Fu-Hsiang Ko

Real-Time and Label-Free Detection of the Prostate-Specific Antigen in Human Serum by a Polycrystalline Silicon Nanowire Field-Effect Transistor Biosensor

In this research, we used a polycrystalline silicon nanowire field-effect transistor (poly-Si NWFET) as a biosensor that employs the sidewall spacer technique instead of an expensive electron beam lithography method. When compared with commercial semiconductor processes, the sidewall spacer technique has the advantages of simplicity and low cost. In this study, we employed a novel poly-Si NWFET device for real-time, label-free, and ultrahigh-sensitivity detection of prostate-specific antigen (PSA) in human serum. Since serum proteome is very complex containing high levels of salts and other interfering compounds, we hereby developed a standard operating procedure for real-sample pretreatment to keep a proper pH value and ionic strength of the desalted serum and also utilized Tween 20 to serve as the passivation agent by surface modification on the NWFET to reduce nonspecific binding for medical diagnostic applications. We first modified 3-aminopropyltriethoxysilane on the surface of a poly-Si nanowire device followed by glutaraldehyde functionalization, and the PSA antibodies were immobilized on the aldehyde terminal. While PSA was prepared in the buffers to maintain an appropriate pH value and ionic strength, the results indicated that the sensor could detect trace PSA at less than 5 fg/mL in a microfluidic channel. The novel poly-Si NWFET is developed as a diagnostic platform for monitoring prostate cancer and predicting the risk of early biochemical relapse.

Novel pyrene containing monomeric and dimeric supramolecular AIEE active nano-probes utilized in selective “off–on” trivalent metal and highly acidic pH sensing with live cell applications

Two novel pyrene containing monomeric and dimeric Schiff base derivatives PCS1 and PCS2 have been synthesized via one-pot reaction and their nano-J-type aggregation induced emission enhancement (AIEE) was well demonstrated using UV-Vis/PL, transmission electron microscopy (TEM), dynamic light scattering (DLS), time resolved photoluminescence (TRPL), and live cell imaging studies. In contrast to PCS2, PCS1 in CH3CN exhibits fluorescence “off–on” sensor selectivity towards transition trivalent metal ions (Fe3+, Cr3+ and Al3+) among other metals, via PET inhibition with excimer PCS1–PCS1* formation. The 2 : 1 stoichiometry of PCS1⋯M3+ (M = Fe/Cr/Al) sensor complexes was calculated from Jobs plots based on their PL titrations. In addition, the binding sites of PCS1⋯M3+ sensor complexes were well recognised from the 1H NMR titrations and supported by ESI(+ve) mass and FTIR analysis. Additionally, fluorescence reversibilities of PCS1⋯M3+ were observed via consequent addition of M3+ ions and PMDTA, respectively. Furthermore, the detection limits (LODs) and the association constant (Ka) values of PCS1⋯M3+ complexes were calculated using standard deviation and linear fittings. Likewise, quantum yield (Φ) measurements, TEM analysis, determination of the effect of pH, density functional theory (DFT) and time resolved photoluminescence (TRPL) studies were performed for the PCS1⋯M3+ sensor complexes. More importantly, confocal fluorescence microscopy imaging of Raw264.7 cells showed that PCS1 could be used as an effective fluorescent probe for detecting transition trivalent metal ions (Fe3+, Cr3+, and Al3+) in living cells. Impressively, both PCS1 and PCS2 showed “off–on” sensing at highly acidic pH values (1–3) with live cell applications.

Plasma-made silicon nanograss and related nanostructures

Plasma-made nanostructures show outstanding potential for applications in nanotechnology. This paper provides a concise overview on the progress of plasma-based synthesis and applications of silicon nanograss and related nanostructures. The materials described here include black silicon, Si nanotips produced using a self-masking technique as well as self-organized silicon nanocones and nanograss. The distinctive features of the Si nanograss, two-tier hierarchical and tilted nanograss structures are discussed. Specific applications based on the unique features of the silicon nanograss are also presented.

Ultralow Reflection from a-Si Nanograss/Si Nanofrustum Double Layers

A double-layer nanostructure comprising amorphous Si nanograss on top of Si nanofrustums (NFs) with a total height of 680 nm exhibits ultralow reflection. Almost near-unity absorption and near-zero reflectance result in this layered nanostructure, over a broad range of wavelengths and a wide range of angles of incidence, due to the low packing density of a-Si and the smooth transition of the refractive index from the air to the Si substrate across both the nanograss and NF layers.

