G. Lashkarev

Electron field emission from ZnO self-organized nanostructures and doped ZnO: Ga nanostructured films

Self-organized ZnO nanostructures were grown by thermal decomposition of metalorganic precursors as well as by carbothermal reduction process. Nanostructured undoped and gallium-doped ZnO nanostructured films were deposited by plasma-enhanced chemical vapor deposition from metalorganic compounds. Electron field emission follows Fowler-Nordheim equation. Efficient electron emission was obtained from self-organized nanostructures due to their geometric shape. Enhanced field emission from ZnO:Ga nanostructured films in comparison with undoped ZnO films is obliged to lowering work function at doping by gallium.

ДЕТЕКТОР УЛЬТРАФІОЛЕТОВОГО ВИПРОМІНЮВАННЯ НА ОСНОВІ ZnO, ЛЕГОВАНОГО АЗОТОМ

ZnO films, doped by nitrogen, deposited on p-Si (100) substrates by magnetron sputtering in nitrogen plasma were studied. The developes surface-barrier Ni/ZnO:N/Al diodes demonstrated the maximal photosensitivity about 0.1 A/W at 365 nm (at bias -1 V) and the time constant of photoresponse is about 100 ns. The methods for improvement of the properties of UV radiation detectors, based on investigated ZnO:N films, were proposed.