G.H. Massiha

A hands-on laboratory based approach to undergraduate robotics education

The paper describes the teaching experience gathered along four years, including the choices of robotics platform, simulator, typical experiments and projects we have conducted for students. We also discuss our efforts and plans to develop a hands-on laboratory course for the education in Robotics and Automation. The course is designed to the multidisciplinary and can be offered for engineering and non-engineering students. In order to offer hands-on experience in operating the robots and design of manufacturing works cells, a fully-equipped robotics laboratory has been established to provide basic as well as advanced experiments, to address the needs of students at different education levels.

Efficient encoding scheme for ultra-fast flash ADC

We propose an efficient encoding scheme to be designed using the robust principle of programmable logic arrays (PLA) for an ultra-fast flash analog to digital converter (ADC). High-speed operation in the MHz-GHz range is the major goal of flash ADC design. A high-speed ADC needs a fast comparator, a high-speed encoder, and a fast sample and hold (S-H) circuit. These three areas of high-speed ADC design require equally careful attention. Technological advancement has produced superior high-speed comparators. The speed of encoders has been dealt with mostly on the algorithmic part. We propose a CMOS based encoder design to be integrated with a CMOS based high-speed comparator for system-on-chip (SoC). Depending on the availability of high-speed comparators, our design exploits the design of the comparator for the benefit of speeding up the encoder.

Initiating a program in nanotechnology through a structured curriculum

The field of nanotechnology is currently undergoing an exciting period of discoveries. Focusing on the intersection of areas such as physics, biology, engineering, chemistry, computer science and more, nonotechnology, is rapidly expanding. Many researchers in academia and industries have expressed need for an academic program where students from diverse fields of sciences and engineering (molecular computing, quantum physics, chemistry, mechanical, electrical, computer etc.) can come together to learn and discuss the latest advances, with the overall objective of encouraging further development. This will need preparing engineering students with an ability to apply knowledge of science, mathematics, and engineering to develop nanodevices and nanosystems. The challenge is to provide an interdisciplinary education to students through a well-structured curriculum covering broad aspects of basic sciences and engineering.

New nano-electronic memory using multi-level logic principle

In this paper a novel digital, logic level design principle, suitable for nano-electronic circuits, is proposed. The proposed design has the potential to increase storage capacity of memory by two fold without increase in the number of bits needed. Current-Voltage (I-V) characteristic of benzene ring molecule provides the scope of applying tri-stable logic principle using benzene ring molecule as special switching device. This principle will offer the option to store negative numbers in memory or registers without need of special sign bit and without need of a special coding scheme. These memory cells also can be used in the elementary binary digital logic blocks like AND, OR, etc. and elementary computational blocks like ADD and SUBTRACT units using benzene molecules as basic tri-stable switching device and resistors in combination. It is expected that higher magnitude of current will be observed in the larger molecules for same voltage swing without major change in the qualitative behavior and hence the basic design scheme will produce better devices as larger molecules with similar characteristics are synthesized.

Reliability test of interconnections using electrical noise measurement

The excess electrical noise in aluminum and aluminum alloy thin films were measured. The magnitude and frequency exponent for noise spectra of 1/f/sup alpha / were measured as a function of the sample temperature and current density. Two different regions in plots of normalized 1/f/sup alpha / noise magnitude, with alpha between 1.2 and 2.2. versus inverse temperature were observed. The time dependence experiment on excess noise of aluminum showed 1/f/sup alpha /, with alpha larger than 2.2, noise spectra during later stages of the electromigration process.<<ETX>>

System Advisor Model (SAM) simulation modelling of a concentrating solar thermal power plant with comparison to actual performance data

Abstract This paper is focused on the modelling and simulation of a 50 kW concentrated solar power (CSP) plant located in Crowley, Louisiana. The model was developed using system advisor model (SAM). The objective is to develop a predictive model (using SAM) to characterize the performance of the power plant and, thus, aid the analysis and evaluation of the plant’s performance. The power plant is a research facility of the Solar Thermal Applied Research and Testing (START) Lab. The model was validated by comparing its predictions with the actual plant data. The comparison showed a good correlation between the predicted results and the actual plant data. The validated model was then used to perform parametric analyses across different locations. The analyses showed that by operating the power plant at the optimal combination of solar multiple and hours of storage, we can achieve about 70% reduction in the cost of electrical energy.

Studying the dependence of low-frequency noise on geometrical shape of al-based thin film interconnects

In this paper the experimental results of a study conducted to investigate dependence of low-frequency noise on the geometrical shape of VLSI interconnect are discussed. The metal thin films are most commonly used in fabrication of these metallic interconnects. The interconnection lines of modern ICs have effective cross sections in the range of 1-5 square μm. Therefore, the operating currents of a few milliamps results in current densities in the range of MA/square cm. Under these conditions, the phenomenon of electromigration arises, which may lead to the failure of the interconnection lines in a time ranging from a few several hours to several years, depending on the subjected current density J and thermal stress T. To study the effect of subjected current densities and temperatures, low-frequency noise measurements were performed on a group of ten metal thin film VLSI interconnects. These measurements were carried out under stressing current densities between 1.0x105 A/cm2 and 2.2 x106 A/cm2 at different heating temperatures up to 280 ° C. We used a sophisticated noise measurement system based on dual-channel dynamic signal analyzer and ultra low-noise amplifier to monitor and capture the noise spectra exhibited by the samples when subjected to electrical and thermal stress. The low-frequency noise measurement system and measurement technique, metal thin film sample design, and the behavior of these samples under subjected stressing conditions are discussed in the paper.

I-V fluctuation of benzene molecule as P-type or N-type active element

In this paper the energy of an electron excited in conduction state in benzene (C6H6) molecule is estimated. The possible energy of the excited electron depends on the eigen energy state of the excited electron. Estimation of energy of an electron excited in conduction in C6H6 molecule is necessary to analyze fluctuation in currents in benzene molecule. Stable current-voltage (I-V) behavior of benzene molecule ensures functionality of any nano device involving benzene molecule or its derivative. This theoretical work can be verified by experiment of radiation from an excited benzene molecule. The result will give precise idea about the energy needed to destabilize the electrical behavior of devices made of benzene molecules. Benzene molecule is interseting for its potential in molecular nano electronics. The hexagonal core plane of the benzene molecule is relatively unalterable compared to the π localized electrons. Disturbance in the π-electron cloud will cause creation of hole by exciting a π electron to jump for conduction or may push an excited electron in the π electron cloud. The analysis of these effects rely on estimates of the energy imbalance due to presence of excited charged particles. This work is a beginning step in this front. The knowledge can be used to engineer improved switching mechanism using benzene molecule as an electronic device.

Characterization of excess electrical noise in Al-thin films

Excess electrical noise measurement was used to study the electromigration damage in thin aluminum thin films. Magnitude and frequency exponent for excess electrical noise spectra of 1/f/sup /spl alpha// were measured as a function of the Al-thin film temperature. In this study very seldom excess noise with frequency exponent, /spl alpha/, exactly equal to 1.0 or 2.0 was encountered. The value of /spl alpha/ constantly changed from 0.6 to 2.8. This scattering of the /spl alpha/-value meant that different percentages of various noises did exist in almost every noise spectrum. Computer analysis was used to find the portion of each type of noise present at various frequencies. This analyses showed that the excess noise magnitude is overwhelmingly larger than the thermal noise component when /spl alpha//spl ges/0.8. The excess noise spectra with /spl alpha/>1.2 should be considered 1/f/sup 2/ excess noise and different models have to be considered for their study.