François Ducastelle

Understanding the nucleation mechanisms of carbon nanotubes in catalytic chemical vapor deposition

The nucleation of carbon caps on small nickel clusters is studied using a tight binding model coupled to grand canonical Monte Carlo simulations. It takes place in a well defined carbon chemical potential range, when a critical concentration of surface carbon atoms is reached. The solubility of carbon in the outermost Ni layers, that depends on the initial, crystalline or disordered, state of the catalyst and on the thermodynamic conditions, is therefore a key quantity to control the nucleation.

Tight-binding potential for atomistic simulations of carbon interacting with transition metals: Application to the Ni-C system

We present a tight-binding potential for transition metals, carbon, and transition-metal carbides, which has been optimized through a systematic fitting procedure. A minimal basis, including the s and p electrons of carbon and the d electrons of the transition metal, is used to obtain a transferable tight-binding model of the carbon-carbon, metal-metal, and metal-carbon interactions applicable to binary systems. The Ni-C system is more specifically discussed. The successful validation of the potential for different atomic configurations indicates a good transferability of the model and makes it a good choice for atomistic simulations sampling a large configuration space. This approach appears to be very efficient to describe interactions in systems containing carbon and transition-metal elements. By way of example, we present results concerning the epitaxial growth of graphene sheets on (111) Ni surfaces, as well as the catalytic nucleation of carbon nanotubes.

Importance of carbon solubility and wetting properties of nickel nanoparticles for single wall nanotube growth

Optimized growth of single wall carbon nanotubes requires full knowledge of the actual state of the catalyst nanoparticle and its interface with the tube. Using tight binding based atomistic computer simulations, we calculate carbon adsorption isotherms on nanoparticles of nickel, a typical catalyst, and show that carbon solubility increases for smaller nanoparticles that are either molten or surface molten under experimental conditions. Increasing carbon content favors the dewetting of Ni nanoparticles with respect to sp(2) carbon walls, a necessary property to limit catalyst encapsulation and deactivation. Grand canonical Monte Carlo simulations of the growth of tube embryos show that wetting properties of the nanoparticles, controlled by carbon solubility, are of fundamental importance to enable the growth, shedding new light on the growth mechanisms.

Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy

The excitonic recombinations in hexagonal boron nitride (hBN) are investigated with spatially resolved cathodoluminescence spectroscopy in the UV range. Cathodoluminescence images of an individual hBN crystallite reveals that the 215 nm free excitonic line is quite homogeneously emitted along the crystallite whereas the 220 nm and 227 nm excitonic emissions are located in specific regions of the crystallite. Transmission electron microscopy images show that these regions contain a high density of crystalline defects. This suggests that both the 220 nm and 227 nm emissions are produced by the recombination of excitons bound to structural defects.

Interdependency of Subsurface Carbon Distribution and Graphene–Catalyst Interaction

The dynamics of the graphene–catalyst interaction during chemical vapor deposition are investigated using in situ, time- and depth-resolved X-ray photoelectron spectroscopy, and complementary grand canonical Monte Carlo simulations coupled to a tight-binding model. We thereby reveal the interdependency of the distribution of carbon close to the catalyst surface and the strength of the graphene–catalyst interaction. The strong interaction of epitaxial graphene with Ni(111) causes a depletion of dissolved carbon close to the catalyst surface, which prevents additional layer formation leading to a self-limiting graphene growth behavior for low exposure pressures (10–6–10–3 mbar). A further hydrocarbon pressure increase (to ∼10–1 mbar) leads to weakening of the graphene–Ni(111) interaction accompanied by additional graphene layer formation, mediated by an increased concentration of near-surface dissolved carbon. We show that growth of more weakly adhered, rotated graphene on Ni(111) is linked to an initially higher level of near-surface carbon compared to the case of epitaxial graphene growth. The key implications of these results for graphene growth control and their relevance to carbon nanotube growth are highlighted in the context of existing literature.

Long-range interactions between substitutional nitrogen dopants in graphene: Electronic properties calculations

Being a true two-dimensional crystal, graphene has special properties. In particular, a point-like defect in graphene may have effects in the long range. This peculiarity questions the validity of using a supercell geometry in an attempt to explore the properties of an isolated defect. Still, this approach is often used in ab-initio electronic structure calculations, for instance. How does this approach converge with the size of the supercell is generally not tackled for the obvious reason of keeping the computational load to an affordable level. The present paper addresses the problem of substitutional nitrogen doping of graphene. DFT calculations have been performed for 9x9 and 10x10 supercells. Although these calculations correspond to N concentrations that differ by about 10%, the local densities of states on and around the defects are found to depend significantly on the supercell size. Fitting the DFT results by a tight-binding Hamiltonian makes it possible to explore the effects of a random distribution of the substitutional N atoms, in the case of finite concentrations, and to approach the case of an isolated impurity when the concentration vanishes. The tight-binding Hamiltonian is used to calculate the STM image of graphene around an isolated N atom. STM images are also calculated for graphene doped with 0.5 % concentration of nitrogen. The results are discussed in the light of recent experimental data and the conclusions of the calculations are extended to other point defects in graphene.

