Francesca Turco

Xenon–Nitrogen Chemistry: Gas‐Phase Generation and Theoretical Investigation of the Xenon–Difluoronitrenium Ion F2NXe+

The xenon-difluoronitrenium ion F(2)N-Xe(+) , a novel xenon-nitrogen species, was obtained in the gas phase by the nucleophilic displacement of HF from protonated NF(3) by Xe. According to Møller-Plesset (MP2) and CCSD(T) theoretical calculations, the enthalpy and Gibbs energy changes (ΔH and ΔG) of this process are predicted to be -3 kcal mol(-1) . The conceivable alternative formation of the inserted isomers FN-XeF(+) is instead endothermic by approximately 40-60 kcal mol(-1) and is not attainable under the employed ion-trap mass spectrometric conditions. F(2)N-Xe(+) is theoretically characterized as a weak electrostatic complex between NF(2)(+) and Xe, with a Xe-N bond length of 2.4-2.5 Å, and a dissociation enthalpy and free energy into its constituting fragments of 15 and 8 kcal mol(-1), respectively. F(2)N-Xe(+) is more fragile than the xenon-nitrenium ions (FO(2)S)(2)NXe(+), F(5)SN(H)Xe(+), and F(5)TeN(H)Xe(+) observed in the condensed phase, but it is still stable enough to be observed in the gas phase. Other otherwise elusive xenon-nitrogen species could be obtained under these experimental conditions.

Ion chemistry in germane/fluorocompounds gaseous mixtures: a mass spectrometric and theoretical study

The ion-molecule reactions occurring in GeH(4)/NF(3), GeH(4)/SF(6), and GeH(4)/SiF(4) gaseous mixtures have been investigated by ion trap mass spectrometry and ab initio calculations. While the NF(x)(+) (x=1-3) react with GeH(4) mainly by the exothermic charge transfer, the open-shell Ge(+) and GeH(2)(+) undergo the efficient F-atom abstraction from NF(3) and form GeF(+) and F-GeH(2)(+) as the only ionic products. The mechanisms of these two processes are quite similar and involve the formation of the fluorine-coordinated complexes Ge-F-NF(2)(+) and H(2)Ge-F-NF(2)(+), their subsequent crossing to the significantly more stable isomers FGe-NF(2)(+) and F-GeH(2)-NF(2)(+), and the eventual dissociation of these ions into GeF(+) (or F-GeH(2)(+)) and NF(2). The closed-shell GeH(+) and GeH(3)(+) are instead much less reactive towards NF(3), and the only observed process is the less efficient formation of GeF(+) from GeH(+). The theoretical investigation of this unusual H/F exchange reaction suggests the involvement of vibrationally-hot GeH(+). Passing from NF(3) to SF(6) and SiF(4), the average strength of the M-F bond increases from 70 to 79 and 142 kcal mol(-1), and in fact the only process observed by reacting GeH(n)(+) (n=0-3) with SF(6) and SiF(4) is the little efficient F-atom abstraction from SF(6) by Ge(+). Irrespective of the experimental conditions, we did not observe any ionic product of Ge-N, Ge-S, or Ge-Si connectivity. This is in line with the previously observed exclusive formation of GeF(+) from the reaction between Ge(+) and C-F compounds such as CH(3)F. Additionally observed processes include in particular the conceivable formation of the elusive thiohypofluorous acid FSH from the reaction between SF(+) and GeH(4).

Positive Ion Chemistry of SiH4/NF3 Gaseous Mixtures Studied by Ion Trap Mass Spectrometry

The positive ion chemistry occurring in silane/nitrogen trifluoride gaseous mixtures has been investigated by ion trap mass spectrometry. Reaction sequences and rate constants have been determined for the processes involving the primary ions SiH n + (n = 0–3) and NF x + (x = 1–3) and the secondary ions obtained from their reactions with SiH4 and NF3. The SiH n + efficiently react with NF3 and undergo cascades of abstraction and scrambling reactions which form the fluorinated and perfluorinated cations SiHF m + (m = 1, 2), SiH2F+ and SiF x + (x = 1–3). Fluorinated Si2-clusters such as Si2H2F+, Si2H3F+ and Si2H5F+ were also observed. The reaction of both SiH3+ and SiH2F+ with NF3 produces the elusive fluoronitrenium ion NHF+. Any NF x + reacts with SiH4 mainly by charge transfer. Additional ionic products are, however, observed which suggest intimate reaction complexes. Worth mentioning is the formation of SiNH2+ from the reaction of both NF+ and NHF+ with SiH4. The primary ions NF2+ and SiH3+ are also “sink” species in our observed chemistry.

