Frank Klotz

Generic IC EMC Test Specification

A well defined IC test setup and IC configuration is mandatory to provide EMC-related test reports of different vendors comparable and allows an objective product selection for end-users. Based on well-established international standards, the “BISS” (from “Bosch/Infineon/Siemens Specification”) working group maintains the “Generic IC EMC Test Specification”, which serves as a reference manual on how to setup repeatable electromagnetic, pulse and system-ESD tests, resulting in comparable test reports. Conducted and radiated emission and immunity tests are already well established; pulse immunity and ESD robustness measurements based on system-level tests are expected to be released in the second edition of the “Generic IC EMC Test Specification” during the first half of 2012. The paper provides an overview of this test specification and its practical application.

Application of GTEM cells for IC EMC testing

A test object for investigation and comparison of different IC EMC test facilities (muTEM and GTEM cell) has been designed. The test board allows the characterization of the test facility directly at the position of the EUT. Based on this test object the DUT orientation and test facility requirements are investigated theoretically and experimentally. The comparison of muTEM cells and a GTEM cell showed a good agreement of the measurement results up to the frequency limitations of the muTEM cells.

On chip filtering versus layout techniques to reduce RF coupled disturbances

This paper investigates techniques to improve the performance of analog circuits and reduce their sensitivity to coupled electromagnetic interferences (EMIs). A bandgap has been chosen for these analyses. RF noise is injected into an aggressor line couples and causes circuit functional failure. The efficiency of design techniques as an increase of bias currents, different filters and layout techniques as an increase of distances, different shieldings were compared. Performance improvements of the circuit and required additional chip size for the modifications were considered. The investigations have been done by measurements. Therefore various circuits were designed and manufactured. A model of the bandgap was derived that predicts correctly the susceptibility of the circuit.

Improving the immunity of smart power integrated circuits by controlling RF substrate coupling

This paper discusses RF substrate coupling in smart power integrated circuits. Analyses have been accomplished by measurements on wafer level. For this purpose test structures have been designed using a BCD technology (Bipolar, CMOS (complementary MOS) and DMOS (double diffused MOS)) for automotive applications. The determining parameters to RF substrate coupling have been evaluated by measuring structures with two transistors. The findings are applied to a typical smart power integrated circuit. It results in controlling RF substrate coupling and a circuit with a high degree of immunity against electromagnetic interference (EMI). The paper closes with appropriate layout recommendations.

EMC test specification for integrated circuits

This paper presents a general EMC test specification for integrated circuits that is based on the internationally standardised test methods set out in IEC 61967 and IEC 62132 and specifies a generic procedure enabling a comparative characterisation of the EMC behaviour of different IC types. The specification contains general information about the test methods used, defines various IC function modules, pin types, and test and measurement networks, and provides a guide to selecting the pins to be tested, operating modes and limit values.

Error of emission measurement of ICs due to imperfect termination of TEM Cell

Test PCB was used for generalized emission measurement on IC level using GTEM cell. Measurements result show an oscillation which is explained as an influence of imperfect absorbers of GTEM cell. The maximum error due to imperfect absorbers of emission measurement for ICs is regarded and given as a function of the reflection coefficient of absorbers (or terminations of TEM cells in general).