Frédéric Mazen
Commissariat à l'énergie atomique et aux énergies alternatives
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Publication
Featured researches published by Frédéric Mazen.
Journal of Applied Physics | 2007
Luciana Capello; François Rieutord; A. Tauzin; Frédéric Mazen
We used grazing-incidence small angle x-ray scattering to investigate properties of hydrogen implantation-induced platelets and cavities formed in silicon as a function of the implantation and annealing parameters. Density, orientation, and size (thickness and diameter) of these buried objects can be extracted from quantitative x-ray scattering intensity measurements, in a nondestructive manner. Detailed balance of hydrogen-induced defect evolution can be made with such data. Different defect populations result from different implantation temperatures and a low limit H dose is found for {111} platelets formation.
Journal of Applied Physics | 2013
Jean-Daniel Penot; Damien Massy; François Rieutord; Frédéric Mazen; Shay Reboh; Florence Madeira; Luciana Capello; Didier Landru; Oleg Kononchuk
The development of microcracks in hydrogen-implanted silicon has been studied up to the final split using optical microscopy and mass spectroscopy. It is shown that the amount of gas released when splitting the material is proportional to the surface area of microcracks. This observation is interpreted as a signature of a vertical collection of the available gas. The development of microcracks is modeled taking into account both diffusion and mechanical crack propagation. The model reproduces many experimental observations such as the dependence of split time upon temperature and implanted dose.
Journal of Applied Physics | 2013
François Rieutord; Frédéric Mazen; Shay Reboh; Jean-Daniel Penot; L. Bilteanu; J. P. Crocombette; V. Vales; V. Holy; Luciana Capello
Hydrogen implanted silicon has been studied using high resolution X-ray scattering. Strain induced by implantation has been measured as a function of implantation dose. The dependence of strain with implanted dose shows different regimes starting from linear to quadratic and saturation. The observed strain is consistent with ab-initio and elasticity calculations. Strain rate changes can be associated to the predominant location of hydrogen in bond center location.
Applied Physics Letters | 2013
Shay Reboh; François Rieutord; L. Vignoud; Frédéric Mazen; N. Cherkashin; M. Zussy; Didier Landru; C. Deguet
In contrast to previous reports, where the modification of elastic constants of semiconductors irradiated with heavy ions was related to crystalline to amorphous transition, here we show that hydrogen implantation causes a dramatic modification of the shear modulus of Si at relatively low levels of crystalline damage. To study the system, we developed an alternative and rather general method to determine the shear modulus of the buried implanted layer. We use elasticity theory to link two simple measurements: (i) the wafer curvature to extract the in-plane stresses and (ii) x-ray diffraction to determine strains in the implanted layer.
2014 20th International Conference on Ion Implantation Technology (IIT) | 2014
Marianne Coig; Frédéric Milesi; N. Payen; S. Reboh; Frédéric Mazen; Adeline Lanterne; J. Le Perchec; Samuel Gall; Yannick Veschetti
The doping of n-type silicon solar cells was investigated using two ion implantation techniques: beam line and plasma immersion. Initially we studied the effects of beam line ion implantation, where the dopants were activated by two different annealing routines. The first one used a single annealing to activate both B implanted emitter and P implanted back surface field (BSF), while the second one used two different annealing to separately activate the dopants. Good yield was reached with a record cell of 20.33% efficiency. Secondly, we investigated the doping by plasma immersion ion implantation with final objective of fabricate a solar cell fully doped by plasma.
Applied Physics Letters | 2015
D. Massy; Frédéric Mazen; S. Tardif; J. D. Penot; J. Ragani; F. Madeira; Didier Landru; Oleg Kononchuk; François Rieutord
Crack propagation in implanted silicon for thin layer transfer is experimentally studied. The crack propagation velocity as a function of split temperature is measured using a designed optical setup. Interferometric measurement of the gap opening is performed dynamically and shows an oscillatory crack “wake” with a typical wavelength in the centimetre range. The dynamics of this motion is modelled using beam elasticity and thermodynamics. The modelling demonstrates the key role of external atmospheric pressure during crack propagation. A quantification of the amount of gas trapped inside pre-existing microcracks and released during the fracture is made possible, with results consistent with previous studies.
Materials Science in Semiconductor Processing | 2006
Takeshi Akatsu; Chrystel Deguet; Loic Sanchez; F. Allibert; D. Rouchon; Thomas Signamarcheix; Claire Richtarch; Alice Boussagol; Virginie Loup; Frédéric Mazen; J.M. Hartmann; Yves Campidelli; Laurent Clavelier; Fabrice Letertre; N. Kernevez; Carlos Mazure
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms | 2012
H. Moriceau; Frédéric Mazen; Carole Braley; François Rieutord; Aurélie Tauzin; Chrystel Deguet
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms | 2012
Carole Braley; Frédéric Mazen; Aurélie Tauzin; François Rieutord; Chrystel Deguet; E. Ntsoenzok
Electrochemical and Solid State Letters | 2010
Névine Rochat; Aurélie Tauzin; Frédéric Mazen; Laurent Clavelier