Many-body effects in electronic bandgaps of carbon nanotubes measured by scanning tunnelling spectroscopy

Single-walled carbon nanotubes provide an ideal system for studying the properties of one-dimensional (1D) materials, where strong electron-electron interactions are expected. Optical measurements have recently reported the existence of excitons in semiconducting nanotubes, revealing the importance of many-body effects. Surprisingly, pioneering electronic structure calculations and scanning tunnelling spectroscopy (STS) experiments report the same gap values as optical experiments. Here, an experimental STS study of the bandgap of single-walled semiconducting nanotubes, demonstrates a continuous transition from the gap reduced by the screening resulting from the metal substrate to the intrinsic gap dominated by many-body interactions. These results provide a deeper knowledge of many-body interactions in these 1D systems and a better understanding of their electronic properties, which is a prerequisite for any application of nanotubes in the ultimate device miniaturization for molecular electronics, or spintronics.

Charge transfer and electronic doping in nitrogen-doped graphene.

Understanding the modification of the graphene’s electronic structure upon doping is crucial for enlarging its potential applications. We present a study of nitrogen-doped graphene samples on SiC(000) combining angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and spectroscopy and X-ray photoelectron spectroscopy (XPS). The comparison between tunneling and angle-resolved photoelectron spectra reveals the spatial inhomogeneity of the Dirac energy shift and that a phonon correction has to be applied to the tunneling measurements. XPS data demonstrate the dependence of the N 1s binding energy of graphitic nitrogen on the nitrogen concentration. The measure of the Dirac energy for different nitrogen concentrations reveals that the ratio usually computed between the excess charge brought by the dopants and the dopants’ concentration depends on the latter. This is supported by a tight-binding model considering different values for the potentials on the nitrogen site and on its first neighbors.

Electronic Interaction between Nitrogen Atoms in Doped Graphene

Many potential applications of graphene require either the possibility of tuning its electronic structure or the addition of reactive sites on its chemically inert basal plane. Among the various strategies proposed to reach these objectives, nitrogen doping, i.e., the incorporation of nitrogen atoms in the carbon lattice, leads in most cases to a globally n-doped material and to the presence of various types of point defects. In this context, the interactions between chemical dopants in graphene have important consequences on the electronic properties of the systems and cannot be neglected when interpreting spectroscopic data or setting up devices. In this report, the structural and electronic properties of complex doping sites in nitrogen-doped graphene have been investigated by means of scanning tunneling microscopy and spectroscopy, supported by density functional theory and tight-binding calculations. In particular, based on combined experimental and simulation works, we have systematically studied the electronic fingerprints of complex doping configurations made of pairs of substitutional nitrogen atoms. Localized bonding states are observed between the Dirac point and the Fermi level in contrast with the unoccupied state associated with single substitutional N atoms. For pyridinic nitrogen sites (i.e., the combination of N atoms with vacancies), a resonant state is observed close to the Dirac energy. This insight into the modifications of electronic structure induced by nitrogen doping in graphene provides us with a fair understanding of complex doping configurations in graphene, as it appears in real samples.

Excitonic recombinations in hBN: from bulk to exfoliated layers

Hexagonal boron nitride (h-BN) and graphite are structurally similar but with very different properties. Their combination in graphene-based devices is now of intense research focus, and it becomes particularly important to evaluate the role played by crystalline defects on their properties. In this paper, the cathodoluminescence (CL) properties of hexagonal boron nitride crystallites are reported and compared to those of nanosheets mechanically exfoliated from them. First, the link between the presence of structural defects and the recombination intensity of trapped excitons, the so-called D series, is confirmed. Low defective h-BN regions are further evidenced by CL spectral mapping (hyperspectral imaging), allowing us to observe new features in the near-band-edge region, tentatively attributed to phonon replicas of exciton recombinations. Second, the h-BN thickness was reduced down to six atomic layers, using mechanical exfoliation, as evidenced by atomic force microscopy. Even at these low thicknesses, the luminescence remains intense and exciton recombination energies are not strongly modified with respect to the bulk, as expected from theoretical calculations, indicating extremely compact excitons in h-BN.