Novel Chemical Route to Prepare a New Polymer Blend Gate Dielectric for Flexible Low-Voltage Organic Thin-Film Transistor

An organic-organic blend thin film has been synthesized through the solution deposition of a triblock copolymer (Pluronic P123, EO20-PO70-EO20) and polystyrene (PS), which is called P123-PS for the blend film whose precursor solution was obtained with organic additives. In addition to having excellent insulating properties, these materials have satisfied other stringent requirements for an optimal flexible device: low-temperature fabrication, nontoxic, surface free of pinhole defect, compatibility with organic semiconductors, and mechanical flexibility. Atomic force microscope measurements revealed that the optimized P123-PS blend film was uniform, crack-free, and highly resistant to moisture absorption on polyimide (PI) substrate. The film was well-adhered to the flexible Au/Cr/PI substrate for device application as a stable insulator, which was likely due to the strong molecular assembly that includes both hydrophilic and hydrophobic effects from the high molecular weights. The contact angle measurements for the P123-PS surface indicated that the system had a good hydrophobic surface with a total surface free energy of approximately 19.6 mJ m(-2). The dielectric properties of P123-PS were characterized in a cross-linked metal-insulator-metal structured device on the PI substrate by leakage current, capacitance, and dielectric constant measurements. The P123-PS film showed an average low leakage current density value of approximately 10(-10) A cm(-2) at 5-10 MV cm(-1) and large capacitance of 88.2 nF cm(-2) at 1 MHz, and the calculated dielectric constant was 2.7. In addition, we demonstrated an organic thin-film transistor (OTFT) device on a flexible PI substrate using the P123-PS as the gate dielectric layer and pentacene as the channel layer. The OTFT showed good saturation mobility (0.16 cm(2) V(-1) s(-1)) and an on-to-off current ratio of 5 × 10(5). The OTFT should operate under bending conditions; therefore flexibility tests for two types of bending modes (tensile and compressive) were also performed successfully.

Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications

We report a simple approach to fabricate an organic–inorganic hybrid gate insulator based n-type thin-film transistor (TFT) on a plastic polyimide (PI) sheet at room temperature using an appropriate composition of commercially available polymers and block copolymer surfactant. The composite material film namely; polystyrene-block-poly(methylmethacrylate) (PS-b-PMMA) is readily deposited as a gate dielectric with zinc oxide (ZnO) as a semiconductor layer. This new dielectric material film exhibits high surface energy, high air stability, very low leakage current density and better dielectric constant as compared to the conventional polymer dielectrics. This plastic ZnO–TFT combines the advantages of a high-mobility transparent inorganic semiconductor with an ultrathin high-capacitance and low-leakage PS-b-PMMA composite gate dielectric. Fourier transform infrared (FT-IR) spectrum analysis is used for the PS-b-PMMA film to confirm the presence of functional components in this composite material film. The contact angle measurements for three test liquids (e.g., distilled water, ethylene glycol and diiodomethane) reveal that the composite dielectric materials film is nearly hydrophobic and the calculated surface energy is 35.05 mJ m−2. The resulting TFT exhibits excellent operating characteristics at VDS = 10 V with a drain–source current on/off modulation ratio (Ion/Ioff) of 3.12 × 106 and a carrier mobility of 2.48 cm2 V−1 s−1. Moreover in the bending mode and in a normal environment, the device remained undistorted and shows better reliability and performance, while the thickness of PS-b-PMMA is about 28 nm. The results have suggested a new and easy approach for achieving transparent and functionally bendable optoelectronics devices.

Controllable Ink-Jet Printing Technique on Various Channel Width Designs toward Zinc Oxide-Based Thin Film Transistor

Ink-jet printed (IJP) thin-film transistor (TFT) electronics employing solution processed materials is considered to be the key technique to achieve mask-less, low-cost, large-area, and low temperature fabrication systems. We propose an approach for a direct printing highly transparent conducting oxide material of zinc oxide (ZnO) which the use of semiconductor layer with different transistor channel widths without any photolithography process defined. In this work, we describe the ink-jet printing ZnO TFT with three-types channel widths, and electrical characteristics with low voltage operation, high performance of switch on/off state and low temperature fabrication (200~300°C). These printed TFT thus represent an uniquely attractive path for realizing high flexibility printed electronics.