The power consumption of the sensor was substantially reduced so that the energy required to operate could be stored in a 50μF external capacitor. The rectifier sensitivity has been improved so as to allow autonomous operation from a distance of 2m to a conventional Wi-Fi transmitter (2.4GHz@100mW). To achieving these features, all circuits were designed for operating at 0.5V supply voltage. The measured temperature value is transmitted within another frequency band, the European UHF (867 MHz), by using 4-FSK modulation.

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Pablo A. Petrashin

Catholic University of Cordoba

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Luis Eduardo Toledo

Catholic University of Cordoba

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Walter J. Lancioni

Catholic University of Cordoba

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Ben Minnaert

Katholieke Universiteit Leuven

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Dominique Schreurs

Katholieke Universiteit Leuven

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