G. Erbert

Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers

A novel process for the passivation of mirror facets of Al-free active-region high-power semiconductor diode lasers is presented. Designed for technological simplicity and minimum damage generated within the facet region, it combines laser bar cleaving in air with a two-step process consisting of 1) removal of thermodynamically unstable species and 2) facet sealing with a passivation layer. Impurity removal is achieved by irradiation with beams of atomic hydrogen, while zinc selenide is used as the passivating medium. The effectiveness of the process is demonstrated by operation of 808-nm GaAsP-active ridge-waveguide diode lasers at record optical powers of 500 mW for several thousand hours limited only by bulk degradation.

High-Brightness Quantum Well Tapered Lasers

High-power quantum well lasers with high brightness in the spectral range between 650 nm and 1080 nm will be presented. Improved layer structures with a narrow vertical far-field divergence down to angles of 15deg (full-width at half-maximum) were developed. For these layer structures, optimized tapered lasers were processed to achieve laterally a nearly diffraction-limited beam quality with beam propagation factors smaller than 2. Depending on the emission wavelength, the tapered devices reach an output power up to 12 W and a brightness of 1 GWmiddotcm-2middotsr-1.

Directly diode-pumped holmium fiber lasers.

Sensitizer-free holmium-doped silica and fluoride mid-infrared fiber lasers are pumped using a high-power diode laser operating at 1148 nm. A maximum output power of 162 mW at 2.86 microm was produced at a slope efficiency of 24% using Ho(3+), Pr(3+)-doped fluoride fiber. Using Ho(3+)-doped silica fiber, a maximum output power of 55 mW at 2.1 microm was generated at a slope efficiency of 27%, a value limited by the presence of pump excited state absorption.

Diode-pumped mode-locked Yb:YCOB laser generating 35 fs pulses

Direct sub-50-fs pulse generation is demonstrated with a mode-locked Yb:YCa4O(BO3)3 laser. With external compression, pulses as short as 35 fs are generated at 1055 nm. The oscillator operating at a repetition rate of 95 MHz is pumped by a two-section distributed Bragg reflector tapered diode laser and mode locked by a semiconductor saturable absorber mirror. The onset of self-Raman-conversion for pulse spectral bandwidths exceeding 40 nm (FWHM) is observed.

Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier

A high-power narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The external cavity laser system uses a new tapered amplifier with a super-large optical-cavity (SLOC) design that leads to improved performance of the external cavity diode lasers. The laser system is tunable over a 29 nm range centered at 802 nm. As high as 1.95 W output power is obtained at 803.84 nm, and an output power above 1.5 W is achieved from 793 to 812 nm at operating current of 3.0 A. The emission linewidth is below 0.004 nm and the beam quality factor M2 is below 1.3 over the 29 nm tunable range. As an example of application, the laser system is used as a pump source for the generation of 405 nm blue light by single-pass frequency doubling in a periodically poled KTiOPO4. An output power of 24 mW at 405 nm, corresponding to a conversion efficiency of 0.83%/W is attained.

Passively mode-locked Yb:KLu(WO4)2 oscillators.

We demonstrate passive mode locking based on the novel monoclinic double tungstate crystal Yb:KLu(WO4)2. We report the shortest pulses ever produced with an Yb-doped tungstate laser using a semiconductor saturable absorber. A pulse duration of 81 fs has been achieved for an average power of 70 mW at 1046 nm. We compare the performance of the polarization oriented parallel to the Nm- and Np-crystallo-optic axes. Results in the femtosecond and picosecond regime are presented applying either Ti:sapphire or diode laser pumping. The great potential of Yb:KLu(WO4)2 as an active medium for ultrashort pulses is demonstrated for the first time, to our knowledge.

Highly efficient mode-locked Yb:Sc2O3 laser

Passive mode locking of the Yb:Sc2O3 laser is demonstrated. We investigate the laser performance with Ti:sapphire and diode-laser pumping. The laser is mode locked by use of a semiconductor saturable-absorber mirror and emits as much as 0.8 W of power in the picosecond range with a pump efficiency as high as 47%. With dispersion compensation, pulses as short as 230 fs for an average power of 0.54 W are obtained at 1044 nm. This is, to our knowledge, the first femtosecond oscillator based on an Yb-doped sesquioxide crystal.

12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells

Highly strained InGaAs quantum wells were grown by metalorganic vapor-phase epitaxy. By lowering the growth temperature to 530 °C, a maximum photoluminescence wavelength of 1192 nm was achieved. High-power diode lasers with a maximum lasing wavelength of 1175 nm were fabricated. A continuous-wave output power of 12 W at a heat-sink temperature of 25 °C was obtained at a lasing wavelength of 1120 nm.

600 mW optical output power at 488 nm by use of a high-power hybrid laser diode system and a periodically poled MgO:LiNbO3 bulk crystal

600 mW second-harmonic blue light at 488 nm has been generated by use of a master-oscillator power amplifier diode laser system as a pump source with a maximum optical output power of 4 W in continuous-wave operation. For frequency doubling, a periodically poled MgO:LiNbO3 bulk crystal was used in a single-pass configuration. A conversion efficiency of 15% and an overall wall-plug efficiency of 4% were achieved.

High-Power Monolithic Two-Mode DFB Laser Diodes for the Generation of THz Radiation

We have devolved 1064 nm high-power monolithic distributed feedback lasers which operate simultaneously on two longitudinal modes. These modes correspond to the fundamental and first-order lateral mode and arise from a 7.5 mum width ridge waveguide supporting both of them. They are further stabilized by a first-order grating built into an InGaP/GaAs/InGaP multilayer structure. The threshold current of the laser is 66 mA, the slope efficiency is 0.5 W/A, and an output power of ~500 mW is reached. Detailed investigations of the intensity distribution of lateral and vertical far fields and the spectral behavior are shown. The longitudinal mode spacing at 260 mW is 0.56 nm corresponding to approximately 150 GHz. THz generation is demonstrated by mixing the two-line laser emission in a LT-GaAsSb photomixer.