G. Bastard

Quantum vacuum properties of the intersubband cavity polariton field

We present a quantum description of a planar microcavity photon mode strongly coupled to a semiconductor intersubband transition in presence of a two-dimensional electron gas. We show that, in this kind of system, the vacuum Rabi frequency

Calculation of the energy levels in InAsGaAs quantum dots

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Visible photoluminescence from porous silicon: A quantum confinement effect mainly due to holes?

can be a significant fraction of the intersubband transition frequency

Binding energies of excitons and charged excitons in GaAsGa(In)As quantum dots

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Energy levels and alloy scattering in InP‐In (Ga)As heterojunctions

. This regime of ultra-strong light-matter coupling is enhanced for long wavelength transitions, because for a given doping density, effective mass and number of quantum wells, the ratio

Interband Optical Transitions in Semiconductor Quantum Wires: Selection Rules and Absorption Spectra

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Measurements of electric-field-induced energy-level shifts in GaAs single-quantum-wells using electroreflectance

increases as the square root of the intersubband emission wavelength. We characterize the quantum properties of the ground state (a two-mode squeezed vacuum), which can be tuned {\it in-situ} by changing the value of

Role of elastic scattering mechanisms in GaInAs/AlInAs quantum cascade lasers

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Intraband transitions in quantum dot-superlattice heterostructures

, e.g., through an electrostatic gate. We finally point out how the tunability of the polariton quantum vacuum can be exploited to generate correlated photon pairs out of the vacuum via quantum electrodynamics phenomena reminiscent of the dynamic Casimir effect.

Optical evidences of assisted tunneling in a biased double quantum well structure

Abstract We present a detailed effective mass calculation of the energy levels in InAs quantum dots embedded in GaAs. We compare the results of a separable approximate treatment with a more complete numerical approach. A satisfying agreement is found with the available experimental data. Even for dot diameters of the order of 30 nm, we find large distances between consecutive energy levels, which should play an important role in the energy relaxation rates.