G. García-Salgado

Optical and structural properties of Silicon nanocrystals embedded in SiO x matrix obtained by HWCVD

The interest in developing optoelectronic devices integrated in the same silicon chip hasmotivated the study of Silicon nanocrystals (Si-ncs) embedded in SiOx (nonstoichiometric silicon oxides) films. In this work, Si-ncs in SiOx films were obtained by Hot Wire Chemical Vapor Deposition (HWCVD) at 800, 900, and 1000°C. The vibration modes of SiOx films were determined by FTIR measurements. Additionally, FTIR and EDAX were related to get the proper composition of the films. Micro-Raman studies in the microstructure of SiOx films reveal a transition fromamorphous-to-nanocrystalline phase when the growth temperature increases; thus, Si-ncs are detected. Photoluminescence (PL) measurement shows a broad emission from 400 to 1100 nm. This emission was related with both Si-ncs and interfacial defects present in SiOx films. The existence of Si-ncs between 3 and 6 nm was confirmed by HRTEM.

Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD

In this work, non-stoichiometric silicon oxide (SiOx) films and (SiOx/SiOy) junctions, as-grown and after further annealing, are characterized by different techniques. The SiOx films and (SiOx/SiOy) junctions are obtained by hot filament chemical vapor deposition technique in the range of temperatures from 900°C to 1,150°C. Transmittance spectra of the SiOx films showed a wavelength shift of the absorption edge thus indicating an increase in the optical energy band gap, when the growth temperature decreases; a similar behavior is observed in the (SiOx/SiOy) structures, which in turn indicates a decrease in the Si excess, as Fourier transform infrared spectroscopy (FTIR) reveals, so that, the film and junction composition changes with the growth temperature. The analysis of the photoluminescence (PL) results using the quantum confinement model suggests the presence of silicon nanocrystal (Si-nc) embedded in a SiOx matrix. For the case of the as-grown SiOx films, the absorption and emission properties are correlated with quantum effects in Si-nc and defects. For the case of the as-grown (SiOx/SiOy) junctions, only the emission mechanism related to some kinds of defects was considered, but silicon nanocrystal embedded in a SiOx matrix is present. After thermal annealing, a phase separation into Si and SiO2 occurs, as the FTIR spectra illustrates, which has repercussions in the absorption and emission properties of the films and junctions, as shown by the change in the A and B band positions on the PL spectra. These results lead to good possibilities for proposed novel applications in optoelectronic devices.PACS61.05.-a; 68.37.Og; 61.05.cp; 78.55.-m; 68.37.Ps; 81.15.Gh

PL Properties of SiOx Obtained by HFCVD Technique

In this work, SiOx films were deposited on crystalline silicon substrates and their microstructure and photoluminescent properties are reported. The films were deposited by the Hot Filament Chemical Vapor Deposition (HFCVD) technique using molecular hydrogen (H2) and silica glass (SiO2) as reactants. The H2 becomes atomic hydrogen when is flowed through a tungsten wire heated at 2000 °C. According to the chemical reaction, the atomic hydrogen reacts with the solid source (SiO2) and a SiOx film on a substrate is obtained. From FTIR and room temperature photoluminescence measurements can be concluded that, regions with different average size of silicon nano-clusters in the oxide are formed and they probably are the responsible for the light emission in the visible range.

Si Nanocrystals Deposited by HFCVD

The structural and optical properties of Si nanocrystal (Si-nc) embedded in a matrix of off-stoichiometric silicon oxide (SiOx, x<2) films prepared by hot filament chemical vapor deposition technique were studied. The films emit a wide photoluminescent spectra and the maximum peak emission shows a blue-shift as the substrate temperature (Ts) decreases. Also, a wavelength-shift of the absorption edge in transmittance spectra is observed, indicating an increase in the energy band gap. The Si-nc’s size decreased from 6.5 to 2.5 nm as Ts was reduced from 1150 to 900 °C, as measured through High Resolution Transmission Electron Microscopy analysis. A combination of mechanisms is proposed to explain the photoluminescence in the SiOx films, which involve SiOx defects and quantum confinement effects.

Synthesis of ZnO Particles by Electrolysis

ZnO with a good crystallinity and visible photoluminescence at room temperature around 518 nm and 605 nm obtained by an electrolytic method using urea and zinc nitrate is presented. An electrolytic Teflon cell was used for the process using tungsten wire and aluminum foil as electrodes, the tungsten wire was introduced in a solution of water, zinc nitrate and urea. The electrical potential was modified, keeping constant the growth time. As substrate and cathode a 1-3 -cm, (100), n type, silicon wafer was used. The crystalline structure and photoluminescence showed interesting changes when the electrical potential was modified. XRD (X Ray Diffraction) performed on the films showed characteristic diffraction peaks of ZnO obtained in other works. The amplitude of these peaks changed with the electrical potential applied, with a predominance of the (100), (002) and (101) planes. The photoluminescence (PL) bands changed with the electrical conditions too. At low electrical currents a predominance of the green band (520 nm) was observed, and another band around 600 nm appeared from high current conditions, this behavior can be associated with different defects generated during the grow process. From these results we conclude that the change in the electrical current produces changes in the structural and optical characteristics of the material.

Photoconduction in silicon rich oxide films

Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH4 (silane) and N2O (nitrous oxide) as reactive gases at 700 °. The gas flow ratio, Ro = [N2O]/[SiH4] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to Ro = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies (~3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.