Frank T. J. Smith

Metalorganic chemical vapor deposition of oriented ZnO films over large areas

A metalorganic chemical vapor deposition process for preparing c‐axis‐oriented ZnO films in a simple system of the type commercially available for SiO2 deposition is described. The resulting layers are highly uniform in thickness and adhere to a variety of substrates. Film properties and structure are described briefly.

ZINC DIFFUSION INTO GAAS, AL0.2GA0.8AS, AND GAAS0.6P0.4 FROM MOCVD (ZNO)X(SIO2)1-X FILMS

A simple and reproducible process for the open‐tube diffusion of zinc from (ZnO)x(SiO2)1−x source films into GaAs, Al0.2Ga0.8As and GaAs0.6P0.4 is reported. (ZnO)x(SiO2)1−x films were deposited onto compound semiconductor substrates by metalorganic chemical vapor deposition. A capping layer of SiO2 was deposited on top of the source films. The diffusions were performed in flowing nitrogen at 650 °C. Diffusion depths from 0.2 μm to several micrometers were readily achieved. The diffusion front in n‐type substrates is abrupt and the average hole concentration for diffused layers in GaAs is approximately 8 × 1019/cm3. The dependence of the diffusion depth on the source film composition (x=0.04–x=1.00) is presented. The dependence of the diffusion depth on the source film thickness and the SiO2 cap layer thickness is also reported.