Francois Y. Colomb

2 and 4 watt Ka-band GaAs PHEMT power amplifier MMICs

The design and performance of power amplifiers for Ka-band applications is presented. A three-stage amplifier demonstrated 22 dB small signal gain from 26.5 GHz to 31.5 GHz and saturated output power of 4W with 28% power added efficiency from 28 GHz to 31 GHz. Record power density of 670 mW per mm of device output periphery was achieved. The amplifiers were fabricated on a selective double-recess 0.2 /spl mu/m GaAs power pHEMT process.

A 3-Watt Q-Band GaAs pHEMT Power Amplifier MMIC For High Temperature Operation

A three-stage Q-band pHEMT power amplifier for 42-46GHz operation has been designed and built. The conservative stage peripheries of 2.64:5.28:7.68mm were chosen to ensure high temperature operation. Although designed for a nominal bias of 5.5V and 170mA/mm, the amplifier operates with biases of 2-6V and 65-190mA/mm. Record powers for this frequency range have been obtained. Biased at 6V and 170mA/mm the amplifier provided 4W of power at 20% efficiency over 42.5-43GHz at 30degC, and an average of 3W with 17% efficiency over 43.5-45.5GHz at 90degC. At 5.5V and 128mA/mm an average power of 3W with 20% efficiency was obtained over 43.5-45.5GHz at room temperature

Characterization of metal on elastomer vertical interconnections

A metal on elastomer vertical interconnection for multilayer microwave modules is presented. Measured insertion loss is 0.5 dB at 6 GHz. Layer to layer lateral misalignment of the substrates by as much as /spl plusmn/0.006 inch causes only a 0.1 dB degradation in performance. A two-tier design approach is presented for first analyzing the vertical strips as a uniform multiconductor transmission line and then for including the interactions of all discontinuities in a 3D simulation using the finite element method.

Multilevel Vertical Interconnection Technology

Multilevel vertical interconnections are playing an increasingly important role in radar and communication circuits. In advanced systems, front ends with high circuit density and thus small footprint area are obtained using multilevel circuits. This approach potentially lends itself to a high degree of component integration and reduced cost. Additionally, the small overall depth of the front end allows minimal cost of installation and attractive esthetics. These factors could enable a multitude of new applications particularly in the commercial market. An example of this technology is a flat panel phased array which is manufactured by stacking thin panels for the distribution circuit, the T/R modules, and the patch antenna elements on top of each other.