Fujian Zong

Structural properties and photoluminescence of zinc nitride nanowires

Zinc nitride nanowires can be synthesized by nitridation reaction of zinc powder with ammonia gas in 500ml∕min at the nitridation temperature of 600 °C for 120 min. Studies by using x-ray diffraction indicate that zinc nitride nanowires are cubic in structure with the lattice constant a=0.9788nm. Observations by using scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy show that zinc nitride is of nanowire structure. Typical room temperature photoluminescence spectrum of zinc nitride nanowires exhibits an ultraviolet emission peak at 385 nm (3.22 eV) and a blue emission band centered at 450 nm (2.76 eV).

Large scale fluorine doped textured transparent conducting SnO2 films deposited by atmospheric pressure chemical vapour deposition

Abstract Large scale (30×30 cm 2 ) transparent conducting F-doped textured SnO 2 films were prepared by atmosphere pressure chemical vapour deposition. Uniformly polycrystalline SnO 2 :F films having a variable preferred orientation were obtained with resistivity as low as 5×10 −4 Ω cm −1 , with carrier concentrations between 3.5×10 20 and 7×10 20 cm −3 and Hall mobilities from 15.7 to 20.1 cm 2 V −1 s −1 . The average transmittance (including diffuse transmittance) is higher than 90% in the wavelength range of the visible spectrum and the maximum infrared reflectance reaches 92% for a film 655 nm thick. Substrate temperature and fluorine flow rate are the main parameters affecting sheet resistance and transmittance of the resulting films. Oxygen flow rate also influences the film quality to some extent.

Large-scale flourine-doped textured transparent conducting SnO2 films deposited by APCVD

Large scale (30 by 30 cm) transparent conducting F-doped textured SnO2 films have been prepared by atmosphere pressure chemical vapor deposition (APCVD). Uniformly polycrystalline SnO2:F films having a variable preferred orientation have been obtained with resistivity as low as 5 multiplied by 10-4 (Omega) cm, with carrier concentrations between 3.5 multiplied by 1020 and 7 multiplied by 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2 V/s. The average transmittance (including diffusion transmittance) is higher than 90% in the wavelength range of the visible spectrum and the maximum infrared reflectance reaches 92% for a film 655 nm thick. Substrate temperature, fluorine flow rate are main parameters affecting sheet resistance and transmittance of the resulting films. Oxygen flow rate also influences the film quality in some extent.