G. Beensh-Marchwicka

Effect of the oxygen pressure during sputtering on the properties of thin CuOx films

CuOx films were obtained by d.c. reactive ion sputtering of a copper target in gaseous atmospheres with oxygen contents ranging from 0% to 50%. The phases present in the films were determined by X-ray analysis. Measurements of the electrical conductivity as a function of the temperature T for samples with different phase contents were made in the temperature range 80–400 K, and it was found that the conductivity shows the standard exponential dependence on 1/T for all the Cu2O and Cu2OCuO phases obtained. An activation energy for these samples was estimated.

Structure of thin films prepared by the cosputtering of titanium and aluminium or titanium and silicon

Abstract Structural modifications of thin films prepared by the cosputtering of titanium and aluminum or titanium and silicon in an N 2 Ar atmosphere are reported. The influence of the nitrogen content on the phase composition, microstructure and orientation of the films was analysed. The results obtained were compared with the structural properties of films produced under similar conditions by sputtering single titanium, aluminium and silicon targets.

Preparation of thermosensitive magnetron sputtered thin films

Abstract The formation and properties of silicon, germanium, carbon and carbon–silicon magnetron sputtered thin films are described. The influence of various elements (e.g. B, Au, Sb, V and Ta) on thermosensitive thin film properties have been studied. The dopants were introduced directly from a mosaic circular target surface with separated zones of individual components in radial symmetry. It has been found that the selection of appropriate material compositions and sputtering conditions allow adjustment of the film resistivity ρ, the temperature coefficient of resistance TCR and Seebeck effect Qth.

Structure and morphology of Ge(Au) sputtered films with useful Seebeck effect

Abstract The results of investigations concerning the structural and the thermoelectric properties of Ge(Au) sputtered films under pulsed voltage operation of magnetron are described. The film properties are discussed as a function of doping with gold (2 and 5 at%) and the substrate temperature during deposition (360–1040 K). Almost all as-deposited films were polycrystalline and contained crystallites of both Ge and Au phases. The Seebeck coefficient and the electrical conductivity were observed to increase with increasing substrate temperature during sputtering. In general, depending upon the sputtering conditions, compressive or tensile stresses of the order of − 1.8 × 10 8 Pa to 2.7 × 10 8 Pa were observed in Ge. The tensile stress in Au was observed to increase with increasing substrate temperature. The experimental results are discussed in terms of microstructure changes. The proper deposition conditions for optimizing internal stress, Seebeck coefficient and film resistivity can be obtained.

Resistivity of Si–Ni and Si–Ta layers made by magnetron sputtering method

Abstract Results of investigation of layers composed of Si–Ni and Si–Ta alloys have been presented. The layers were deposited on a glass substrate by magnetron sputtering method. Resistivity of the layers with different content of Ni or Ta was measured versus temperature. The dependence was consistent with percolation theory. Nearly exponential relationship of pre-exponential factor ρ 0 on activation energy E a was obtained.

Thin film heater and thermopile built up using some silicides under thermal test

In the past we demonstrated the applicability of magnetron sputtered films based on Ge-alloy and some metal silicides in the thermal converter construction .These devices made of selected material composition showed the useful output signal up to ambient temperature of 773 K. In this paper the behaviour of thin film heaters made of MoSi2 and thermopiles with using TiSi2 /Ge-alloy couples under long-term test in ambient air at 473 Kfor 200h was described. During thermal test the heaters were loaded periodically with dc power about 100mW to obtain the voltage signal of thermopile. The changes in resistance of MoSi2 heaters versus time were monitored and evaluated. The aim of the present work was to analyse the changes of thermal response as well as the changes in total resistance for a 12-couple pile too .Our investigations showed that observed changes depended on three mechanisms: the diffusion, the recrystallization and oxidation of film components.

Influence of thermal aging on TiNx thin film resistors

Abstract We have examined the dispersion values of thin film resistors of titanium nitride obtained by reactive evaporation of titanium in a nitrogen atmosphere and subjected to thermal aging. We have found that the dependence of relative changes ΔR/R of the resistance on the aging time t is described by the expression ΔR/R = At 1 2 . The mean square deviation of the resistance variations as a function of ΔR/R is a straight line on a log-log plot with a slope of 0.8–1. This has been explained by the dispersion of material constants between the resistors.