Francois Lelarge

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 °C and a thermo-optic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz.

High performance mode locking characteristics of single section quantum dash lasers.

Mode locking features of single section quantum dash based lasers are investigated. Particular interest is given to the static spectral phase profile determining the shape of the mode locked pulses. The phase profile dependence on cavity length and injection current is experimentally evaluated, demonstrating the possibility of efficiently using the wide spectral bandwidth exhibited by these quantum dash structures for the generation of high peak power sub-picosecond pulses with low radio frequency linewidths.

Heterogeneously integrated III-V/silicon distributed feedback lasers

Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.

146-GHz millimeter-wave radio-over-fiber photonic wireless transmission system

The broadband penetration and continuing growth of Internet traffic among residential and business customers are driving the migration of todays end users network access from cable to optical fiber and superbroadband wireless systems The integration of optical and wireless systems operating at much higher carrier frequencies in the millimeter-wave (mm-wave) range is considered to be one of the most promising solutions for increasing the existing capacity and mobility, as well as decreasing the costs in next-generation optical access networks. In this paper, several key enabling technologies for very high throughput wireless-over-fiber networks are reviewed, including photonic mm-wave generation based on external modulation or nonlinear effects, spectrum-efficient multicarrier orthogonal frequency-division multiplexing and single-carrier multilevel signal modulation. We also demonstrated some applications in wireless-over-fiber trials using these enabling techniques. The results show that the integrated systems are practical solutions to offer very high throughput wireless to end users in optically enabled wireless access networks.We report the experimental implementation of a wireless transmission system with a 146-GHz carrier frequency which is generated by optical heterodyning the two modes from a monolithically integrated quantum dash dual-DFB source. The monolithic structure of the device and the inherent low noise characteristics of quantum dash gain material allow us to demonstrate the transmission of a 1 Gbps ON-OFF keyed data signal with the two wavelengths in a free-running state at 146-GHz carrier wave frequency. The tuning range of the device fully covers the W-band (75 - 110 GHz) and the F-band (90 - 140 GHz).

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Monolithic dual wavelength DFB lasers for narrow linewidth heterodyne beat-note generation

We have developed a dual wavelength DFB laser for the generation of a widely tunable microwave signal. In order to obtain a narrow linewidth of the generated signal, we have focused the development of the source on the reduction of the linewidth of each generated wavelengths. The best results were obtained with a device using 2500 µm long DFB sections that generated linewidths narrower than 300 kHz. Beating the two wavelengths from this chip on a photodetector resulted in a beat note having a linewidth of 600 kHz. This microwave signal could be tuned from 3 to 20 GHz with a linewidth kept below 1 MHz.

Low noise performance of passively mode locked quantum-dash-based lasers under external optical feedback

We report on a systematic investigation of the effect of external optical feedback on 17 GHz passively mode-locked two-section lasers based on InAs/InP quantum dashes emitting at 1.58 μm. Narrowing of mode-beating linewidth down to a record value of ∼500 Hz is demonstrated over a large operating range.

Multi-Data-Rate System Performance of a 40-GHz All-Optical Clock Recovery Based on a Quantum-Dot Fabry–PÉrot Laser

Bit-error-rate assessment of a multi-rate all-optical clock recovery (OCR) based on a narrow linewidth mode-locked quantum-dot (QD) Fabry-Perot laser is presented in this letter. OCR has been achieved without external feedback. We use a QD Fabry-Perot semiconductor laser designed for 40-GHz clock extraction. We then present OCR performance with 40-, 80-, and 160-Gb/s input data signal and demonstrate that clock recovery has been obtained thanks to subharmonic locking process. Results are presented through penalty measurement using an original characterization based on recovered clock remodulation with electrical data from the transmitter. This technique allows us to evaluate the quality of the recovered clock.

Structural and electrooptical characteristics of quantum dots emitting at 1.3 /spl mu/m on gallium arsenide

We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 /spl mu/m. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 /spl mu/m is obtained by embedding the dots in an InGaAs layer. Depending on the growth structure, dot densities of 1-6/spl times/10/sup 10/ cm/sup -2/ are obtained. High dot densities are associated with large inhomogeneous broadenings, while narrow photoluminescence (PL) linewidths are obtained in low-density samples. From time-resolved PL experiments, a long carrier lifetime of /spl ap/1.8 ns is measured at room temperature, which confirms the excellent structural quality. A fast PL rise (/spl tau//sub rise/=10/spl plusmn/2 ps) is observed at all temperatures, indicating the potential for high-speed modulation. High-efficiency light-emitting diodes (LEDs) based on these dots are demonstrated, with external quantum efficiency of 1% at room temperature. This corresponds to an estimated 13% radiative efficiency. Electroluminescence spectra under high injection allow us to determine the transition energies of excited states in the dots and bidimensional states in the adjacent InGaAs quantum well.

High-speed photodiodes for InP-based photonic integrated circuits

We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).