G. Atmaca

Electron Transport Properties of Two-Dimensional Electron Gas in BexZn1−xO/ZnO Heterostructures

In this study, we have numerically investigated the conduction band structures, the carrier densities and the electron probability densities of pseudomorphic grown BexZn1−xO/ZnO heterostructures using self-consistent solutions of one-dimensional, non linear Schrödinger–Poisson equations. In the calculations, two-dimensional electron gas (2DEG) formations were observed in the studied heterostructures and the effects of layer thickness and Be-mole fraction (x) of BexZn1−xO barrier layer on 2DEG were described. For possible transistor device applications, 10 nm BexZn1−xO barrier layer structure with x = 0.08 has been suggested. For this structure, we examined the variation of electron mobility with temperature using analytical calculations. Because of the polarization-induced low carrier densities, we found that the background impurity scattering has a strong effect on total electron mobility even at room temperature.

Power-loss mechanisms in surface passivated AlGaN/AlN/GaN heterojunctions

The surface passivation effect on the power-loss mechanisms in AlGaN/AlN/GaN heterostructures was investigated. The electron temperatures of hot electrons was obtained from the temperature and the applied electric field dependencies of the Hall mobility.