G. A. Meshkov

Magnetoelectric control of domain walls in a ferrite garnet film

A displacement of magnetic domain walls under the effect of an electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) orientation). The displacement of the domain walls changes to the opposite when the electric field changes sign, and it is independent of the direction of magnetization in the domains. The mechanism proposed for explaining the observed phenomenon is based on the inhomogeneous magnetoelectric effect.

Room temperature magnetoelectric control of micromagnetic structure in iron garnet films

The effect of magnetic domain wall motion induced by electric field is observed in epitaxial iron garnet films grown on (210) and (110) gadolinium-gallium garnet substrates. The displacement of the domain wall changes to the opposite at the reversal of electric field polarity, and it is independent of the magnetic polarity of the domains. Dynamic observation of the domain wall motion in 400 V electric pulses gives the domain wall velocity of about 50 m/s. The same velocity is achieved in a magnetic field pulse of about 50 Oe. This type of magnetoelectric effect is implemented in single phase material at room temperature.

Multiferroics: Promising materials for microelectronics, spintronics, and sensor technique

Possible areas of application of magnetoelectric materials and multiferroics in microelectronics, spintronics, and sensor technique are considered. Criteria of practical applicability of such materials are formulated and examples of magnetoelectric materials satisfying these criteria are given.

Electric polarization of magnetic textures: New horizons of micromagnetism

Abstract A common scenario of magnetoelectric coupling in multiferroics is the electric polarization induced by spatially modulated spin structures. It is shown in this paper that the same mechanism works in magnetic dielectrics with inhomogeneous magnetization distribution: the domain walls and magnetic vortexes can be the sources of electric polarization. The electric field driven magnetic domain wall motion is observed in iron garnet films. The electric field induced nucleation of vortex state of magnetic nanodots is theoretically predicted and numerically simulated. From the practical point of view the electric field control of micromagnetic structures suggests a low-power approach for spintronics and magnonics.

On the possibility of the nucleation of magnetic vortices and antivortices in magnetic dielectrics using electric fields

The micromagnetic distribution in a dielectric nanoparticle is theoretically considered. It is shown that the presence of an inhomogeneous magnetoelectric interaction in magnetic dielectrics creates the possibility of nucleation of magnetic vortices and antivortices in them using an electric field. The estimation of the critical voltage necessary for vortex creation in particles of high-temperature multiferroic bismuth ferrite yields a value of ∼100 V.

Electric Field Driven Magnetic Domain Wall Motion in Iron Garnet Films

The room temperature magnetoelectric effect was observed in epitaxial iron garnet films that appeared as magnetic domain wall motion induced by electric field. The films grown on gadolinium-gallium garnet substrates with various crystallographic orientations were examined. The effect was observed in (210) and (110) films and was not observed in (111) films. Dynamic observation of the domain wall motion in 800 kV/cm electric field pulses gave the domain wall velocity in the range 30÷50 m/s. Similar velocity was achieved in magnetic field pulse about 50 Oe.