Frédéric Piéchon

New magnetic field dependence of Landau levels in a graphenelike structure.

We consider a tight-binding model on the honeycomb lattice in a magnetic field. For special values of the hopping integrals, the dispersion relation is linear in one direction and quadratic in the other. We find that, in this case, the energy of the Landau levels varies with the field B as epsilon(n)(B) ~ [(n+gamma)B](2/3). This result is obtained from the low-field study of the tight-binding spectrum on the honeycomb lattice in a magnetic field (Hofstadter spectrum) as well as from a calculation in the continuum approximation at low field. The latter links the new spectrum to the one of a modified quartic oscillator. The obtained value gamma=1/2 is found to result from the cancellation of a Berry phase.

Spin- and valley-dependent magneto-optical properties of MoS2

We investigate the behavior of low-energy electrons in two-dimensional molybdenum disulfide when submitted to an external magnetic field. Highly degenerate Landau levels form in the material, between which light-induced excitations are possible. The dependence of excitations on light polarization and energy is explicitly determined, and it is shown that it is possible to induce valley and spin polarization, i.e. to excite electrons of selected valley and spin. Whereas the effective low-energy model in terms of massive Dirac fermions yields dipole-type selection rules, higher-order band corrections allow for the observation of additional transitions. Furthermore, inter-Landau-level transitions involving the n=0 levels provide a reliable method for an experimental measurement of the gap and the spin-orbit gap of molybdenum disulfide.

Geometrical engineering of a two-band Chern insulator in two dimensions with arbitrary topological index

Two-dimensional 2-bands insulators breaking time reversal symmetry can present topological phases indexed by a topological invariant called the Chern number. Here we first propose an efficient procedure to determine this topological index. This tool allows in principle to conceive 2-bands Hamiltonians with arbitrary Chern numbers. We apply our methodology to gradually construct a quantum anomalous Hall insulator (Chern insulator) which can be tuned through five topological phases indexed by the Chern numbers {0,+/-1,+/-2}. On a cylindrical finite geometry, such insulator can therefore sustain up to two edge states which we characterize analytically. From this non-trivial Chern insulator and its time reversed copy, we build a quantum spin Hall insulator and show how the phases with a +/-2 Chern index yield trivial Z2 insulating phases.

Geometric orbital susceptibility: Quantum metric without Berry curvature

The orbital magnetic susceptibility of an electron gas in a periodic potential depends not only on the zero field energy spectrum but also on the geometric structure of cell-periodic Bloch states which encodes interband effects. In addition to the Berry curvature, we explicitly relate the orbital susceptibility of two-band models to a quantum metric tensor defining a distance in Hilbert space. Within a simple tight-binding model allowing for a tunable Bloch geometry, we show that interband effects are essential even in the absence of Berry curvature. We also show that for a flat band model, the quantum metric gives rise to a very strong orbital paramagnetism.

Orbital magnetism in coupled-bands models

We develop a gauge-independent perturbation theory for the grand potential of itinerant electrons in two-dimensional tight-binding models in the presence of a perpendicular magnetic field. At first order in the field, we recover the result of the so-called {\it modern theory of orbital magnetization} and, at second order, deduce a new general formula for the orbital susceptibility. In the special case of two coupled bands, we relate the susceptibility to geometrical quantities such as the Berry curvature. Our results are applied to several two-band -- either gapless or gapped -- systems. We point out some surprising features in the orbital susceptibility -- such as in-gap diamagnetism or parabolic band edge paramagnetism -- coming from interband coupling. From that we draw general conclusions on the orbital magnetism of itinerant electrons in multi-band tight-binding models.

From Dia- to Paramagnetic Orbital Susceptibility of Massless Fermions

We study the orbital susceptibility of multiband systems with a pair of Dirac points interpolating between honeycomb and dice lattices. Despite having the same zero-field energy spectrum, these different systems exhibit spectacular differences in their orbital magnetic response, ranging from dia- to paramagnetism at Dirac points. We show that this striking behavior is related to a topological Berry phase varying continuously from π (graphene) to 0 (dice). The latter strongly constrains interband effects, resulting in an unusual dependence of the magnetic response also at finite doping.

Energy-level statistics of electrons in a two-dimensional quasicrystal.

A numerical study is made of the spectra of a tight-binding hamiltonian on square approximants of the quasiperiodic octagonal tiling. Tilings may be pure or random, with different degrees of phason disorder considered. The level statistics for the randomized tilings follow the predictions of random matrix theory, while for the perfect tilings a new type of level statistics is found. In this case, the first-, second- level spacing distributions are well described by lognormal laws with power law tails for large spacing. In addition, level spacing properties being related to properties of the density of states, the latter quantity is studied and the multifractal character of the spectral measure is exhibited.

Chemical potential asymmetry and quantum oscillations in insulators

We present a theory of quantum oscillations in insulators that are particle-hole symmetric and non-topological but with arbitrary band dispersion, at both zero and non-zero temperature. At temperatures

Fractal dimensions of wave functions and local spectral measures on the Fibonacci chain

T

Statistical mechanics approach to the electric polarization and dielectric constant of band insulators

less than or comparable to the gap, the dependence of oscillations on