Gas-phase reactions of XH3+ (X = C, Si, Ge) with NF3: a comparative investigation on the detailed mechanistic aspects

The gas-phase reaction of CH(3)(+) with NF(3) was investigated by ion trap mass spectrometry (ITMS). The observed products include NF(2)(+) and CH(2)F(+). Under the same experimental conditions, SiH(3)(+) reacts with NF(3) and forms up to six ionic products, namely (in order of decreasing efficiency) NF(2)(+), SiH(2)F(+), SiHF(2)(+), SiF(+), SiHF(+), and NHF(+). The GeH(3)(+) cation is instead totally unreactive toward NF(3). The different reactivity of XH(3)(+) (X = C, Si, Ge) toward NF(3) has been rationalized by ab initio calculations performed at the MP2 and coupled cluster level of theory. In the reaction of both CH(3)(+) and SiH(3)(+), the kinetically relevant intermediate is the fluorine-coordinated isomer H(3)X-F-NF(2)(+) (X = C, Si). This species forms from the exoergic attack of XH(3)(+) to one of the F atoms of NF(3) and undergoes dissociation and isomerization processes which eventually result in the experimentally observed products. The nitrogen-coordinated isomers H(3)X-NF(3)(+) (X = C, Si) were located as minimum-energy structures but do not play an active role in the reaction mechanism. The inertness of GeH(3)(+) toward NF(3) is also explained by the endoergic character of the dissociation processes involving the H(3)Ge-F-NF(2)(+) isomer.

Ion/molecule reactions in SiH4/H2S and GeH4/H2S mixtures.

The gas phase ion chemistry of silane/hydrogen sulfide and germane/hydrogen sulfide mixtures was studied by ion trap mass spectrometry (ITMS), in both positive and negative ionization mode. In positive ionization, formation of X/S (X = Si, Ge) mixed ions mainly takes place via reactions of silane or germane ions with H(2)S, through condensation followed by dehydrogenation. This is particularly evident in the system with silane. On the other side, reactions of H(n)S(2)(+) ions with XH(4) (X = Si, Ge) invariably lead to formation of a single X-S bond. In negative ionization, a more limited number of mixed ion species is detected, but their overall abundance reaches appreciable values, especially in the SiH(4)/H(2)S system. Present results clearly indicate that ion processes play an important role in formation and growth of clusters eventually leading to deposition of amorphous solids in chemical vapor deposition (CVD) processes.

Gas-phase ion chemistry of GeH 4 /B 2 H 6 mixtures

The gas phase ion-molecule reactions in positively and negatively ionized germane/diborane mixtures have been studied by ion trap mass spectrometry. Reaction sequences and rate constants for the most interesting processes have been determined. In positive ionization, formation of Ge-B bonds exclusively occurs through condensation reactions of B n H m + ions with germane, followed by H2 or BH3 loss. No reactions of ions from germane with B2H6 were observed under the experimental conditions used here. In negative ionization, the Ge n H m (n = 1, 2) ion families react with diborane to yield the Ge n B p H q -(p = 1, 2) ions, again via dehydrogenation and BH3 loss, while diborane anions proved to be unreactive. In both positive and negative ionization, Ge-B ions reach appreciable abundances. The present results afford fundamental information about the intrinsic reactivity of gas-phase ions and provide valuable indications about the first nucleation steps ultimately leading to amorphous Ge and B-doped semiconductor materials by chemical vapor deposition methods.

Positive ion chemistry of SiH4/GeF4 gaseous mixtures studied by ion trap mass spectrometry and ab initio calculations.

The positive ion chemistry occurring in SiH4/GeF4 gaseous mixtures was investigated by ion trap mass spectrometry and ab initio theoretical calculations. The GeF3+ cation, the only fragment obtained from ionised GeF4, was unreactive towards SiH4. All the primary ions SiH n + (n = 0–3) react instead with GeF4 to form SiF+ or SiH2F+. The latter species reacts in turn with SiH4 and GeF4 to form SiH3+ and SiHF2+, respectively. The potential energy profiles conceivably involved in these reactions were investigated by ab initio calculations performed at the MP2 and coupled cluster [CCSD(T)] level of theory.