G. Garreau

High Spin Polarization at Ferromagnetic Metal–Organic Interfaces: A Generic Property

A high spin polarization of states around the Fermi level, EF, at room temperature has been measured in the past at the interface between a few molecular candidates and the ferromagnetic metal Co. Is this promising property for spintronics limited to these candidates? Previous reports suggested that certain conditions, such as strong ferromagnetism, i.e., a fully occupied spin-up d band of the ferromagnet, or the presence of π bonds on the molecule, i.e., molecular conjugation, needed to be met. What rules govern the presence of this property? We have performed spin-resolved photoemission spectroscopy measurements on a variety of such interfaces. We find that this property is robust against changes to the molecule and ferromagnetic metals electronic properties, including the aforementioned conditions. This affirms the generality of highly spin-polarized states at the interface between a ferromagnetic metal and a molecule and augurs bright prospects toward integrating these interfaces within organic spintronic devices.

Room-temperature ferromagnetism in single crystal Fe1.7Ge thin films of high thermal stability grown on Ge(111)

We report on the epitaxial growth of ultrathin ferromagnetic Fe1.7Ge layers on Ge(111) wafer. These single crystal intermetallic layers adopt the InNi2 (B82) crystallographic structure. They are ferromagnetic with a Curie temperature well above room temperature. The interface between the ferromagnet layer and the Ge wafer is of high perfection. Interestingly, the annealing of the sample up to 300°C alters neither the crystallographic structure, nor the interface quality, nor the magnetic properties but leads to a nearly perfect smoothening of the germanide layer surface. This high thermal robustness should open the way for the growth of fully epitaxial iron germanide/Ge hybrid structures.

Epitaxial Fe-Ge thin films on Ge(111): Morphology, structure, and magnetic properties versus stoichiometry

We have studied the growth and magnetic properties of thin Fe-Ge films synthesized (codeposited at room temperature and postannealed at

c(4 × 8) periodicity in ultrathin iron silicides on Si(1 1 1)

250\text{ }\ifmmode^\circ\else\textdegree\fi{}\text{C}

Simple and advanced ferromagnet/molecule spinterfaces

) on Ge(111) wafers versus stoichiometry. Morphology and crystal structure have been investigated in situ by means of scanning tunneling microscopy, low-energy electron diffraction, and x-ray photoelectron diffraction and ex situ with x-ray diffraction. The magnetic properties were characterized ex situ by conventional polar and longitudinal magneto-optical Kerr effect and transverse biased initial inverse susceptibility and torque measurements. It is found that the growth is epitaxial for Ge content up to

Electronic and spectroscopic properties of early 3d metal atoms on a graphite surface

\ensuremath{\sim}48\text{ }\text{at}\text{.}\text{ }\mathrm{%}

Magnetic properties of transition metal atoms adsorbed on graphite

(

Growth and magnetic anisotropy of Fe films deposited on Si(111) using an ultrathin iron silicide template

\ensuremath{\sim}{\text{Fe}}_{1.1}\text{Ge}

Atomic structure of carbon-induced Si (001) c (4x4) reconstruction as a Si-Si homodimer and C-Si heterodimer network

composition). In particular, the film is homogeneous and flat and adopts a crystalline structure of hexagonal symmetry derived from the

Accurate measurement of the in-plane magnetic anisotropy energy function Ea(θ) in ultrathin films by magneto-optics

\text{B}{8}_{2}