Francesco Sarti

Mechanism of hot electron electroluminescence in GaN-based transistors

The nature of hot electron electroluminescence (EL) in AlGaN/GaN high electron mobility transistors is studied and attributed to Bremsstrahlung. The spectral distribution has been corrected, for the first time, for interference effects due to the multilayered device structure, and this was shown to be crucial for the correct interpretation of the data, avoiding artefacts in the spectrum and misinterpretation of the results. An analytical expression for the spectral distribution of emitted light is derived assuming Bremsstrahlung as the only origin and compared to the simplified exponential model for the high energy tail commonly used for electron temperature extraction: the electron temperature obtained results about 20% lower compared to the approximated exponential model. Comparison of EL intensity for devices from different wafers illustrated the dependence of EL intensity on the material quality. The polarization of electroluminescence also confirms Bremsstrahlung as the dominant origin of the light emitted, ruling out other possible main mechanisms.

Integration of Carbon Nanotubes in Silicon Strip and Slot Waveguide Micro-Ring Resonators

Silicon photonics has emerged as a very promising technology platform for the implementation of high-performance, low-cost, ultra-compact circuits that can monolithically cointegrate electronic, opto-electronic and optic functionalities. However, Si neither has efficient light emission or detection in the telecom wavelength range, nor exhibits efficient electro-optic Pockels effect, hindering the implementation of integrated active devices like sources, detectors, or modulators. Current approaches relay on different materials to provide active functionalities in Si photonics, resulting in highly complex integration schemes that compromise cost-effectiveness. Semiconducting single-wall carbon nanotubes (SWNTs) are capable of emitting and detecting near-infrared light at room temperature and exhibit intrinsically fast electro-optic effects. They have also proven promising uses in micro-electronic devices, making them an ideal material to provide active functionalities in the Si photonic platform. In this work, we propose and experimentally validate the possible use of slot photonic waveguides to improve interaction between SWNTs and Si waveguide modes. Fabricated Si slot micro-ring shown an experimental ~ 60% photo-luminescence improvement compared to previous demonstration based on Si strip waveguide resonators. These results prove the potential of Si slot waveguides for the implementation of efficient SWNT-based Si photonic devices.

Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates

We show that the epitaxial growth of thin layers of AlGaAs on Ge and Si substrates allows to obtain single photon sources by exploiting the sparse and unintentional contamination with acceptors of the AlGaAs. Very bright and sharp single photoluminescence lines are observed in confocal microscopy. These lines behave very much as single excitons in quantum dots, but their implementation is by far much easier, since it does not require 3D nucleation. The photon antibunching is demonstrated by time resolved Hanbury Brown and Twiss measurements.

Highly selective sorting of semiconducting single wall carbon nanotubes exhibiting light emission at telecom wavelengths

Single wall carbon nanotubes (SWNTs) are known for their exceptional electronic properties. However, most of the synthesis methods lead to the production of a mixture of carbon nanotubes having different chiralities associated with metallic (m-SWNTs) and semiconducting (s-SWNTs) characteristics. For application purposes, effective methods for separating these species are highly desired. Here, we report a protocol for achieving a highly selective separation of s-SWNTs that exhibit a fundamental optical transition centered at 1,550 nm. We employ a polymer assisted sorting approach, and the influence of preparation methods on the optical and transport performances of the separated nanotubes is analyzed. As even traces of m-SWNTs can critically affect performances, we aim to produce samples that do not contain any detectable fraction of residual m-SWNTs.

Near-field imaging of single walled carbon nanotubes emitting in the telecom wavelength range

Hybrid systems based on carbon nanotubes emitting in the telecom wavelength range and Si-photonic platforms are promising candidates for developing integrated photonic circuits. Here, we consider semiconducting single walled carbon nanotubes (s-SWNTs) emitting around 1300 nm or 1550 nm wavelength. The nanotubes are deposited on quartz substrate for mapping their photoluminescence in hyperspectral near-field microscopy. This method allows for a sub-wavelength resolution in detecting the spatial distribution of the emission of single s-SWNTs at room temperature. Optical signature delocalized over several micrometers is observed, thus denoting the high quality of the produced carbon nanotubes on a wide range of tube diameters. Noteworthy, the presence of both nanotube bundles and distinct s-SWNT chiralities is uncovered.

Single QD emission from arrays of QD chains obtained by patterning-free method

Abstract The selective growth of InAs quantum dot chains self-ordered at mesoscopic distances on a rippled GaAs(001) substrate is obtained by tuning the direction of the As flux at high temperature and high As/In flux ratio. Microphotoluminescence experiments demonstrate that such isolated quantum dot chains show single quantum dot emission properties.

Integration of carbon nanotubes on silicon photonics resonators

We report on the integration of carbon nanotubes in silicon micro-cavities to develop cost-effective light sources. Strong light coupling from carbon nanotubes was demonstrated into silicon photonics resonators, nanobeam cavities and photonic crystals.

Hybrid integration of carbon nanotubes in silicon photonic structures

Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photoand electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform.

Vectorial Near-Field Imaging of Silicon Heterostructure Cavities in Air-Slot Waveguides

Air-slot photonic nanocavities have many relevant advantages for hybrid integration of external light emitters/absorbers in Si-based optoelectronic devices. Still an experimental major drawback is the difficulty of performing near-field polarization mapping of the photonic modes localized in air-regions. Here, we demonstrate that near-field resonant transmission can achieve high-fidelity vectorial imaging of the electric-field distribution of a nanocavity mode in the challenging case of a silicon heterostructure photonic-crystal cavity realized in an air-slot waveguide where the mode is localized both in air and dielectric regions. We discern and control the in-plane independent polarization components of the electric field of the photonic mode by exploiting the Fano imaging technique. The use of metallic coated aperture near-field probes allows to map the two polarizations with a deep sub-wavelength imaging (

Carbon nanotubes integration on silicon

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