Fumiya Takata

Negative anisotropic magnetoresistance resulting from minority spin transport in NixFe4−xN (x = 1 and 3) epitaxial films

We grew 50 nm-thick NixFe4−xN (x = 1 and 3) epitaxial films on a SrTiO3(001) single-crystal substrate by molecular beam epitaxy and measured their anisotropic magnetoresistance (AMR) ratios rAMR in the temperature range of 5–300 K with current directions set along either NixFe4−xN [100] or [110]. A negative rAMR was obtained up to 200 K or higher. Their magnitude | rAMR | increased with decreasing temperature. From the negative AMR effect and the negative spin-polarization of density of states for NixFe4−xN at the Fermi level, it can be stated that the minority spin transport is dominant in NixFe4−xN, similar to Fe4N and Co3FeN. The rAMR depends on the current direction that arises from the current direction dependence of s-d scattering. In the case of Ni3FeN, the rAMR decreased to nearly zero at 260 K. This temperature agreed well with the Curie temperature determined from the temperature dependence of magnetization. The AMR curves were reproduced well by using both cos2ϕ and cos4ϕ components below 100 K...

Epitaxial growth and magnetic properties of NixFe4-xN (x = 0, 1, 3, and 4) films on SrTiO3(001) substrates

The 20–60 nm-thick epitaxial NixFe4-xN (x = 0, 1, 3, and 4) films were successfully fabricated on SrTiO3(001) single-crystal substrates by alternating the substrate temperature (Tsub), and their crystalline qualities and magnetic properties were investigated. It was found that the crystal orientation and the degree of order of N site were improved with the increase of Tsub for x = 1 and 3. The lattice constant and saturation magnetization decreased as the Ni content increased. This tendency was in good agreement with first-principle calculation. Curie temperature of the Ni3FeN film was estimated to be 266 K from the temperature dependence of magnetization. The Ni4N film was not ferromagnetic but paramagnetic due to its low degree of order of N site.

Electrical detection of magnetic domain wall in Fe4N nanostrip by negative anisotropic magnetoresistance effect

The magnetic structure of the domain wall (DW) of a 30-nm-thick Fe4N epitaxial film with a negative spin polarization of the electrical conductivity is observed by magnetic force microscopy and is well explained by micromagnetic simulation. The Fe4N film is grown by molecular beam epitaxy on a SrTiO3(001) substrate and processed into arc-shaped ferromagnetic nanostrips 0.3 μm wide by electron beam lithography and reactive ion etching with Cl2 and BCl3 plasma. Two electrodes mounted approximately 12 μm apart on the nanostrip register an electrical resistance at 8 K. By changing the direction of an external magnetic field (0.2 T), the presence or absence of a DW positioned in the nanostrip between the two electrodes can be controlled. The resistance is increased by approximately 0.5 Ω when the DW is located between the electrodes, which signifies the negative anisotropic magnetoresistance effect of Fe4N. The electrical detection of the resistance change is an important step toward the electrical detection of current-induced DW motion in Fe4N.