G. Faini

Spin-polarized current induced switching in Co/Cu/Co pillars

We present experiments of magnetization reversal by spin injection performed on pillar-shaped Co/Cu/Co trilayers. The pillars (200×600 nm2) are fabricated by electron beam lithography and reactive ion etching. Our data for the magnetization reversal at a threshold current confirm previous results on similar pillars. In addition, we present another type of experiment that also clearly evidences the control of the magnetic configuration by the current intensity. Our interpretation is based on a version of the Slonczewski model in which the polarization of the current is calculated in the Valet–Fert model of the giant magnetoresistance with current applied perpendicular to plane.

Switching a spin valve back and forth by current-induced domain wall motion

We have studied the current-induced displacement of a domain wall (DW) in the permalloy (Py) layer of a Co/Cu/Py spin valve structure at zero and very small applied field. The displacement is in opposite direction for opposite dc currents, and the current density required to move DW is only of the order of 106 A/cm2. For H=3 Oe, a back and forth DW motion between two stable positions is observed. We also discuss the effect of an applied field on the DW motion.

Direct Observation of Domain-Wall Configurations Transformed by Spin Currents

Direct observations of current-induced domain-wall propagation by spin-polarized scanning electron microscopy are reported. Current pulses move head-to-head as well as tail-to-tail walls in submicrometer Fe20Ni80 wires in the direction of the electron flow, and a decay of the wall velocity with the number of injected current pulses is observed. High-resolution images of the domain walls reveal that the wall spin structure is transformed from a vortex to a transverse configuration with subsequent pulse injections. The change in spin structure is directly correlated with the decay of the velocity.

Domain wall motion induced by spin polarized currents in ferromagnetic ring structures

We present an experimental study of the influence of spin-polarized currents on the displacement of domain walls in submicrometer permalloy ring structures. Using magnetoresistance (MR) measurements with multiple nonmagnetic contacts, we can sense the displacement of a domain wall and, by injecting large dc current densities (1011 A/m2), we can increase or decrease the magnetic field needed to move a single domain wall, depending on the direction of the current with respect to the applied field direction. Using rings with and without notches and by measuring the MR with the magnetic field applied along different directions, we show that we can exclude the possibility that the dominating effect is a classical Oersted field. We conclude that our observations can be explained by a directional spin torque effect.

Shaped angular dependence of the spin-transfer torque and microwave generation without magnetic field

The generation of oscillations in the microwave frequency range is one of the most important applications expected from spintronics devices exploiting the spin-transfer phenomenon, which is the reorientation of the magnetization of a ferromagnetic domain by spin-polarized current. Here we report transport and microwave power measurements on specially designed nanopillars, for which a non-standard angular dependence of the spin-transfer torque is predicted by theoretical models. We observe a new kind of current-induced dynamics that is characterized by large angle precessions in the absence of any applied field. This is also predicted by simulations including a ‘wavy’ angular dependence of the torque. This type of nanopillar, which is able to generate microwave oscillations in zero applied magnetic field, could represent an interesting method for the implementation of spin-transfer oscillators. We also emphasize the theoretical implications of our results on the angular dependence of the torque.

Coupling Efficiency for Phase Locking of a Spin Transfer Nano-Oscillator to a Microwave Current

The phase locking behavior of spin transfer nano-oscillators (STNOs) to an external microwave signal is experimentally studied as a function of the STNO intrinsic parameters. We extract the coupling strength from our data using the derived phase dynamics of a forced STNO. The predicted trends on the coupling strength for phase locking as a function of intrinsic features of the oscillators, i.e., power, linewidth, agility in current, are central to optimize the emitted power in arrays of mutually coupled STNOs.

Controlled magnetic switching in single narrow rings probed by magnetoresistance measurements

We present anisotropic magnetoresistance measurements of magnetic switching processes in narrow ferromagnetic permalloy rings fabricated with six nonmagnetic electrical contacts. We demonstrate that measuring the resistance between different contacts allows the determination of the domain wall positions. Furthermore, these measurements also yield the possibility of determining the local switching fields of different parts of the ring. This provides a very useful tool to explore the complete switching process of a single ring. We show that, by using notches of suitable size and by applying fields along appropriate directions, it is possible to select the circulation direction of the vortex state using a uniform field only.

Direct observation of domain-wall pinning at nanoscale constrictions

In a combined experimental and numerical study, we determine the details of the pinning of domain walls at constrictions in permalloy nanostructures. Using high spatial-resolution (<10nm) electron holography, we image the spin structure of geometrically confined head-to-head domain walls at constrictions. Low-temperature magnetoresistance measurements are used to systematically ascertain the domain-wall depinning fields in constrictions down to 35 nm width. The depinning fields increase from 60 to 335 Oe with decreasing constriction width and depend on the wall spin structure. The energy barrier to depin the wall from the constriction is quantitatively determined and comparison with the depinning field strength allows us to gauge the energy barrier height of the pinning potential.

Switching the magnetic configuration of a spin valve by current-induced domain wall motion

We present experimental results on the displacement of a domain wall by injection of a dc current through the wall. The samples are 1-μm-wide long stripes of a CoO/Co/Cu/NiFe classical spin-valve structure. The stripes have been patterned by electron-beam lithography. A neck has been defined at 1/3 of the total length of the stripe and is pinning center for the domain walls, as shown by the steps of the giant magnetoresistance curves at intermediate levels (1/3 or 2/3) between the resistances corresponding to the parallel and antiparallel configurations. We show by electric transport measurements that, once a wall is trapped, it can be moved by injecting a dc current higher than a threshold current of the order of magnitude of 107 A/cm2. We discuss the different possible origins of this effect, i.e., local magnetic field created by the current and/or spin transfer from spin-polarized current.

Domain wall displacement induced by subnanosecond pulsed current

We show that a single current pulse as short as 0.4 ns can trigger domain wall (DW) displacement in spin-valve stripes of 0.3 μm width inserted into a coplanar waveguide. The experiments were carried out with varying current pulse amplitude, duration, polarity, and applied static magnetic field. In zero field, DW displacement occurs in the same direction as the conduction electron current. In finite applied field, the direction of DW displacement is that favored by the field orientation. In both cases, the DW displacement occurs only above a critical current density jc of the order of 106 A/cm2. The distance traveled by the DW along the stripe increases with the current pulse amplitude and applied field strength, but it does not depend on the pulse duration between 0.4 and 2 ns.