G. K. Shivakumar

Analysis of various growth procedures for the deposition of Bi2S3 semiconducting films

Abstract Thin films of Bi2S3 were grown by various physical deposition techniques such as conventional vacuum evaporation of the compound, flash evaporation and the hot-wall technique. Deposits of the compound were also obtained by solid state reaction, vapour phase reaction and solid-vapour interaction. Detailed studies on the stoichiometry, crystallinity and homogeneity of these deposits were made as a function of the deposition parameters and the post-deposition treatment. A critical evaluation of the different growth procedures in obtaining the compound semiconductor thin films is given on the basis of the experimental results.

Growth and characterization of indium telluride thin films

Abstract Thin films of indium telluride prepared by conventional vacuum evaporation techniques are often non-stoichiometric because of fractionation. Hence, in an attempt to obtain stoichiometric films, non-stoichiometric bulk was used. It is observed that a bulk with a composition In:Te = 55.7:44.3 (atomic per cent) yields stoichiometric films. The effect of deposition temperature and annealing at elevated temperatures has been studied in detail. The results indicate that an increase in the deposition temperature results in the re-evaporation of tellurium from the films whereas indium-deficient films are obtained on annealing at elevated temperatures.

Nucleation, growth and orientation of bismuth films

Abstract The nucleation, growth and orientation of bismuth films vapour-deposited onto pure and bismuth-doped sodium chloride cleavages have been studied. The saturation nucleation density of bismuth on both pure and doped cleavages was found to be of the same order, i.e about 3.8 × 10 11 cm −2 at 180 °C. It was observed that films deposited onto pure sodium chloride cleavages exhibit a (001) orientation whereas those deposited onto bismuth-doped cleavages exhibit a (012) orientation at a substrate temperature of 180 °C.

Electrical contacts to semiconducting indium telluride films

Etude des films en tellure dindium dans le but dune application aux dispositifs photovoltaiques et photoconducteurs. On etudie plus particulierement leffet de la temperature sur les caracteristiques courant tension

Electron transport mechanism in Al/Al2O3/n‐InTe/Bi thin‐film structures

Thin‐film metal‐insulator‐semiconductor structures have been prepared by deposition of n‐type indium telluride films on partially oxidized aluminum layers. An analysis of the current‐voltage characteristics indicates the current transfer mechanism in these structures to be of the Schottky thermionic emission type in low field and space‐charge limited at high fields. The barrier height presented to the conduction electrons in such structures has also been calculated from the temperature dependence of the I‐V characteristics.