G. M. Gusev

Microwave Zero-Resistance States in a Bilayer Electron System

Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power, and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS.

Nonlocal transport near charge neutrality point in a two-dimensional electron-hole system.

Nonlocal resistance is studied in a two-dimensional system with a simultaneous presence of electrons and holes in a 20 nm HgTe quantum well. A large nonlocal electric response is found near the charge neutrality point in the presence of a perpendicular magnetic field. We attribute the observed nonlocality to the edge state transport via counterpropagating chiral modes similar to the quantum spin Hall effect at a zero magnetic field and graphene near a Landau filling factor ν=0.

Resonance oscillations of magnetoresistance in double quantum wells

We present the experimental and theoretical studies of the magnetoresistance oscillations induced by the resonance transitions of electrons between the tunnel-coupled states in double quantum wells. The suppression of these oscillations with increasing temperature is irrelevant to the thermal broadening of the Fermi distribution and reflects the temperature dependence of the quantum lifetime of electrons. The gate control of the period and amplitude of the oscillations is demonstrated.

Negative differential magnetoresistance and commensurability oscillations of two-dimensional electrons in a disordered array of antidots

Negative linear magnetoresistance of two-dimensional (2D) electrons have been found in a disordered array of antidots. The authors suggest that trajectories that roll along the array of antidots exist in a magnetic field. These trajectories have a mean free path larger than the average value for electrons with ordinary diffusion.

Weak antilocalization in HgTe quantum wells near a topological transition

The anomalous alternating magnetoresistivity in HgTe quantum wells with thicknesses of 5.8 and 8.3 nm, i.e., near the transition from the direct band spectrum to an inverted spectrum, has been revealed and analyzed. It has been shown that the revealed anomalous alternating magnetoresistivity in wells with an inverted spectrum is well described by the theory developed by S.V. Iordanskii et al. [JETP Lett. 60, 206 (1994)] and W. Knap et al. [Phys. Rev. B 53, 3912 (1996)]. A detailed comparison of the experimental data with the theory indicates the presence of only the cubic term in the spin splitting of the electronic spectrum. The applicability conditions of the mentioned theory are not satisfied in a well with a direct gap and, for this reason, such a certain conclusion is impossible. The results indicate the existence of a strong spin-orbit interaction in symmetric HgTe quantum wells near the topological transition.

Linear magnetoresistance in HgTe quantum wells

We report magnetotransport measurements in a HgTe quantum well with an inverted band structure, which is expected to be a two-dimensional (2D) topological insulator. A small magnetic field perpendicular the 2D layer breaks the time reversal symmetry and thereby, suppresses the edge state transport. A linear magnetoresistance is observed in low magnetic fields, when the chemical potential moves through the the bulk gap. That magnetoresistance is well described by numerical calculations of the edge states magnetotransport in the presence of nonmagnetic disorder. With magnetic field increasing the resistance, measured both in the local and nonlocal configurations first sharply decreases and then increases again in disagreement with the existing theories.

Nonlinear transport phenomena in a two-subband system

We study non-linear transport phenomena in a high-mobility bilayer system with two closely spaced populated electronic subbands in a perpendicular magnetic field. For a moderate direct current excitation, we observe zero-differential-resistance states with a characteristic 1/B periodicity. We investigate, both experimentally and theoretically, the Hall field-induced resistance oscillations which modulate the high-frequency magneto-intersubband oscillations in our system if we increase the current. We also observe and describe the influence of direct current on the magnetoresistance in the presence of microwave irradiation.

Crossover between distinct mechanisms of microwave photoresistance in bilayer systems

We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of

High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates

{T}^{\ensuremath{\ast}}\ensuremath{\simeq}4\text{ }\text{K}

Transition from insulating to metallic phase induced by in-plane magnetic field in HgTe quantum wells

. With increasing temperature, a strong deviation of the oscillation amplitudes from the behavior predicted by this mechanism is observed, presumably indicating a crossover to another mechanism of microwave photoresistance, with similar frequency dependence. Our analysis shows that this deviation cannot be fully understood in terms of contribution from the mechanisms discussed in theory.