Futoyoshi Kou
Ricoh
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Publication
Featured researches published by Futoyoshi Kou.
Japanese Journal of Applied Physics | 2011
K. Fujiwara; Mikihiko Oogane; Futoyoshi Kou; Daisuke Watanabe; Hiroshi Naganuma; Yasuo Ando
Magnetic tunnel junctions (MTJs) with a CoFeB/Ru/Ni80Fe20 synthetic ferrimagnetic free layer and an MgO barrier layer were fabricated. The effect of the shape and thickness of the free layer on the magnetic field sensor characteristics was systematically investigated. We achieved a high sensitivity of 4.8%/Oe in the MTJ with a 70-nm-thick Ni80Fe20 layer and an aspect ratio of 1.0. Here, sensitivity is defined as TMR/(2Hk), where TMR is tunnel magnetoresistance ratio in the MTJ and Hk is a magnetic anisotropy field of the free layer. Furthermore, we successfully increased the detection field range up to 230 Oe while keeping high sensitivity and linearity.
Archive | 2008
Junichi Azumi; Futoyoshi Kou; Akihiro Fuse
Archive | 2009
Futoyoshi Kou; Akihiro Fuse; Junichi Azumi
Archive | 2003
Futoyoshi Kou
Archive | 2007
Futoyoshi Kou
Archive | 1998
Futoyoshi Kou; Yoshiyuki Kiyosawa
Archive | 2007
Futoyoshi Kou; Akihiro Fuse
Archive | 2008
Junichi Azumi; Futoyoshi Kou; Akihiro Fuse
Archive | 2002
Futoyoshi Kou; Yoshiyuki Kiyosawa
Archive | 2009
Futoyoshi Kou; Akihiro Fuse; Junichi Azumi
